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GE-600 series

Known as: 600 series, GE-645, GE 635 
The GE-600 series was a family of 36-bit mainframe computers originating in the 1960s, built by General Electric (GE). When GE left the mainframe… 
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36-bitAccumulator (computing)BCPLBooting

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Papers overview

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2015
2015
Photosensitivity of pulsed laser deposited Ge-Sb-Se thin films
Pulsed laser deposition was used to prepare amorphous thin films from (GeSe2)100-x (Sb2Se3)x system, where x is varying from 0 to… 
Highly Cited
2013
Highly Cited
2013
High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using $\hbox{HfO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stacks Fabricated by Plasma Postoxidation
An ultrathin equivalent oxide thickness (EOT) HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/Ge gate stack has been fabricated by… 
Highly Cited
2010
Highly Cited
2010
Ge MOSFETs performance: Impact of Ge interface passivation
We have systematically investigated Ge interface passivation methods, and the highest electron (1920 cm2/Vs) and hole mobility… 
Highly Cited
2008
Highly Cited
2008
Tomographic analysis of dilute impurities in semiconductor nanostructures
Highly Cited
2007
Highly Cited
2007
P-Channel Germanium FinFET Based on Rapid Melt Growth
High-performance P-channel Ge FinFETs have been fabricated based on the rapid-melt-growth method. The fully depleted Ge FinFET… 
Highly Cited
2006
Highly Cited
2006
Ge n-MOSFETs on lightly doped substrates with high-/spl kappa/ dielectric and TaN gate
In this letter, we report successful fabrication of germanium n-MOSFETs on lightly doped Ge substrates with a thin HfO/sub 2… 
Highly Cited
2002
Highly Cited
2002
High mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric
We report Ge p-channel MOSFETs with a thin gate stack of Ge oxynitride and LTO on bulk Ge substrate without a Si cap layer… 
Highly Cited
2000
Highly Cited
2000
Germanium Nanowire Growth via Simple Vapor Transport
Germanium nanowires are synthesized in bulk quantities and high purity using a simple vapor transport process. X-ray diffraction… 
Highly Cited
2000
Highly Cited
2000
Regimented placement of self-assembled Ge dots on selectively grown Si mesas
The control of positioning of self-assembled dots is critical for the fabrication of regimented arrays in signal processing… 
Highly Cited
1993
Highly Cited
1993
Laser-trimmed four-port bandpass filter fabricated in single-mode photosensitive Ge-doped planar waveguide
A single-mode photosensitive waveguide Mach-Zehnder interferometer fabricated in Ge-doped planar silica is reported. Two… 
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