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Monolayer doping

Monolayer doping (MLD) is a well controlled, wafer-scale surface doping technique first developed at the University of California, Berkeley, in 2007… 
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Doping (semiconductor)Semiconductor

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Semiconductor device fabrication

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Review
2018
Review
2018
Chapter 7 Dendrimers as Dopant Atom Carriers
Properties of modern semiconducting transistors and future electron or quantum devices are essentially determined by single… 
2018
2018
Highly Reliable Ferroelectric Hf0.5Zr0.5O2 Film with Al Nanoclusters Embedded by Novel Sub-Monolayer Doping Technique
Highly reliable ferroelectric (FE) Hf0.5Zr0.5O2 (HZO) film with Al nanoclusters embedded by sub-monolayer doping technique is… 
2017
2017
TRPL Analysis of Intentionally N+B-Doped n -type 4H-SiC Epilayers
電中研 ,産総研 , 富士電機 3 楊 安麗 ,宮澤 哲哉 , 俵 武志 , 村田 晃一 , 土田 秀一 1 CRIEPI , AIST , Fuji Electric Co., Ltd., A. Yang, T. Miyazawa, T. Tawara… 
2015
2015
300mm wafer level sulfur monolayer doping for III–V materials
We have demonstrated sulfur monolayer doping (MLD) of In(53%)GaAs on III-V buffer/Si substrate at 300mm wafer scale and obtained… 
2014
2014
P2S5/(NH4)2Sx-Based Sulfur Monolayer Doping for Source/Drain Extensions in n-Channel InGaAs FETs
Ultrashallow junctions that are abrupt and have low resistance are needed for the source/drain extensions (SDEs) of MOSFETs at… 
Highly Cited
2011
Highly Cited
2011
300mm FinFET results utilizing conformal, damage free, ultra shallow junctions (Xj∼5nm) formed with molecular monolayer doping technique
We demonstrate for the first time, a 20nm FinFET using a new, conformal, and damage-free monolayer doping technique. Unlike… 
2011
2011
Application of advanced Planetary Reactor® technology for production of III-V compound semiconductor materials for CPV on 6″ Ge wafers
The success of III-V concentrator photovoltaic devices is closely linked to the productivity of manufacturing technology for… 
2009
2009
Monolayer doping and diameter-dependent electron mobility assessment of nanowires
Sub-5nm ultrashallow junctions in planar and non-planar semiconductors are formed by use of a molecular monolayer doping method… 
1999
1999
Role of p-Doping Profile and Regrowth on the Static Characteristics of 1 . 3m MQW InGaAsP – InP Lasers : Experiment and Modeling
In this paper, we study both experimentally and theoretically how the change of the p-doping profile, particularly the p-i… 
1992
1992
Band offsets in heavily doped p type GeSi/Si(100) strained layers: Applications to design of Long Wave-length InfraRed (LWIR) detectors
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