Electron beam-induced current

Known as: Ebic, Electron beam induced current 
Electron-beam-induced current (EBIC) is a semiconductor analysis technique performed in a scanning electron microscope (SEM) or scanning transmission… (More)
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2014
2014
A model for interpreting electron beam induced current (EBIC) measurements is presented, which applies when recombination within… (More)
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2013
2013
This paper reports the first demonstration of single contact electron beam induced current (SCEBIC) technique on multicrystalline… (More)
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2010
2010
As the device feature size smaller and circuit complexity increase rapidly, failure analysis techniques to isolate defects will… (More)
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2009
2009
The spatial distribution of the electron-hole pairs generated by the electron beam is commonly called the generation volume or… (More)
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2008
2008
We have applied EBIC technique to observe leakage sites in Hf-based highMOS structures. We found a significant difference in the… (More)
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2008
2008
2014 The dependence of the electron beam induced current (EBIC) collection efficiency ~CC on the electron beam voltage is… (More)
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2008
2008
Microscopical investigation of leakage behaviors of Hf-based high-k gate stacks was achieved by means of electron-beam-induced… (More)
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1984
1984
Electron-beam induced current (EBIC) measurements were performed on cleaved cross sections of HgCdTe heterojunction infrared… (More)
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1984
1984
A technique is described to accomplish junction temperature measurements in semiconductor devices in the scanning electron… (More)
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1980
1980
Limits on the magnitude of bandgap narrowing and Auger recombination in heavily phosphorus-diffused silicon layers ∼ 10<sup>20… (More)
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