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Programmable metallization cell

Known as: CBRAM, PMC 
The programmable metallization cell, or PMC, is a novel non-volatile computer memory developed at Arizona State University. PMC have been identified… 
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Related topics

Related topics

12 relations
CMOSCharge pumpComputer memoryEEPROM

Broader (1)

Non-volatile memory

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2012
Highly Cited
2012
Quantized Conductance in $\hbox{Ag/GeS}_{2}/\hbox{W}$ Conductive-Bridge Memory Cells
Ag/GeS2/W conductive-bridge random access memory (CBRAM) cells are shown to program at room temperature to conductance levels… 
Highly Cited
2011
Highly Cited
2011
Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM)
A physics-based compact device model is developed for the conducting-bridge random-access memory (CBRAM). By considering the… 
Highly Cited
2010
Highly Cited
2010
Demonstration of Conductive Bridging Random Access Memory (CBRAM) in Logic CMOS Process
Today's main stream NVM technologies require operational conditions that are incompatible with modern low voltage logic CMOS… 
Highly Cited
2009
Highly Cited
2009
Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory
Programmable metallization cell (PMC) memory, also known as conductive bridging RAM (CBRAM), is a resistive-switching memory… 
Highly Cited
2007
Highly Cited
2007
A Nonvolatile 2-Mbit CBRAM Memory Core Featuring Advanced Read and Program Control
A 2-Mbit CBRAM (Conductive Bridging Random Access Memory) core has been developed utilizing a 90 nm, VDD=1.5 V process technology… 
Highly Cited
2006
Highly Cited
2006
Copper die bumps (first level interconnect) and low-K dielectrics in 65nm high volume manufacturing
The benefits of copper (Cu) die-side bumps for flip chip application are well known and have been sought for more than a decade… 
Highly Cited
2006
Highly Cited
2006
A Low-Power Nonvolatile Switching Element Based on Copper-Tungsten Oxide Solid Electrolyte
We describe the materials aspects and electrical characteristics of W-(Cu/WO3)-Cu switching elements. These materials are… 
Highly Cited
2005
Highly Cited
2005
Conductive bridging RAM (CBRAM): an emerging non-volatile memory technology scalable to sub 20nm
We report on the electrical characterisation of nanoscale conductive bridging memory cells, composed of a thin solid state… 
Highly Cited
2003
Highly Cited
2003
Introduction to flash memory
This paper mainly focuses on the development of the NOR flash memory technology, with the aim of describing both the basic… 
Highly Cited
2003
Highly Cited
2003
Information storage using nanoscale electrodeposition of metal in solid electrolytes
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