Demonstration of L-Shaped Tunnel Field-Effect Transistors

@article{Kim2016DemonstrationOL,
  title={Demonstration of L-Shaped Tunnel Field-Effect Transistors},
  author={Sang Wan Kim and J. Hyun Kim and Tsu-Jae King Liu and Woo Young Choi and Byung-Gook Park},
  journal={IEEE Transactions on Electron Devices},
  year={2016},
  volume={63},
  pages={1774-1778}
}
An L-shaped tunnel FET (TFET), which features band-to-band tunneling (BTBT) perpendicular to the channel direction, is experimentally demonstrated for the first time. It is more scalable than other vertical-BTBT-based TFET designs and provides more than 1000× higher ON-current (ION) than a conventional planar TFET with the same gate overdrive (Vov) of 0.8 V, due to improved subthreshold swing (S) and larger tunnel junction area. Its temperature dependence, constant S, and nonlinear output… CONTINUE READING
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Design guideline of Si-based L-shaped tunneling field-effect transistors

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