4H-SiC-Dopant Segregated Schottky Barrier Cylindrical Gate All Around MOSFET for high speed and high power microwave applications

Abstract

This paper presents extensive study of proposed 4H-Silicon Carbide (SiC) based Dopant Segregated (DS) Schottky Barrier (SB) Cylindrical Gate All Around (CGAA) MOSFET with high-k gate dielectric for hostile environment such as high temperature and radiation exposure for high power microwave applications. The Analog/RF performance of SiC-CGAA has been… (More)

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