Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor

@article{Passlack2002SelfalignedGP,
  title={Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor},
  author={Matthias Passlack and J. Abrokwah and Ravi Droopad and Zhiyi Yu and C. Overgaard and Sang In Yi and M. Hale and James Sexton and A. C. Kummel},
  journal={IEEE Electron Device Letters},
  year={2002},
  volume={23},
  pages={508-510}
}
Self-aligned GaAs enhancement mode MOS heterostructure field-effect transistors (MOS-HFET) have been successfully fabricated for the first time. The MOS devices employ a Ga/sub 2/O/sub 3/ gate oxide, an undoped Al/sub 0.75/Ga/sub 0.25/As spacer layer, and undoped In/sub 0.2/Ga/sub 0.8/As as channel layer. The p-channel devices with a gate length of 0.6 /spl mu/m exhibit a maximum DC transconductance g/sub m/ of 51 mS/mm which is an improvement of more than two orders of magnitude over… CONTINUE READING
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