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potassium arsenite solution

Known as: Fowler's solution, arsenite potassium, potassium arsenite 
National Institutes of Health

Related topics

Related topics

3 relations

Broader (2)

ArsenitesPotassium Compounds
Potassium arsenite

Papers overview

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2017
2017
Novel Fabrication Method for Forming Damage-Free Sensing Oxide and Threshold Voltage-Tunable Complementary Metal-Oxide Semiconductor in a pH Sensor-CMOS Hybrid System
A novel fabrication process is proposed to form an ion-sensitive field effect transistor (ISFET) with damage-free gate oxide and… 
2013
2013
Comparison of novel punch-through diode (NPN) selector with MIM selector for bipolar RRAM
Recently, we have experimentally demonstrated a bipolar RRAM selector based on punch-through diode using an NPN stack by Si… 
2010
2010
11.4: Examination of field emission from copper knife edge cathodes with low-work function coatings
We report experiments and analysis of field emission from copper knife-edge (CKE) cathodes, both bare and coated with low work… 
2006
2006
In-situ opening aligned carbon nanotube films/arrays for multichannel ballistic transport in electrical interconnect
Carbon nanotubes (CNTs) have been proposed for applications in microelectronic applications, especially for electrical… 
2006
2006
In-situ Opening Aligned Carbon Nanotubes and Applications for Device Assembly and Field Emission
Carbon nanotubes (CNTs) have been proposed for applications in microelectronic applications, especially for electrical… 
2006
2006
A Novel Non-Volatile Memory Cell Using a Gated-Diode Structure with a Trapping-Nitride Storage Layer
A novel trapping-nitride-based non-volatile memory cell by using a gated-diode structure is proposed. Fowler-Nordheim (FN… 
2004
2004
A self-consistent modeling of the leakage current through thin oxides
A simple computationally effective semi-analytical macroscopic technique of self-consistent calculations of the electrical… 
2003
2003
Erratic Bits in Flash Memories under Fowler-Nordheim Programming
This work demonstrates the existence of erratic bits in Flash memories also after Fowler Nordheim programming, i.e. injecting… 
2002
2002
Oxide roughness effect on tunneling current of MOS diodes
Two-dimensional (2-D) device simulation is used to investigate the tunneling current of metal ultra-thin-oxide silicon tunneling… 
2001
2001
Characterization of Ultrathin Oxynitride (18–21 Å) Gate Dielectrics by NH3 Nitridation and N2O RTA Treatment
In this paper, we developed a new method to grow robust ultrathin oxynitride ( OT = 18 Å) film with effective dielectric constant… 
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