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Universal memory
Universal memory refers to a hypothetical computer data storage device combining the cost benefits of DRAM, the speed of SRAM, the non-volatility of…
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Related topics
Related topics
20 relations
Bubble memory
CPU cache
Computer data storage
Ferroelectric RAM
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Broader (2)
Computer memory
Non-volatile memory
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2015
2015
Spin-based devices for future microelectronics
V. Sverdlov
,
S. Selberherr
International Symposium on Next-Generation…
2015
Corpus ID: 28601103
With CMOS technology rapidly approaching its scaling limits, the electron spin attracts much attention as an alternative degree…
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Review
2014
Review
2014
On the impact of process variability and aging on the reliability of emerging memories (Embedded tutorial)
Marco Indaco
,
P. Prinetto
,
E. Vatajelu
IEEE European Test Symposium
2014
Corpus ID: 20761375
Due to the rapid development of smartphones, notebooks and tablets, the need for high density, low power, high performance SoCs…
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2013
2013
Design method of stacked type MRAM with NAND structured cell
S. Tamai
,
S. Watanabe
2013
Corpus ID: 55842363
The stacked type MRAM with NAND structured cell which has the features of high speed operation competitive DRAM, non-volatility…
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Review
2012
Review
2012
Modeling Emerging Non-volatile Memories: Current Trends and Challenges
A. Makarov
,
V. Sverdlov
,
S. Selberherr
2012
Corpus ID: 14317193
2011
2011
An ionic bottle for high-speed, long-retention memristive devices
D. Strukov
,
R. S. Williams
2011
Corpus ID: 51764325
We propose a new type of bipolar resistive switch or memristive device, based on an ionic bottle, which is characterized by both…
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2011
2011
A larger stacked layer number scalable TSV-based 3D-SRAM for high-performance universal-memory-capacity 3D-IC platforms
Meng-Fan Chang
,
Wei-Cheng Wu
,
+8 authors
H. Yamauchi
Symposium on VLSI Circuits
2011
Corpus ID: 6142792
This work demonstrates the first fabricated TSV-based die-to-die bonding stacked-layer-number-scalable 3D-SRAM macro. This 3D…
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2009
2009
Design and Evaluation of a Carbon Nanotube-Based Programmable Architecture
S. Chilstedt
,
Chen Dong
,
Deming Chen
International journal of parallel programming
2009
Corpus ID: 854024
In the hunt to find a replacement to CMOS, material scientists are developing a wide range of nanomaterials and nanomaterial…
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2008
2008
Nanotube-based data storage devices
E. Bichoutskaia
,
A. Popov
,
Y. Lozovik
2008
Corpus ID: 18687543
2008
2008
Cell Design Considerations for Phase Change Memory as a Universal Memory
C. Lam
International Symposium on VLSI Technology…
2008
Corpus ID: 15034179
The ultimate goal of emerging memory technology researchers and developers is to devise a universal memory to replace all…
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2008
2008
Silicon quantum dot devices
S. Oda
International Congress of Mathematicans
2008
Corpus ID: 43072573
Quantum dot structures, where electrons are confined three-dimensionally in the below 10 nm scale, show characteristics quite…
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