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Etch pit density

Known as: EPD 
The etch pit density (EPD) is a measure for the quality of semiconductor wafers. An etch solution is applied on the surface of the wafer where the… 
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Related topics

Related topics

5 relations
Etching (microfabrication)SemiconductorSemiconductor detectorSemiconductor device fabrication

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2014
2014
Effect of the purity of starting materials on the growth and properties of potassium dihydrogen phosphate single crystals – A comparative study
2013
2013
Bevel RIE Application to Reduce Defectivity in Copper BEOL Processing
Bevel etch used during wafer fabrication for semiconductor devices is discussed. In this paper, the bevel etch process was… 
2012
2012
Research on Erosion Property of Field-Distortion Gas Switch Electrode in Nanosecond Pulse
Pulsed power technology is one of the technological foundations in high and new technology research, which has extremely broad… 
2010
2010
Solution‐processed oxide semiconductors for low‐cost and high‐performance thin‐film transistors and fabrication of organic light‐emitting‐diode displays
Abstract— High‐performance solution‐processed oxide‐semiconductor (OS) thin‐film transistors (TFTs) and their application to a… 
2002
2002
Low-etch-pit-density GaN substrates by regrowth on free-standing GaN films
In this study, GaN substrates with low-density etch pits were obtained by regrowth on free-standing GaN films (two steps) by… 
2000
2000
High crystalline quality ZnBeSe grown by molecular beam epitaxy with Be}Zn co-irradiation
1999
1999
Etch Pit Studies of II-VI-Wide Bandgap Semiconductor Materials ZnSe, ZnCdSe, and ZnCdMgSe Grown on InP
Abstract : Etch pit density (EPD) determination studies have been conducted on II-VI semiconductor materials ZnSe, ZnCdSe, and… 
Highly Cited
1998
Highly Cited
1998
Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
The etch pit density of organometallic vapor phase epitaxy (OMVPE)-grown GaN on sapphire was discovered to reduce drastically by… 
1996
1996
EVOLUTIONARY LINEARISATION IN THE FREQUENCY DOMAIN
Feu solutions have been found so far to frequency domain MIMO system linearisation problems owing to practical difficulties in… 
1986
1986
Direct and fast comparison of near-infrared absorption and photoluminescence topography of semiinsulating GaAs wafers
Two-dimensional mapping of band-edge photoluminescence and infrared absorption has been carried out at room temperature on 50 mm… 
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