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Wetting layer

Known as: WL 
In experimental physics, a wetting layer is an initial layer of atoms that is epitaxially grown on a surface upon which self-assembled quantum dots… 
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Related topics

Related topics

6 relations
Electronic structureEpitaxyMolecular beam epitaxyQuantum dot

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2015
2015
Modulation response, mixed-mode oscillations and chaotic spiking in quantum dot light emitting diode
2014
2014
Opportunistic provisioning for multicast virtual network requests
In this paper, we investigate the problem of online multicast virtual network embedding (MVNE) by introducing the strategies of… 
2012
2012
Identification of Three Distinct Classes of Satellite RNAs Associated With Two Cucumber mosaic virus Serotypes from the Ornamental Groundcover Vinca minor
Cucumber mosaic virus (CMV) is a cosmopolitan virus which may also have small satellite RNAs (satRNA) associated with it… 
2010
2010
On HR calculus, quaternion valued stochastic gradient, and adaptive three dimensional wind forecasting
Short term forecasting of wind field in the quaternion domain is addressed. This is achieved by casting the three components of… 
2004
2004
Adsorption, initial growth and desorption kinetics of p-quaterphenyl on polycrystalline gold surfaces
2004
2004
Surface energetics and structure of the Ge wetting layer on Si(100)
Ge deposited on Si(100) initially forms heteroepitaxial layers, which grow to a critical thickness of ~3 MLs before the… 
2003
2003
Ordered mono- and multilayer films of sexiphenyl on Al(111): a LEED investigation
2001
2001
Responses of tall fescue cultivars to an irrigation gradient
particularly in the Intermountain Region. This has led to an increased interest in upgrading privately owned Seasonal… 
Highly Cited
2000
Highly Cited
2000
Temperature dependence of gain saturation in multilevel quantum dot lasers
The temperature dependence of quantum dot (QD) optical gain is analyzed using a multilevel model and compared with experiment… 
2000
2000
Formation and ordering effects of C-induced Ge dots grown on Si (001) by molecular beam epitaxy
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