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We present metal-gate high-k-dielectric enhancement-mode (e-mode) III-V MOSFETs with the highest reported effective mobility and transconductance to date. The devices employ a GaGdO high-k (k = 20)(More)
In this letter, 1-mum GaAs-based enhancement-mode n-channel devices with channel mobility of 5500 cm<sup>2</sup>/Vmiddots and g <sub>m</sub> exceeding 250 mS/mm have been fabricated. The measured(More)