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Programmable metallization cell

Known as: CBRAM, PMC 
The programmable metallization cell, or PMC, is a novel non-volatile computer memory developed at Arizona State University. PMC have been identified… 
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Related topics

Related topics

12 relations
CMOSCharge pumpComputer memoryEEPROM

Broader (1)

Non-volatile memory

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Review
2017
Review
2017
A Link Between CBRAM Performances and Material Microscopic Properties Based on Electrical Characterization and Atomistic Simulations
In this paper, we investigate the link between various resistive memory (RRAM) electrical characteristics: endurance, window… 
2016
2016
Effect of Bottom Electrode on Resistive Switching Voltages in Ag-Based Electrochemical Metallization Memory Device
In this study, we fabricated Ag-based electrochemical metallization memory devices which is also called conductive-bridge random… 
2015
2015
Realization of a Conductive Bridging RF Switch Integrated onto Printed Circuit Board
This paper presents a new approach for the realization of RF switches based on the Conductive Bridging Random Access Memory… 
2014
2014
Impact of SET and RESET conditions on CBRAM high temperature data retention
In this paper, we investigate the high temperature behavior of oxide-based conductive bridge memories. A methodology to optimize… 
2013
2013
90nm W\Al2O3\TiW\Cu 1T1R CBRAM cell showing low-power, fast and disturb-free operation
In this paper we demonstrate excellent memory performances of a 90nm CMOS-friendly W\Al2O3\TiW\Cu CBRAM cell integrated in a 1T1R… 
Highly Cited
2013
Highly Cited
2013
A Thermally Stable and High-Performance 90-nm ${\rm Al}_{2}{\rm O}_{3}\backslash{\rm Cu}$-Based 1T1R CBRAM Cell
In this paper, we optimize the stack of a 90-nm CMOS-friendly W\Al<sub>2</sub>O<sub>3</sub>\Cu conductive-bridging random access… 
2012
2012
Field-driven ultrafast sub-ns programming in W\Al2O3\Ti\CuTe-based 1T1R CBRAM system
We optimize a 90nm-wide CuTe-based 1T1R CBRAM cell for highly controlled and ultrafast programming by engineering Al2O3… 
2009
2009
Improvement of CBRAM Resistance Window by Scaling Down Electrode Size in Pure-GeTe Film
TaN-pure-GeTe-Cu bipolar switching devices which can be adaptable to semiconductor processes were fabricated as a function of top… 
Highly Cited
2005
Highly Cited
2005
Programmable metallization cell memory based on Ag-Ge-S and Cu-Ge-S solid electrolytes
Programmable metallization cell (PMC) memory is based on the electrochemical growth and removal of nanoscale metallic pathways in… 
2003
2003
Morphology of electrochemically grown silver deposits on silver-saturated Ge-Se thin films
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