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Thickness (graph theory)
Known as:
Biplanar graph
, Graph thickness
, Thickness
In graph theory, the thickness of a graph G is the minimum number of planar graphs into which the edges of G can be partitioned. That is, if there…
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Related topics
Related topics
10 relations
1-planar graph
Arboricity
Book embedding
Circular layout
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Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2013
Highly Cited
2013
Understanding the effect of PCB layout on circuit performance in a high frequency gallium nitride based point of load converter
D. Reusch
,
J. Strydom
Applied Power Electronics Conference
2013
Corpus ID: 47558221
The introduction of enhancement mode gallium nitride based power devices such as the eGaN®FET offers the potential to achieve…
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Highly Cited
2003
Highly Cited
2003
Photografting and the Control of Surface Chemistry in Three-Dimensional Porous Polymer Monoliths
T. Rohr
,
E. Hilder
,
J. Donovan
,
F. Švec
,
J. Fréchet
2003
Corpus ID: 55438323
The photografting of porous three-dimensional materials has been achieved using a benzophenone-initiated surface…
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Highly Cited
1999
Highly Cited
1999
Printing Process Suitable for Reel-to-Reel Production of High-Performance Organic Transistors and Circuits
J. Rogers
,
Zhenan Bao
,
A. Makhija
,
P. Braun
Advances in Materials
1999
Corpus ID: 17100558
cause appropriate compounds now exist for many types of devices, research has expanded to include patterning methods that can…
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Highly Cited
1998
Highly Cited
1998
Electrochemical Investigations of Cobalt-Doped LiMn 2 O 4 as Cathode Material for Lithium-Ion Batteries
P. Arora
,
B. Popov
,
R. White
1998
Corpus ID: 8278009
A wide range (y = 0.05-0.33) of Co-doped LiCo y Mn 2-y O 4 spinels were synthesized and electrochemically characterized. These Co…
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Highly Cited
1998
Highly Cited
1998
25 nm CMOS design considerations
Y. Taur
,
C. Wann
,
David J. Frank
International Electron Devices Meeting…
1998
Corpus ID: 29825196
This paper explores the limit of bulk (or partially-depleted SOI) CMOS scaling. A feasible design for 25 nm (channel length) CMOS…
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Highly Cited
1988
Highly Cited
1988
Role of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regime
Paul R. Berger
,
Kevin H. Chang
,
P. Bhattacharya
,
Jasprit Singh
,
K. Bajaj
1988
Corpus ID: 98015932
Theoretical and experimental studies are presented to understand the initial stages of growth of InGaAs on GaAs. Thermodynamic…
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Highly Cited
1985
Highly Cited
1985
Polymer Films on Electrodes XVI . In Situ Ellipsometric Measurements of Polybipyrazine, Polyaniline, and Polyvinylferrocene Films
C. Carlin
,
L. J. Kepley
,
A. Bard
1985
Corpus ID: 43147230
Ellipsometry was used to study the electrodeposition of polymer films formed by oxidation of bipyrazine, polyvinylferrocene, and…
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Review
1985
Review
1985
Thermal nitridation of Si and SiO2for VLSI
M. Moslehi
,
K. C. Saraswat
IEEE Transactions on Electron Devices
1985
Corpus ID: 1004044
This paper presents an extensive review of our work on thermal nitridation of Si and SiO2. High-quality ultrathin films of…
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Highly Cited
1976
Highly Cited
1976
Analysis of grating-coupled radiation in GaAs:GaAlAs lasers and waveguides - I
W. Streifer
,
D. Scifres
,
R. Burnham
IEEE Journal of Quantum Electronics
1976
Corpus ID: 40165597
Grating-coupled radiation in GaAs:GaAlAs lasers and waveguides is analyzed. A general formulation is developed for arbitrary…
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Highly Cited
1971
Highly Cited
1971
Studies of effects of hydrogen bonding on orientational relaxation using picosecond light pulses
T. Chuang
,
K. Eisenthal
1971
Corpus ID: 55768152
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