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Programmable metallization cell

Known as: CBRAM, PMC 
The programmable metallization cell, or PMC, is a novel non-volatile computer memory developed at Arizona State University. PMC have been identified… Expand
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Related topics

Related topics

12 relations
CMOSCharge pumpComputer memoryEEPROM
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Broader (1)

Non-volatile memory

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2015
2015
Impact of Post-Oxide Deposition Annealing on Resistive Switching in HfO2-Based Oxide RRAM and Conductive-Bridge RAM Devices
In this letter, we report the impact of post-oxide deposition annealing on the performance of HfO2-based resistive random access… Expand
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Highly Cited
2011
Highly Cited
2011
Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM)
A physics-based compact device model is developed for the conducting-bridge random-access memory (CBRAM). By considering the… Expand
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Highly Cited
2011
Highly Cited
2011
A Memristor SPICE Implementation and a New Approach for Magnetic Flux-Controlled Memristor Modeling
This paper introduces a behavior model of a memristive soild-state device for simulation with a simulation program for integrated… Expand
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Highly Cited
2009
Highly Cited
2009
Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory
Programmable metallization cell (PMC) memory, also known as conductive bridging RAM (CBRAM), is a resistive-switching memory… Expand
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Highly Cited
2007
Highly Cited
2007
A Nonvolatile 2-Mbit CBRAM Memory Core Featuring Advanced Read and Program Control
A 2-Mbit CBRAM (Conductive Bridging Random Access Memory) core has been developed utilizing a 90 nm, VDD=1.5 V process technology… Expand
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Highly Cited
2006
Highly Cited
2006
Copper die bumps (first level interconnect) and low-K dielectrics in 65nm high volume manufacturing
The benefits of copper (Cu) die-side bumps for flip chip application are well known and have been sought for more than a decade… Expand
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Highly Cited
2006
Highly Cited
2006
A Low-Power Nonvolatile Switching Element Based on Copper-Tungsten Oxide Solid Electrolyte
We describe the materials aspects and electrical characteristics of W-(Cu/WO3)-Cu switching elements. These materials are… Expand
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Highly Cited
2005
Highly Cited
2005
Conductive bridging RAM (CBRAM): an emerging non-volatile memory technology scalable to sub 20nm
We report on the electrical characterisation of nanoscale conductive bridging memory cells, composed of a thin solid state… Expand
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Highly Cited
2003
Highly Cited
2003
Introduction to flash memory
This paper mainly focuses on the development of the NOR flash memory technology, with the aim of describing both the basic… Expand
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Highly Cited
2003
Highly Cited
2003
Reliability assessment and hygroswelling modeling of FCBGA with no-flow underfill
Abstract In the flip-chip ball grid array (FCBGA) assembly process, no-flow underfill has the advantage over traditional… Expand
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