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Schottky barrier

Known as: Schottky, Schottky contact, Schottky junction 
A Schottky barrier, named after Walter H. Schottky, is a potential energy barrier for electrons formed at a metal–semiconductor junction.Schottky… 
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Related topics

Related topics

20 relations
Ballistic conduction in single-walled carbon nanotubesCapacitance–voltage profilingDeep-level transient spectroscopyDepletion region

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2014
Highly Cited
2014
Electrical contacts to monolayer black phosphorus: A first-principles investigation
We report first principles theoretical investigations of possible metal contacts to monolayer black phosphorus (BP). By analyzing… 
Highly Cited
2011
Highly Cited
2011
Tuning Schottky diodes at the many-layer-graphene/ semiconductor interface by doping
Highly Cited
2007
Highly Cited
2007
Air-stable n-channel organic thin-film transistors with high field-effect mobility based on N,N′-bis(heptafluorobutyl)-3,4:9,10-perylene diimide
The thin-film transistor characteristics of n-channel organic semiconductor, N,N′-bis(2,2,3,3,4,4,4-heptafluorobutyl)-perylene… 
Highly Cited
2004
Highly Cited
2004
Monolithic Integration of Carbon Nanotube Devices with Silicon MOS Technology
An integrated circuit combining single-walled carbon nanotube (SWNT) devices with n-channel metal oxide semiconductor (NMOS… 
Highly Cited
2004
Highly Cited
2004
N-type Schottky barrier source/drain MOSFET using ytterbium silicide
Ytterbium silicide, for the first time, was used to form the Schottky barrier source/drain (S/D) of N-channel MOSFETs. The device… 
Highly Cited
2004
Highly Cited
2004
A Selective Electrochemical Approach to Carbon Nanotube Field-Effect Transistors
Commercial fabrication of field-effect transistors (FETs) using carbon nanotubes has been hindered as all current production… 
Highly Cited
2000
Highly Cited
2000
A broadband 10 GHz track-and-hold in Si/SiGe HBT technology
This paper presents a track-and-hold amplifier for sub-sampling communications applications based on a diode bridge design with… 
Highly Cited
1999
Highly Cited
1999
Submicron transferred-substrate heterojunction bipolar transistors
We report submicron transferred-substrate AlInAs/GaInAs heterojunction bipolar transistors (HBT's). Devices with 0.4-/spl mu/m… 
Highly Cited
1974
Highly Cited
1974
High-speed integrated logic with GaAs MESFET's
The feasibility of using GaAs metal-semiconductor field-effect transistors (GaAs MESFET's) in fast switching and high-speed… 
Highly Cited
1970
Highly Cited
1970
Microwave properties of Schottky-barrier field-effect transistors
The microwave properties of silicon Schottky-barrier field-effect transistor(MESFET'S) with a gate-length of one micrometer are… 
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