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Programmable metallization cell

Known as: CBRAM, PMC 
The programmable metallization cell, or PMC, is a novel non-volatile computer memory developed at Arizona State University. PMC have been identified… 
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Papers overview

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Highly Cited
2012
Highly Cited
2012
Ag/GeS2/W conductive-bridge random access memory (CBRAM) cells are shown to program at room temperature to conductance levels… 
Highly Cited
2011
Highly Cited
2011
A physics-based compact device model is developed for the conducting-bridge random-access memory (CBRAM). By considering the… 
Highly Cited
2010
Highly Cited
2010
Today's main stream NVM technologies require operational conditions that are incompatible with modern low voltage logic CMOS… 
Highly Cited
2009
Highly Cited
2009
Programmable metallization cell (PMC) memory, also known as conductive bridging RAM (CBRAM), is a resistive-switching memory… 
Highly Cited
2007
Highly Cited
2007
A 2-Mbit CBRAM (Conductive Bridging Random Access Memory) core has been developed utilizing a 90 nm, VDD=1.5 V process technology… 
Highly Cited
2006
Highly Cited
2006
The benefits of copper (Cu) die-side bumps for flip chip application are well known and have been sought for more than a decade… 
Highly Cited
2006
Highly Cited
2006
We describe the materials aspects and electrical characteristics of W-(Cu/WO3)-Cu switching elements. These materials are… 
Highly Cited
2005
Highly Cited
2005
We report on the electrical characterisation of nanoscale conductive bridging memory cells, composed of a thin solid state… 
Highly Cited
2003
Highly Cited
2003
This paper mainly focuses on the development of the NOR flash memory technology, with the aim of describing both the basic…