Skip to search formSkip to main contentSkip to account menu

SONOS

Known as: Sonos (disambiguation) 
SONOS, short for "Silicon-Oxide-Nitride-Oxide-Silicon", is a type of non-volatile computer memory closely related to Flash RAM. It is one of Charge… 
Wikipedia (opens in a new tab)

Related topics

Related topics

13 relations
Address decoderCharge pumpCharge trap flashComputer memory

Broader (1)

Non-volatile memory

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2011
2011
Vertical-Si-Nanowire-Based Nonvolatile Memory Devices With Improved Performance and Reduced Process Complexity
This paper presents vertical-Si-nanowire (SiNW) gate-all-around nonvolatile memory (NVM) devices of two different kinds: junction… 
2007
2007
Gate-all-around Twin Silicon nanowire SONOS Memory
We have developed gate-all-around (GAA) SONOS with ultra thin twin silicon nanowires for the first time. By using channel hot… 
2006
2006
Lateral profiling of trapped charge in SONOS flash EEPROMs programmed using CHE injection
The lateral profile of trapped charge in a silicon-oxide-nitride-oxide-silicon (SONOS) electrically erasable programmable read… 
2006
2006
Reliability Model of Bandgap Engineered SONOS (BE-SONOS)
Reliability properties of bandgap engineered SONOS (BE-SONOS) (Lue et al., 2005) are extensively studied. First, the erase… 
Review
2005
Review
2005
Non-volatile memory technologies for beyond 2010
  • Y. Shin
  • Digest of Technical Papers. Symposium on VLSI…
  • 2005
  • Corpus ID: 30023377
The development of Flash memory technology over the past decade has been one of the driving forces behind the tremendous growth… 
2003
2003
3D TFT-SONOS memory cell for ultra-high density file storage applications
For the first time, a scalable, low power, deep-submicron TFT-SONOS (Thin-Film Transistor Silicon-Oxide-Nitride-Oxide-Silicon… 
Highly Cited
2003
Highly Cited
2003
Novel multi-bit SONOS type flash memory using a high-k charge trapping layer
We demonstrated SONOS flash memory with a SiO/sub 2//High-k/SiO/sub 2/ structure based on a 2-bit/cell scheme. We evaluated three… 
Highly Cited
2001
Highly Cited
2001
Data retention behavior of a SONOS type two-bit storage flash memory cell
  • W. TsaiN. Zous S. Gu
  • International Electron Devices Meeting. Technical…
  • 2001
  • Corpus ID: 34486471
Data retention loss mechanisms in a 2-bit SONOS type flash EEPROM cell with hot electron programming and hot hole erase are… 
Highly Cited
1998
Highly Cited
1998
A new SONOS memory using source-side injection for programming
We reported a new polysilicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory using channel hot electron injection for… 
Highly Cited
1996
Highly Cited
1996
A low voltage SONOS nonvolatile semiconductor memory technology
The triple dielectric SONOS (polysilicon-blocking oxide-silicon nitridetunnel oxide-silicon) structure is an attractive candidate… 
By clicking accept or continuing to use the site, you agree to the terms outlined in our Privacy Policy (opens in a new tab), Terms of Service (opens in a new tab), and Dataset License (opens in a new tab)