Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor

  title={Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor},
  author={Matthias Passlack and J. Abrokwah and Ravi Droopad and Zhiyi Yu and C. Overgaard and Sang In Yi and M. Hale and James Sexton and A. C. Kummel},
  journal={IEEE Electron Device Letters},
Self-aligned GaAs enhancement mode MOS heterostructure field-effect transistors (MOS-HFET) have been successfully fabricated for the first time. The MOS devices employ a Ga/sub 2/O/sub 3/ gate oxide, an undoped Al/sub 0.75/Ga/sub 0.25/As spacer layer, and undoped In/sub 0.2/Ga/sub 0.8/As as channel layer. The p-channel devices with a gate length of 0.6 /spl mu/m exhibit a maximum DC transconductance g/sub m/ of 51 mS/mm which is an improvement of more than two orders of magnitude over… CONTINUE READING
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Method of forming a gate quality oxide-compound semiconductor structure

  • Z. Yu, M. Passlack, B. Bowers, C. D. Overgaard, R. Droopad, J. K. Abrokwah
  • U.S. Patent 6 159 834, 2000.
  • 2000

Advances in GaAs MOSFETs using GaO (Gd O ) as gate oxide

  • Y. C. Wang, M. Hong, +7 authors A. Y. Cho
  • inProc. Mat. Res. Soc. Symp. , vol. 573, 1999, pp…
  • 1999
1 Excerpt

Advancing metal-oxide-semiconductor theory: Steady-state nonequilibrium conditions

  • M. Passlack, M. Hong, +4 authors T. D. Harris
  • J. Appl. Phys. , vol. 81, pp. 7647–7661, 1997.
  • 1997
1 Excerpt

Demon - stration od enhancement - mode p - and n - channel GaAs MOSFETs with Ga O ( Gd O ) as gate oxide

  • M. Hong F. Ren, W. S. Hobson, +6 authors A. Y. Cho
  • 1997

Demonstration od enhancement-mode p- and n-channel GaAs MOSFETs with Ga O (Gd O ) as gate oxide,”Solid-State Electron

  • F. Ren, M. Hong, +7 authors A. Y. Cho
  • vol. 41,
  • 1997

Submicron P-channel (Al,Ga)As/(In,Ga)As HIGFETs

  • J. K. Abrokwah, R. Lucero, J. A. Hallmark, B. Bernhardt
  • IEEE Trans. Electron Devices, vol. 44, pp. 1040…
  • 1997
1 Excerpt

Quasistatic and high frequency capacitance-voltage characterization of Ga O –GaAs structures fabricated by in-situ molecular-beam epitaxy

  • M. Passlack, M. Hong, J. P. Mannaerts
  • Appl. Phys. Lett. , vol. 68, no. 8, pp. 1099–1101…
  • 1996
3 Excerpts

Ga O films for electronic and optoelectronic applications

  • M. Passlack, E. F. Schubert, +7 authors G. J. Zydzik
  • J. Appl. Phys. , vol. 77, pp. 686–693, 1995.
  • 1995
1 Excerpt

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