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Transistor Device Component
Known as:
Transistor
A semiconductor component with three terminals that is designed to amplify a signal. It is the fundamental component of all modern circuitry.
National Institutes of Health
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Medical Device Component or Accessory
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Transistors
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2006
Highly Cited
2006
Enhancing CMOS transistor performance using lattice-mismatched materials in source/drain regions
Y. Yeo
International SiGe Technology and Device Meeting
2006
Corpus ID: 25710734
We explore several technology options for the enhancement of electron and hole mobility in complementary metal–oxide…
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Highly Cited
2004
Highly Cited
2004
Carbon nanotube transistor operation at 2.6 Ghz
Shengdong Li
,
Zhen Yu
,
S. Yen
,
W. Tang
,
P. Burke
2004
Corpus ID: 62895452
We present the first demonstration of single-walled carbon nanotube transistor operation at microwave frequencies. To measure the…
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Highly Cited
2004
Highly Cited
2004
A nonvolatile memory element based on an organic field-effect transistor
K. Unni
,
R. D. Bettignies
,
S. Dabos-Seignon
,
J. Nunzi
2004
Corpus ID: 119725262
Organic field-effect transistors were fabricated with pentacene as the active material and a ferroelectric copolymer poly…
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Highly Cited
2004
Highly Cited
2004
Synthesis and characterization of diperfluorooctyl-substituted phenylene-thiophene oligomers as n-type semiconductors. Molecular structure-film microstructure-mobility relationships, organic field…
A. Facchetti
,
Joseph A. Letizia
,
Myung‐Han Yoon
,
M. Mushrush
,
H. Katz
,
T. Marks
2004
Corpus ID: 6977529
A new series of mixed phenylene−thiophene oligomers with terminal n-perfluorooctyl groups has been synthesized. These compounds…
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Highly Cited
2004
Highly Cited
2004
High inversion current in silicon nanowire field effect transistors
S. Koo
,
A. Fujiwara
,
Jinhua Han
,
E. Vogel
,
C. Richter
,
J. Bonevich
2004
Corpus ID: 55263936
Silicon nanowire (SiNW) field effect transistors (FETs) with channel widths down to 20 nm have been fabricated by a conventional…
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Highly Cited
2002
Highly Cited
2002
Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor
M. Passlack
,
J. Abrokwah
,
+6 authors
A. Kummel
IEEE Electron Device Letters
2002
Corpus ID: 7210394
Self-aligned GaAs enhancement mode MOS heterostructure field-effect transistors (MOS-HFET) have been successfully fabricated for…
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Highly Cited
1989
Highly Cited
1989
Field-effect transistor self-electrooptic effect device: integrated photodiode, quantum well modulator and transistor
D. Miller
,
M. Feuer
,
+4 authors
D. Chemla
IEEE Photonics Technology Letters
1989
Corpus ID: 40471276
The authors propose and demonstrate the integration of a photodiode, a quantum-confined Stark-effect quantum-well optical…
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Highly Cited
1986
Highly Cited
1986
Quantum-well resonant tunneling bipolar transistor operating at room temperature
F. Capasso
,
S. Sen
,
A. Gossard
,
A. L. Hutchinson
,
J. English
IEEE Electron Device Letters
1986
Corpus ID: 7533637
The first resonant tunneling bipolar transistor (RBT) is reported. The AlGaAs/GaAs wide-gap emitter device, grown by molecular…
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Highly Cited
1986
Highly Cited
1986
Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor
T. Henderson
,
M. I. Aksun
,
+5 authors
Luke F. Lester
IEEE Electron Device Letters
1986
Corpus ID: 19034994
We report excellent dc and millimeter-wave performance in In0.15Ga0.85As/Al0.15Ga0.85As pseudomorphic modulation-doped field…
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Highly Cited
1985
Highly Cited
1985
Heterojunction bipolar transistor using a (Ga,In)P emitter on a GaAs base, grown by molecular beam epitaxy
M. Mondry
,
H. Kroemer
IEEE Electron Device Letters
1985
Corpus ID: 36822313
We report the first N-p-n heterojunction bipolar transistor (HBT) using a (Ga,In)P/GaAs heterojunction emitter on a GaAs base…
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