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GE-600 series

Known as: 600 series, GE-645, GE 635 
The GE-600 series was a family of 36-bit mainframe computers originating in the 1960s, built by General Electric (GE). When GE left the mainframe… Expand
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Papers overview

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Highly Cited
2012
Highly Cited
2012
An ultrathin equivalent oxide thickness (EOT) Al<sub>2</sub>O<sub>3</sub>/ GeO<sub>x</sub>/Ge gate stack with a superior GeO<sub… Expand
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Highly Cited
2007
Highly Cited
2007
An atomistic Green 's function method is developed to simulate phonon transport across a strained germanium (or silicon) thin… Expand
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Highly Cited
2002
Highly Cited
2002
Heterojunction and superlattice formation is essential for many potential applications of semiconductor nanowires in nanoscale… Expand
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Highly Cited
2002
Highly Cited
2002
We report Ge p-channel MOSFETs with a thin gate stack of Ge oxynitride and LTO on bulk Ge substrate without a Si cap layer… Expand
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Highly Cited
2001
Highly Cited
2001
We have fabricated strained Ge channel p-type metal–oxide–semiconductor field-effect transistors (p-MOSFETs) on Si0.3Ge0.7… Expand
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Highly Cited
2000
Highly Cited
2000
Germanium nanowires are synthesized in bulk quantities and high purity using a simple vapor transport process. X-ray diffraction… Expand
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Highly Cited
1999
Highly Cited
1999
Abstract From high pressure transport measurements we compare the normal and superconducting properties of CeCu 2 Ge 2 and CeCu 2… Expand
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Highly Cited
1999
Highly Cited
1999
Abstract. We give an algorithmic description of the action of the Chern classes of tautological bundles on the cohomology of… Expand
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Highly Cited
1998
Highly Cited
1998
Transport properties of polycrystalline Ge clathrates with general composition Sr8Ga16Ge30 are reported in the temperature range… Expand
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Highly Cited
1997
Highly Cited
1997
We describe a family of caching protocols for distrib-uted networks that can be used to decrease or eliminate the occurrence of… Expand
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