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Resistive random-access memory
Known as:
Resistive RAM
, ReRAM
, RRAM
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Resistive random-access memory (RRAM or ReRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the…
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Related topics
Related topics
11 relations
3D XPoint
CPU cache
Diode
Flash memory
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Broader (2)
Computer memory
Non-volatile memory
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2018
2018
Aliens: A Novel Hybrid Architecture for Resistive Random-Access Memory
Bing Wu
,
D. Feng
,
+5 authors
Yang Zhang
IEEE/ACM International Conference on Computer…
2018
Corpus ID: 53226575
Passive crossbar arrays of resistive random-access memory (RRAM) have shown great potential to meet the demands of future memory…
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2015
2015
HReRAM: A hybrid reconfigurable resistive random-access memory
M. Lastras-Montaño
,
A. Ghofrani
,
K. Cheng
Design, Automation and Test in Europe
2015
Corpus ID: 15625661
Passive crossbar arrays of memristors have been identified as excellent alternatives for future random-access memories. One…
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2015
2015
Resistive random access memory (ReRAM) device
쉥 시아
,
깁슨 개리
2015
Corpus ID: 149666955
One example includes a resistive random access memory (ReRAM) device. The device comprises a set of electrodes for receiving a…
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2015
2015
A Future Way of Storing Information: Resistive Random Access Memory.
Yanfeng Ji
,
Jianchen Hu
,
M. Lanza
IEEE Nanotechnology Magazine
2015
Corpus ID: 35034850
Electronic information storage has become one of the major needs of modern societies, and it represents a market of more than US…
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2014
2014
Investigation of radiation hardness of HfO2 resistive random access memory
B. Tsui
,
Ko-Chin Chang
,
B. Shew
,
Heng-Yuan Lee
,
M. Tsai
International Symposium on VLSI Technology…
2014
Corpus ID: 31497067
Radiation hardness of HfO2-based resistive random-access memory (RRAM) is investigated using extreme ultra-violet (EUV) and X-ray…
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2012
2012
A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory Devices
Yang Lu
,
B. Gao
,
+4 authors
Jinfeng Kang
IEEE Electron Device Letters
2012
Corpus ID: 21405941
A physical-based simplified model is presented to quantify the resistive switching behavior of oxide-based resistive random…
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2011
2011
Physical mechanism of HfO2-based bipolar resistive random access memory
Huan-Lin Chang
,
Hsuan-Chih Li
,
C. Liu
,
F. Chen
,
M. Tsai
Proceedings of International Symposium on VLSI…
2011
Corpus ID: 18532604
The (anode) TiN/Ti/HfO2/TiN (cathode) resistive random access memory (RRAM) (Fig. 1) has shown yield ∼ 100% [1]. Its simple metal…
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2011
2011
Novel bipolar TaOx-based Resistive Random Access Memory
Wenjuan Wu
,
X. Tong
,
R. Zhao
,
Luping P. Shi
,
Hongxin Yang
,
Y. Yeo
11th Annual Non-Volatile Memory Technology…
2011
Corpus ID: 37405202
In this paper, we report a novel Cr/TaOx/Al (top to bottom) Resistive Random Access Memory (RRAM) which works as a bipolar…
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Highly Cited
2010
Highly Cited
2010
Resistive Switching Properties of $\hbox{Au}/ \hbox{ZrO}_{2}/\hbox{Ag}$ Structure for Low-Voltage Nonvolatile Memory Applications
Yingtao Li
,
S. Long
,
+7 authors
Ming Liu
IEEE Electron Device Letters
2010
Corpus ID: 31786275
The reliable resistive switching properties of Au/ZrO2/ Ag structure fabricated with full room temperature process are…
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Highly Cited
2010
Highly Cited
2010
Low power operating bipolar TMO ReRAM for sub 10 nm era
M. Kim
,
I. Baek
,
+13 authors
C. Chung
International Electron Devices Meeting
2010
Corpus ID: 6473222
The bottle neck of ReRAM (Resistive RAM) for post-NAND storage application is high operational current [1,2]. Herein, we report a…
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