Skip to search formSkip to main content
You are currently offline. Some features of the site may not work correctly.

Programmable metallization cell

Known as: CBRAM, PMC 
The programmable metallization cell, or PMC, is a novel non-volatile computer memory developed at Arizona State University. PMC have been identified… Expand
Wikipedia

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2015
2015
In this letter, we report the impact of post-oxide deposition annealing on the performance of HfO2-based resistive random access… Expand
  • figure 1
  • figure 2
  • figure 3
  • figure 4
  • figure 5
Highly Cited
2011
Highly Cited
2011
A physics-based compact device model is developed for the conducting-bridge random-access memory (CBRAM). By considering the… Expand
  • figure 1
  • figure 2
  • table I
  • figure 3
  • figure 4
Highly Cited
2011
Highly Cited
2011
This paper introduces a behavior model of a memristive soild-state device for simulation with a simulation program for integrated… Expand
  • figure 1
  • figure 2
  • figure 3
  • figure 4
  • figure 6
Highly Cited
2009
Highly Cited
2009
Programmable metallization cell (PMC) memory, also known as conductive bridging RAM (CBRAM), is a resistive-switching memory… Expand
  • figure 1
  • figure 3
  • figure 2
  • figure 6
  • figure 4
Highly Cited
2007
Highly Cited
2007
A 2-Mbit CBRAM (Conductive Bridging Random Access Memory) core has been developed utilizing a 90 nm, VDD=1.5 V process technology… Expand
  • figure 1
  • figure 2
  • figure 4
  • figure 3
  • figure 5
Highly Cited
2006
Highly Cited
2006
The benefits of copper (Cu) die-side bumps for flip chip application are well known and have been sought for more than a decade… Expand
  • figure 1
  • figure 3
  • figure 2
  • figure 4
  • figure 5
Highly Cited
2006
Highly Cited
2006
We describe the materials aspects and electrical characteristics of W-(Cu/WO3)-Cu switching elements. These materials are… Expand
  • figure 1
  • figure 2
  • figure 3
  • figure 4
  • figure 5
Highly Cited
2005
Highly Cited
2005
We report on the electrical characterisation of nanoscale conductive bridging memory cells, composed of a thin solid state… Expand
  • figure 1
  • figure 2
  • figure 2
  • figure 4
  • figure 3
Highly Cited
2003
Highly Cited
2003
This paper mainly focuses on the development of the NOR flash memory technology, with the aim of describing both the basic… Expand
  • figure 1
  • figure 4
  • figure 2
  • figure 3
  • figure 5
Highly Cited
2003
Highly Cited
2003
Abstract In the flip-chip ball grid array (FCBGA) assembly process, no-flow underfill has the advantage over traditional… Expand