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In this work, we investigate the effect of oxide cap layer on the metal-induced lateral crystallization (MILC) of amorphous… (More)
Metal-induced crystallization (MIC) of amorphous silicon-germanium (a-Si<inf>1−x</inf>Ge<inf>x</inf>) thin films at lower… (More)
- IEEE Electron Device Letters
We have introduced a new process in metal-induced lateral crystallization (MILC). By adding Co to the Ni-MILC process, the… (More)
High mobility, low temperature polycrystalline silicon thin film transistors (poly-Si TFTs) potentially enable the integration of… (More)
- 1997 Symposium on VLSI Technology
With increasing chip size and complexity, interconnect delays are becoming limiting factors in increasing performance. 3-D device… (More)