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Programmable metallization cell

Known as: CBRAM, PMC 
The programmable metallization cell, or PMC, is a novel non-volatile computer memory developed at Arizona State University. PMC have been identified… Expand
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Papers overview

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Highly Cited
2012
Highly Cited
2012
Ag/GeS2/W conductive-bridge random access memory (CBRAM) cells are shown to program at room temperature to conductance levels… Expand
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2012
2012
We optimize a 90nm-wide CuTe-based 1T1R CBRAM cell for highly controlled and ultrafast programming by engineering Al2O3… Expand
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Highly Cited
2011
Highly Cited
2011
  • S. Yu, H. Wong
  • IEEE Transactions on Electron Devices
  • 2011
  • Corpus ID: 25481003
A physics-based compact device model is developed for the conducting-bridge random-access memory (CBRAM). By considering the… Expand
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Highly Cited
2011
Highly Cited
2011
This paper introduces a behavior model of a memristive soild-state device for simulation with a simulation program for integrated… Expand
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Highly Cited
2009
Highly Cited
2009
Programmable metallization cell (PMC) memory, also known as conductive bridging RAM (CBRAM), is a resistive-switching memory… Expand
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Highly Cited
2006
Highly Cited
2006
The benefits of copper (Cu) die-side bumps for flip chip application are well known and have been sought for more than a decade… Expand
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Highly Cited
2006
Highly Cited
2006
We describe the materials aspects and electrical characteristics of W-(Cu/WO3)-Cu switching elements. These materials are… Expand
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Highly Cited
2005
Highly Cited
2005
We report on the electrical characterisation of nanoscale conductive bridging memory cells, composed of a thin solid state… Expand
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Highly Cited
2003
Highly Cited
2003
This paper mainly focuses on the development of the NOR flash memory technology, with the aim of describing both the basic… Expand
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Highly Cited
2002
Highly Cited
2002
Abstract We investigate the nature of thin films formed by the photodissolution of Ag into Se-rich Ge–Se glasses for use in… Expand
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