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Programmable metallization cell
Known as:
CBRAM
, PMC
The programmable metallization cell, or PMC, is a novel non-volatile computer memory developed at Arizona State University. PMC have been identified…
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Related topics
Related topics
12 relations
CMOS
Charge pump
Computer memory
EEPROM
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Broader (1)
Non-volatile memory
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2016
2016
Caractérisation électrique et optimisation technologique des mémoires résistives Conductive Bridge Memory (CBRAM) afin d’optimiser la performance, la vitesse et la fiabilité
Marinela Barci
2016
Corpus ID: 124757218
La technologie Flash arrive a ses limites de miniaturisation. Ainsi, la necessite de nouvelles technologies memoire augmente. Les…
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2015
2015
Investigation of resonance characteristics and effective parameters of a metamaterial structure with split rings
R. Singh
,
N. Kumar
2015
Corpus ID: 55534720
This paper presents a new metamaterial, based on SRR structure and systematically investigate the various properties of the…
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2015
2015
Electrical Characterization and Physical Modeling of novel CBRAM Stacks
A. Belmonte
2015
Corpus ID: 114642087
2015
2015
Logic-in-Memory ( LiM ) with a Non-Volatile Programmable Metallization Cell ( PMC )
Pilin Junsangsri
,
Jie Han
,
F. Lombardi
2015
Corpus ID: 8254272
This paper introduces two new cells for Logic-inMemory (LiM) operation. The first novelty of these cells is the resistive RAM…
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2015
2015
Resistive switching characteristics in TiO 2 -based ReRAM cells with Pt or Ag top electrode
Yutaka Kuriyama
2015
Corpus ID: 114722830
はじめに Metal/Oxide/Metal 積層構造を有する抵抗スイッチング(RS)現象を用いた抵抗変化型メモリ (ReRAM)は次世代不揮発性メモリの一つとして注目されている。遷移金属酸化物として TiO2を用いた ReRAM における RS…
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Review
2014
Review
2014
Sneak paths effects in CBRAM memristive devices arrays for spiking neural networks
David Roclin
,
O. Bichler
,
C. Gamrat
,
Jacques-Olivier Klein
IEEE/ACM International Symposium on Nanoscale…
2014
Corpus ID: 1881079
In this paper, we study the effects of sneak paths and parasitic metal line resistance in arrays of CBRAM memristive devices…
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2013
2013
Simulation Models for Programmable Metallization Cells
D. Oleksy
2013
Corpus ID: 17810737
i ABSTRACT Advances in software and applications continue to demand advances in memory. The ideal memory would be non-volatile…
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2012
2012
Behavior Modeling of Programmable Metallization Cell Using Verilog-A
Darshan A. Dimplu
,
Fei Wang
Ninth International Conference on Information…
2012
Corpus ID: 1597716
Programmable metallization is a promising type of non-volatile memory that displays several advantages over the currently wide…
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2011
2011
A High Performance and Low Power Logic CMOS Compatible Embedded 1Mb CBRAM Non-Volatile Macro
Shane Hollmer
,
Nad E. Gilbert
,
John Dinh
,
Derric Lewis
,
N. Derhacobian
International Memory Workshop
2011
Corpus ID: 39487381
NA
2004
2004
Integration von 1T1R-CBRAM-Speicherzellen
Ulrike Dr. Grüning-von-Schwerin
,
T. Happ
,
C. Pinnow
,
Thomas Röhr
2004
Corpus ID: 191884120
Die Aufgabe, ein Konzept zur Integration von CBRAM-Speicherzellen mit einer 1T1R-CBRAM-Architektur anzugeben, bei der ein…
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