P–n diode

Known as: Forward bias, Forward voltage, P-n diode 
(See also: p–n junction and Diode § Semiconductor diodes) This article provides a more detailed explanation of p–n diode behavior than that found in… (More)
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Papers overview

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2015
2015
Vertical structured GaN power devices have recently been attracting a great interest because of their potential on extremely high… (More)
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2014
2014
There is a great interest in monolithic GaN semiconductor devices with high current capability for power electronics. In this… (More)
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2014
2014
This letter demonstrates GaN vertical Schottky and p-n diodes on Si substrates for the first time. With a total GaN drift layer… (More)
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2013
2013
The p-n junction diode and field-effect transistor are the two most ubiquitous building blocks of modern electronics and… (More)
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2013
2013
In this paper, vertical p-n diodes fabricated on pseudobulk gallium nitride (GaN) substrates are discussed. The measured devices… (More)
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Highly Cited
2008
Highly Cited
2008
A simulation study on a new rectifier concept is presented. This device basically consists of two gates with different… (More)
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2008
2008
This paper presents the development and implementation of a physics-based diode model which can simulate aspects of high-voltage… (More)
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2007
2007
  • Ji Ung Lee
  • LEOS - IEEE Lasers and Electro-Optics Society…
  • 2007
The author demonstrates the formation of p-n junction diodes along individual single-walled carbon nanotubes (SWNTs). The paper… (More)
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Highly Cited
2004
Highly Cited
2004
A theoretical model for the dependence of the diode forward voltage (V/sub f/) on junction temperature (T) is developed. A new… (More)
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1984
1984
A p-n diode having a channel structure (static shielding diode, SSD) is proposed to increase the reverse blocking voltage of a… (More)
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