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Phase-change memory

Known as: Phase-change RAM, PCM (disambiguation), OUM 
Phase-change memory (also known as PCM, PCME, PRAM, PCRAM, Ovonic Unified Memory, Chalcogenide RAM and C-RAM) is a type of non-volatile random-access… 
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Related topics

Related topics

24 relations
3D XPointCPU cacheCharge pumpCharge trap flash

Broader (1)

Non-volatile memory

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2015
2015
Nature of Interaction between Semiconducting Nanostructures and Biomolecules: Chalcogenide QDs and BNNT with DNA Molecules
Interactions of DNA oligomers with two categories of semiconducting nanostructures—chalcogenide quantum dots (QDs) and boron… 
2011
2011
Persistent , Protected and Cached : Building Blocks for Main Memory Data Stores
This paper looks at systems design for consistent, durable, and safe memory management for future byte-addressable non-volatile… 
2008
2008
Nanotube-based data storage devices
2008
2008
Verilog-A model for phase change memory simulation
A fully-customized phase change memory (PCM) model for circuit simulation has been developed and implemented in Verilog-A… 
2008
2008
Mechanisms of retention loss in Ge2Sb2Te5-based Phase-Change Memory
  • Y. ShihJ.Y. Wu C. Lam
  • IEEE International Electron Devices Meeting
  • 2008
  • Corpus ID: 41985069
Data retention loss from the amorphous (RESET) state over time in Phase-Change Memory cells is associated with spontaneous… 
2007
2007
An Integrated Phase Change Memory Cell With Ge Nanowire Diode For Cross-Point Memory
We demonstrate a novel phase change memory cell utilizing doped Ge nanowire pn-junction diode both as a bottom electrode and a… 
2007
2007
Mechanism of Threshold Switching in Chalcogenide Phase Change Memory Devices
Chalcogenide-based Phase Change Memory (PCM) utilizes electrically initiated, reversible rapid amorphous-to-crystalline phase… 
2006
2006
Electrical characterization of anomalous cells in phase change memory arrays
In order to integrate phase change memory (PCM) devices into large and yielding arrays, a programming window between the two… 
2005
2005
Phase change memory materials
An optical or electronic phase change memory material comprises gallium, a lanthanide, and a chalcogenide including compounds of… 
1996
1996
Growth of optical superlattice LiNbO3 with different modulating periods and its applications in second‐harmonic generation
Optical superlattice LiNbO3 crystals with a modulation period number over 200 and a modulation period from 2.0 to over 15.0 μm… 
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