Segregated alpha beta protein
National Institutes of Health
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This paper presents extensive study of proposed 4H-Silicon Carbide (SiC) based Dopant Segregated (DS) Schottky Barrier (SB…
Low temperature (T ≤ 480C after gate stack) DS Metal S/D GAA PFETs were fabricated and benchmarked to devices with S/D activation…
In this paper, the gate-voltage dependent source/drain (S/D) resistance (RSD) in dopant segregated (DS) Schottky barrier (SB…
A critical issue for EUVL is the minimization of collector degradation from intense plasma erosion, debris deposition and…