FAQ

Metal-induced crystallization

Known as: Metal-induced crystallisation, Metal-induced lateral crystallisation, Metal-induced lateral crystallization 
Metal-induced crystallization (MIC) is a method by which amorphous silicon, or a-Si, can be turned into polycrystalline silicon at relatively low… (More)
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Topic mentions per year

Topic mentions per year

1997-2012
0119972012

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1 relation

Broader (1)

Semiconductor device fabrication

Related mentions per year

Related mentions per year

1937-2018
19401960198020002020
Metal-induced crystallization
Semiconductor device fabrication

Papers overview

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2012
2012
Effect of an Oxide Cap Layer and Fluorine Implantation on the Metal-Induced Lateral Crystallization of Amorphous Silicon
In this work, we investigate the effect of oxide cap layer on the metal-induced lateral crystallization (MILC) of amorphous… (More)
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2010
2010
Effect of oxide layer on Al-induced crystallization of amorphous Si<inf>1&#x2212;x</inf>Ge<inf>x</inf> thin films
Metal-induced crystallization (MIC) of amorphous silicon-germanium (a-Si<inf>1&#x2212;x</inf>Ge<inf>x</inf>) thin films at lower… (More)
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2003
2003
Metal-induced lateral crystallization of a-Si thin films by Ni-Co alloys and the electrical properties of poly-Si TFTs
We have introduced a new process in metal-induced lateral crystallization (MILC). By adding Co to the Ni-MILC process, the… (More)
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1998
1998
The effects of MIC/MILC interface on the performance of MILC-TFTs
High mobility, low temperature polycrystalline silicon thin film transistors (poly-Si TFTs) potentially enable the integration of… (More)
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1997
1997
A Novel Technique For 3-d Integration: Ge-seeded Laterally Crystallized TFTs
With increasing chip size and complexity, interconnect delays are becoming limiting factors in increasing performance. 3-D device… (More)
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