Schottky barrier

Known as: Schottky, Schottky contact, Schottky junction 
A Schottky barrier, named after Walter H. Schottky, is a potential energy barrier for electrons formed at a metal–semiconductor junction.Schottky… (More)
Wikipedia

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2015
2015
In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low… (More)
  • figure 1
  • figure 2
  • figure 3
  • figure 4
Is this relevant?
2010
2010
Phenomenological models for the internal quantum efficiency of Schottky barrier photodetectors suitable for the detection of… (More)
  • figure 1
  • figure 3
  • figure 4
  • figure 6
  • figure 7
Is this relevant?
2010
2010
GaAs Schottky barrier diodes continue to be heavily used in millimeter and submillimeter wavelength heterodyne receiver… (More)
  • figure 1
  • figure 2
  • figure 3
  • figure 4
  • figure 5
Is this relevant?
2005
2005
The effect of dopant segregation (DS) on the electrical behavior of silicon-on-insulator Schottky barrier MOSFETs (SB-MOSFETs) is… (More)
  • figure 1
  • figure 2
  • figure 3
  • figure 5
  • figure 4
Is this relevant?
Highly Cited
2004
Highly Cited
2004
A novel approach for achieving high-performance Schottky-source/drain MOSFETs (SBTs: Schottky Barrier Transistors) is proposed… (More)
  • table 1
Is this relevant?
2004
2004
Ytterbium silicide, for the first time, was used to form the Schottky barrier source/drain (S/D) of N-channel MOSFETs. The device… (More)
  • figure 1
  • figure 3
  • figure 2
  • table I
  • figure 4
Is this relevant?
Highly Cited
1998
Highly Cited
1998
We present, for the first time, a physical contact tunneling model that is critical for studying the increasingly important… (More)
  • figure 2
  • figure 1
  • figure 4
  • figure 3
  • figure 7
Is this relevant?
1995
1995
Characteristics of 4H-SiC Schottky barrier diodes with breakdown voltages up to 1000 V are reported for the first time. The… (More)
  • figure 2
Is this relevant?
1983
1983
A common failure mechanism in bulk CMOS integrated circuits is due to the latchup of the parasitic SCR structure. Using Schottky… (More)
  • figure 1
  • figure 2
  • table I
  • figure 3
  • table I
Is this relevant?
1976
1976
A new nuclear betavotaic battety is described. It uses a Schottky barrier in place of the more standard p-n junction diode, along… (More)
  • table 1
  • figure 1
  • figure 2
  • figure 3
  • figure 4
Is this relevant?