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P–n diode

Known as: Forward bias, Forward voltage, P-n diode 
(See also: p–n junction and Diode § Semiconductor diodes) This article provides a more detailed explanation of p–n diode behavior than that found in… Expand
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Papers overview

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Highly Cited
2014
Highly Cited
2014
This letter demonstrates GaN vertical Schottky and p-n diodes on Si substrates for the first time. With a total GaN drift layer… Expand
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Highly Cited
2014
Highly Cited
2014
We report a model describing the molecular orientation disorder in CH3NH3PbI3, solving a classical Hamiltonian parametrised with… Expand
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Highly Cited
2013
Highly Cited
2013
In this paper, vertical p-n diodes fabricated on pseudobulk gallium nitride (GaN) substrates are discussed. The measured devices… Expand
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Highly Cited
2010
Highly Cited
2010
In this paper, we report on the latest advancements in improving AlGaInN-based visible-light-emitting-diode (LED) efficiency in… Expand
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Highly Cited
2009
Highly Cited
2009
A high-efficiency CMOS rectifier circuit for UHF RFIDs was developed. The rectifier has a cross-coupled bridge configuration and… Expand
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Highly Cited
2005
Highly Cited
2005
Modern society is experiencing an ever-increasing demand for energy to power a vast array of electrical and mechanical devices… Expand
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Highly Cited
2005
Highly Cited
2005
The influence of selected control strategies on the level of low-order current harmonic distortion generated by an inverter… Expand
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Highly Cited
2004
Highly Cited
2004
A theoretical model for the dependence of the diode forward voltage (Vf) on junction temperature (Tj) is developed. An expression… Expand
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Highly Cited
2003
Highly Cited
2003
Two-terminal electrical bistable devices have been fabricated using a sandwich structure of organic/metal/organic as the active… Expand
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Highly Cited
1998
Highly Cited
1998
Practical design of high-voltage SiC Schottky rectifiers requires an understanding of the device physics that affect the key… Expand
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