Skip to search formSkip to main contentSkip to account menu

Etch pit density

Known as: EPD 
The etch pit density (EPD) is a measure for the quality of semiconductor wafers. An etch solution is applied on the surface of the wafer where the… 
Wikipedia (opens in a new tab)

Related topics

Related topics

5 relations
Etching (microfabrication)SemiconductorSemiconductor detectorSemiconductor device fabrication

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2017
2017
On the solution of n-dimensional regular Cauchy problem of Euler-Poisson-Darboux equation (EPD)
A general exact solution to the n-dimensional regular Cauchy problem of Euler-Poisson-Darboux (EPD) equation has been studied… 
2015
2015
Process variation challenges and resolution in the negative-tone develop double patterning for 20nm and below technology node
Immersion based 20nm technology node and below becoming very challenging to chip designers, process and integration due to… 
2014
2014
Effect of the purity of starting materials on the growth and properties of potassium dihydrogen phosphate single crystals – A comparative study
2012
2012
Bevel RIE application to reduce defectivity in copper BEOL processing
Bevel etch used during wafer fabrication for semiconductor devices is discussed. In this case, the bevel etch process was… 
2006
2006
Correlation between Dislocation Etch Pits and Refractive Index Inhomogeneity in BBO Crystal
The relationship between dislocation etch pits and refractive index inhomogeneity in BBO crystal is reported in this paper.We… 
2000
2000
High crystalline quality ZnBeSe grown by molecular beam epitaxy with Be}Zn co-irradiation
1999
1999
Etch Pit Studies of II-VI-Wide Bandgap Semiconductor Materials ZnSe, ZnCdSe, and ZnCdMgSe Grown on InP
Abstract : Etch pit density (EPD) determination studies have been conducted on II-VI semiconductor materials ZnSe, ZnCdSe, and… 
1996
1996
EVOLUTIONARY LINEARISATION IN THE FREQUENCY DOMAIN
Feu solutions have been found so far to frequency domain MIMO system linearisation problems owing to practical difficulties in… 
1994
1994
A NITRIDED-OXIDE DIELECTRIC FOR EPITAXIAL LATERAL OVERGROWTH APPLICATIONS
...................................................................................... xi CHAPTER 
1986
1986
Direct and fast comparison of near-infrared absorption and photoluminescence topography of semiinsulating GaAs wafers
Two-dimensional mapping of band-edge photoluminescence and infrared absorption has been carried out at room temperature on 50 mm… 
By clicking accept or continuing to use the site, you agree to the terms outlined in our Privacy Policy (opens in a new tab), Terms of Service (opens in a new tab), and Dataset License (opens in a new tab)