FAQ

Metal–semiconductor junction

Known as: Metal-semiconductor junction, Junction, Schottky-Mott rule 
In solid-state physics, a metal–semiconductor (M–S) junction is a type of junction in which a metal comes in close contact with a semiconductor… (More)
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Topic mentions per year

Topic mentions per year

1977-2017
0204019772017

Related topics

Related topics

17 relations
Anderson's ruleBand bendingCopper(I) oxideDepletion region
(More)

Related mentions per year

Related mentions per year

1936-2018
19401960198020002020
Metal–semiconductor junction
Transistor
Semiconductor
Diode
Depletion region
Heterojunction

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2014
2014
Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors
Among various 2D materials, monolayer transition-metal dichalcogenide (mTMD) semiconductors with intrinsic band gaps (1–2 eV) are… (More)
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2013
2013
Metal-semiconductor-metal photodetectors based on graphene/p-type silicon Schottky junctions
silicon Schottky junctions Yanbin An, Ashkan Behnam, Eric Pop, and Ant Ural Department of Electrical and Computer Engineering… (More)
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2012
2012
Negative resistance of rectifying metal-semiconductor junction
It was shown that in the region of direct current with U<sub>f</sub>>;qφ<sub>b</sub> there is the negative resistance part at… (More)
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2012
2012
I-V Characteristics of the Metal-Semiconductor Junction
The electrical characteristic test of nanowires is important in nano-materials research. The metal-semiconductor junction that is… (More)
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2008
2008
Ageing of semiconductor single crystals and metal-semiconductor junctions
CdTe radiation detectors resistance were periodically measured during long time interval with an applied voltage in range U=1 V… (More)
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2003
2003
GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts
Nitride-based metal-semiconductor-metal (MSM) photodetectors (PDs) with low-temperature (LT) gallium nitride (GaN) cap layers and… (More)
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Highly Cited
2003
Highly Cited
2003
Fermi level pinning at the polySi/metal oxide interface
We report here for the first time that Fermi pinning at the polySi/metal oxide interface causes high threshold voltages in MOSFET… (More)
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2002
2002
ZnSTeSe metal-semiconductor-metal photodetectors
High-quality quaternary ZnSTeSe epitaxial layers were successfully grown by molecular beam epitaxy (MBE). It was found that a ZnS… (More)
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2001
2001
GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts
Indium-tin-oxide (ITO) layers were deposited onto n-GaN films and/or glass substrates by electron-beam evaporation. With proper… (More)
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1997
1997
Carbon Nanotube “T Junctions”: Nanoscale Metal-Semiconductor-Metal Contact Devices
Stable “T junctions” of single-walled carbon nanotubes forming one of the smallest prototypes of microscopic metal-semiconductor… (More)
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