Skip to search formSkip to main contentSkip to account menu

Programmable metallization cell

Known as: CBRAM, PMC 
The programmable metallization cell, or PMC, is a novel non-volatile computer memory developed at Arizona State University. PMC have been identified… 
Wikipedia (opens in a new tab)

Related topics

Related topics

12 relations
CMOSCharge pumpComputer memoryEEPROM

Broader (1)

Non-volatile memory

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Review
2017
Review
2017
A Link Between CBRAM Performances and Material Microscopic Properties Based on Electrical Characterization and Atomistic Simulations
In this paper, we investigate the link between various resistive memory (RRAM) electrical characteristics: endurance, window… 
2016
2016
(Invited) Conductive Bridging RAM (CBRAM): Then, Now, and Tomorrow
2015
2015
Realization of a Conductive Bridging RF Switch Integrated onto Printed Circuit Board
This paper presents a new approach for the realization of RF switches based on the Conductive Bridging Random Access Memory… 
2015
2015
From Memory in our Brain to Emerging Resistive Memories in Neuromorphic Systems
In this work, we will focus on the role that new nonvolatile resistive memory technologies (as OxRAM and CBRAM) can play in… 
2015
2015
Visualization of Conductive Filament during Write and Erase Cycles on Nanometer-Scale ReRAM Achieved by In-Situ TEM
The paper shows clear evidence that in-situ transmission electron microscopy (TEM) can be used as a powerful tool to analyze… 
2014
2014
Impact of SET and RESET conditions on CBRAM high temperature data retention
In this paper, we investigate the high temperature behavior of oxide-based conductive bridge memories. A methodology to optimize… 
Review
2014
Review
2014
On the impact of process variability and aging on the reliability of emerging memories (Embedded tutorial)
Due to the rapid development of smartphones, notebooks and tablets, the need for high density, low power, high performance SoCs… 
2013
2013
Simulation Models for Programmable Metallization Cells
i ABSTRACT Advances in software and applications continue to demand advances in memory. The ideal memory would be non-volatile… 
2012
2012
Field-driven ultrafast sub-ns programming in W\Al2O3\Ti\CuTe-based 1T1R CBRAM system
We optimize a 90nm-wide CuTe-based 1T1R CBRAM cell for highly controlled and ultrafast programming by engineering Al2O3… 
2009
2009
Improvement of CBRAM Resistance Window by Scaling Down Electrode Size in Pure-GeTe Film
TaN-pure-GeTe-Cu bipolar switching devices which can be adaptable to semiconductor processes were fabricated as a function of top… 
By clicking accept or continuing to use the site, you agree to the terms outlined in our Privacy Policy (opens in a new tab), Terms of Service (opens in a new tab), and Dataset License (opens in a new tab)