High performance tunnel field-effect transistor by gate and source engineering

@article{Huang2014HighPT,
  title={High performance tunnel field-effect transistor by gate and source engineering},
  author={Ru Huang and Qianqian Huang and Shaowen Chen and Chunlei Wu and Jiaxin Wang and Xia An and Yangyuan Wang},
  journal={Nanotechnology},
  year={2014},
  volume={25},
  url={https://api.semanticscholar.org/CorpusID:19307022}
}
A new nanodevice technology based on TFET concepts, a multi-finger-gate TFET with a dopant-segregated Schottky source (mFSB-TFET) is proposed and experimentally demonstrated, indicating its dominant quantum BTBT mechanism for switching.
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12 Citations
Background Citations
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12 Citations

A Novel Comb-Gate-Overlap-Source Tunnel Field-Effect Transistor Based on the Electric Field Fringe Effect

In this article, a novel comb-gate-overlap-source TFET (CGOS-TFET) is designed and fabricated. The device combines surface tunneling with the electric field fringe effect to improve the tunneling…

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A Si/Ge heterojunction line tunnel field-effect transistor (LTFET) with a symmetric heteromaterial gate is proposed. Compared to single-material-gate LTFETs, the heteromaterial gate LTFET shows an…

The effects of source doping concentration and doping gradient on the ON-state current of Si nanowire TFETs

The tunnel field-effect transistor (TFET) is considered a promising next-generation transistor due to its potentially limit-breaking low subthreshold swing and better immunity against short-channel…

A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance

By using the dopingless channel and fin structure, the difficulties of doping process and asymmetric gate overlap formation can be resolved and the structure of DF-TFET can possess good manufacture applicability and remarkably reduce footprint.

Investigation on the Effects of Gate-Source Overlap/Underlap and Source Doping Gradient of n-Type Si Cylindrical Gate-All-Around Tunnel Field-Effect Transistors

Tunnel field-effect transistor (TFET) has been considered as one of the promising next-generation transistors due to its potentially limit-breaking low subthreshold swing. In this work, we…

Demonstration of L-Shaped Tunnel Field-Effect Transistors

An L-shaped tunnel FET (TFET), which features band-to-band tunneling (BTBT) perpendicular to the channel direction, is experimentally demonstrated for the first time. It is more scalable than other…

First Principles Study of the Ambipolarity in a Germanene Nanoribbon Tunneling Field Effect Transistor

In this article, the effects of hetero-dielectric gate material and gate-drain underlap on the ambipolar and ON-state current of a germanene nanoribbon (GeNR) tunneling field-effect transistors…

Analytical model of drain current of cylindrical surrounding gate p-n-i-n TFET

Analytical modeling on the drain current characteristics of gate-all-around TFET with the incorporation of short-channel effects

Buried graphene heterostructures for electrostatic doping of low-dimensional materials

The fabrication and characterization of steep slope transistor devices based on low-dimensional materials requires precise electrostatic doping profiles with steep spatial gradients in order to…

29 References

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Improving the on-current has been the focus of enhancing the performance of tunnel field-effect transistors (TFETs). In this paper, we show that the increase in I_ON is not sufficient to improve the…

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