Programmable metallization cell

Known as: CBRAM, PMC 
The programmable metallization cell, or PMC, is a novel non-volatile computer memory developed at Arizona State University. PMC have been identified… (More)
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Papers overview

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2016
2016
This paper introduces two new cells for logic-in-memory (LiM) operation. The first novelty of these cells is the resistive random… (More)
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2015
2015
http://dx.doi.org/10.1016/j.sse.2014.12.019 0038-1101/Published by Elsevier Ltd. ⇑ Corresponding author at: School of Electrical… (More)
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2013
2013
The pyramid structure fabricated with the potassium hydroxide (KOH) anisotropically etched (100) silicon substrate has been… (More)
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2012
2012
Programmable metallization is a promising type of non-volatile memory that displays several advantages over the currently wide… (More)
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2011
2011
The feasibility of a storage element with inherent rectifying or isolation properties for use in passive memory arrays has been… (More)
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2011
2011
Resistive switching in Ni/SiO2/Si programmable metallization cells was investigated. The proposed switching mechanism is the… (More)
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Highly Cited
2009
Highly Cited
2009
Programmable metallization cell (PMC) memory, also known as conductive bridging RAM (CBRAM), is a resistive-switching memory… (More)
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2006
2006
The benefits of copper (Cu) die-side bumps for flip chip application are well known and have been sought for more than a decade… (More)
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2005
2005
Programmable metallization cell (PMC) memory is based on the electrochemical growth and removal of nanoscale metallic pathways in… (More)
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2002
2002
We investigate the nature of thin films formed by the photodissolution of Ag into Se-rich Ge–Se glasses for use in programmable… (More)
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