Skip to search formSkip to main contentSkip to account menu

Metal–semiconductor junction

Known as: Metal-semiconductor junction, Junction, Schottky-Mott rule 
In solid-state physics, a metal–semiconductor (M–S) junction is a type of junction in which a metal comes in close contact with a semiconductor… 
Wikipedia (opens in a new tab)

Related topics

Related topics

17 relations
Anderson's ruleBand bendingCopper(I) oxideDepletion region

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2009
Highly Cited
2009
Reconstructions and origin of surface states on AlN polar and nonpolar surfaces
The AlN (0001), $(000\overline{1})$, $(10\overline{1}0)$, and $(11\overline{2}0)$ surfaces and their electronic structures are… 
Highly Cited
2007
Highly Cited
2007
Optimized Design of Plasmonic MSM Photodetector
We present an optimized design for a plasmonic metal-semiconductor-metal photodetector with interdigitated electrodes with… 
Highly Cited
2005
Highly Cited
2005
Numerical modeling and electromagnetic resonant modes in complex grating structures and optoelectronic device applications
An extended surface impedance boundary condition algorithm is developed that allows for the optical properties of a wide variety… 
Highly Cited
2004
Highly Cited
2004
Monolithic Integration of Carbon Nanotube Devices with Silicon MOS Technology
An integrated circuit combining single-walled carbon nanotube (SWNT) devices with n-channel metal oxide semiconductor (NMOS… 
Highly Cited
2004
Highly Cited
2004
Fermi pinning-induced thermal instability of metal-gate work functions
The dependence of the metal-gate work function on the annealing temperature is experimentally studied. We observe increased Fermi… 
2002
2002
Ultrahigh-power-bandwidth product and nonlinear photoconductance performances of low-temperature-grown GaAs-based metal-semiconductor-metal traveling-wave photodetectors
Maximum-output-power and bandwidth performances are usually two tradeoff parameters in the design of high-speed photodetectors… 
Highly Cited
1993
Highly Cited
1993
Silicide/strained Si/sub 1-x/Ge/sub x/ Schottky-barrier infrared detectors
By employing a thin silicon sacrificial cap layer for silicide formation, the authors successfully demonstrated Pd/sub 2/Si… 
Highly Cited
1991
Highly Cited
1991
A simple high-speed Si Schottky photodiode
Design, fabrication, and UV-heterodyne characterization of Ni-Si-Ni metal-semiconductor-metal (MSM) Schottky barrier… 
Highly Cited
1988
Highly Cited
1988
An investigation of the optoelectronic response of GaAs/InGaAs MSM photodetectors
It is shown that the planar metal-semiconductor-metal photodetectors on InGaAs/InP with a strained GaAs top layer are promising… 
1987
1987
GaAs MESFET interface considerations
Various properties of GaAs MESFET's are discussed in terms of the basic physics of interfaces and deep levels. Fermi-level… 
By clicking accept or continuing to use the site, you agree to the terms outlined in our Privacy Policy (opens in a new tab), Terms of Service (opens in a new tab), and Dataset License (opens in a new tab)