• Publications
  • Influence
On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors
Abstract According to the recent prediction made by the Semiconductor Industry Association (SIA) in International Technology Roadmap for Semiconductors (ITRS), the silicon technology will continueExpand
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Approximation of the length of velocity saturation region in MOSFET's
This work presents an accurate approximation of the length of velocity saturation region (LVSR) based on the calculation of one-dimensional (1-D) electric field distribution near the drain region ofExpand
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A physically-based MOS transistor avalanche breakdown model
  • H. Wong
  • Materials Science
  • 1 December 1995
A physically based breakdown model for MOSFET's is presented to rectify the unexplained experimental breakdown behaviors. The drain avalanche breakdown in the MOS transistor can be caused by eitherExpand
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Cathodoluminescence and photoluminescence of amorphous silicon oxynitride
Abstract The cathodoluminescence and photoluminescence of amorphous silicon oxynitride (a- SiO x N y ) films with different compositions were measured for the first time in the near infrared toExpand
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A novel gate boosting circuit for 2-phase high voltage CMOS charge pump
A novel gate boosting circuit is proposed for general switched-capacitor charge pump. The proposed circuit only requires two small transistors to generate the necessary driving signal from a clockExpand
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Atomic and electronic structure of amorphous and crystalline hafnium oxide: X-ray photoelectron spectroscopy and density functional calculations
The atomic structure of amorphous and crystalline hafnium oxide (HfO2) films was examined using x-ray diffractometry and Hf edge x-ray absorption spectroscopy. According to the x-ray photoelectronExpand
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  • PDF
Interface bonding structure of hafnium oxide prepared by direct sputtering of hafnium in oxygen
The interface properties of the hafnium gate oxide films prepared by direct sputtering of hafnium in oxygen with rapid thermal annealing have been investigated in detail. X-ray photoelectronExpand
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Nano-CMOS Gate Dielectric Engineering
  • H. Wong
  • Materials Science
  • 28 November 2011
Overview of CMOS Technology Introduction MOS Transistor: A Quick Introduction to Classical Models Short-Channel Effects and Short-Channel Modifications Features and Uniqueness of MOS Transistor MOSExpand
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A Bias-Bounded Digital True Random Number Generator Architecture
TLDR
Bias phenomenon has been a ubiquitous problem in the designs of digital True Random Number Generator (TRNG). Expand
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Robust and area-efficient nLDMOS-SCR with waffle layout structure for high-voltage ESD protection
A novel waffle-type nLDMOS-SCR ESD clamp with compact source and drain for high-voltage ESD protection is proposed and realised using the 0.35 µm, 30/5 V bipolar-CMOS-DMOS (BCD) process. With thisExpand
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