Programmable metallization cell
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In this letter, we report the impact of post-oxide deposition annealing on the performance of HfO2-based resistive random access… Expand A physics-based compact device model is developed for the conducting-bridge random-access memory (CBRAM). By considering the… Expand This paper introduces a behavior model of a memristive soild-state device for simulation with a simulation program for integrated… Expand Programmable metallization cell (PMC) memory, also known as conductive bridging RAM (CBRAM), is a resistive-switching memory… Expand A 2-Mbit CBRAM (Conductive Bridging Random Access Memory) core has been developed utilizing a 90 nm, VDD=1.5 V process technology… Expand The benefits of copper (Cu) die-side bumps for flip chip application are well known and have been sought for more than a decade… Expand We describe the materials aspects and electrical characteristics of W-(Cu/WO3)-Cu switching elements. These materials are… Expand We report on the electrical characterisation of nanoscale conductive bridging memory cells, composed of a thin solid state… Expand This paper mainly focuses on the development of the NOR flash memory technology, with the aim of describing both the basic… Expand Abstract In the flip-chip ball grid array (FCBGA) assembly process, no-flow underfill has the advantage over traditional… Expand