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Diffusion capacitance

Diffusion Capacitance is the capacitance due to transport of charge carriers between two terminals of a device, for example, the diffusion of… 
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DiodeDiode modellingDynamic voltage scalingP–n diode

Papers overview

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2012
2012
Analysis of the Diffusion Capacitance's Efficiency of the Bifacial Silicon Solar Cell in Steady State Operating Condition
The aim of this study is to study the diffusion capacitance's efficiency of the n + -p-p + bifacial solar cell. The dependence of… 
2012
2012
Theoretical Study of the Influence of Irradiation on a Silicon Solar Cell Under Multispectral Illumination
This study aims to demonstrate the effects of particles irradiation on the silicon solar cell properties. A theoretical study of… 
2011
2011
Characterization of GaInP / Ge heterostructure solar cells by capacitance measurements at forward bias under illumination
The n-GaInP/n-p Ge heterostructure sloar cells grown by OMVPE were studied by new technique based on the diffusion capacitance… 
2011
2011
Lawrence Berkeley National Laboratory Lawrence Berkeley National Laboratory Title Design of Low-Noise Output Amplifiers for P-channel Charge-Coupled Devices Fabricated on High-Resistivity Silicon…
We describe the design and optimization of low-noise, single-stage output amplifiers for p-channel charge-coupled devices (CCDs… 
2007
2007
Design of ALU and Cache Memory for an 8 bit ALU
2003
2003
Application of an SOI
Systems-on-chips (SoCs) that combine digital and high-speed communication circuits present new opportunities for powersaving… 
2002
2002
Buffer Repeaters
Repeaters are widely used to combat the quadratic delay of long on-chip wires. A conventional repeater is a CMOS inverter placed… 
2002
2002
Diffusion Capacitance of an Epitaxial High Barrier Schottky Diode
A low barrier Schottky diode is a majority carrier device. But, a high barrier Schottky diode injects minority carrier at forward… 
1994
1994
A Physical Charge-Based Model for the Space Charge Region of Abrupt and Linear Semiconductor Junctions
A new, physically justified, charge-based expression for the semiconductor space charge region capacitance is derived. This… 
1993
1993
Fermi threshold field effect transistor with reduced gate and diffusion capacitance
낮은 게이트 및 확산 용량을 가지는 개선된 페르미 FET구조는 게이트 아래 기판내 예정된 깊이에 있는 채널내로 전도 캐리어가 흐르게 한다. 이때 반도체의 표면에서 반전층이 발생되는 것을 필요로 하지 않는다. 낮은 용량 페르미 FET…