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Metal–semiconductor junction

Known as: Metal-semiconductor junction, Junction, Schottky-Mott rule 
In solid-state physics, a metal–semiconductor (M–S) junction is a type of junction in which a metal comes in close contact with a semiconductor… Expand
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Related topics

Related topics

17 relations
Anderson's ruleBand bendingCopper(I) oxideDepletion region
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Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2014
Highly Cited
2014
Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors
Modern electronics rely on semiconductors such as silicon. Researchers show how a new class of semiconductors---monolayer… Expand
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Highly Cited
2013
Highly Cited
2013
Metal-semiconductor-metal photodetectors based on graphene/p-type silicon Schottky junctions
Metal-semiconductor-metal (MSM) photodetectors based on graphene/p-type Si Schottky junctions are fabricated and characterized… Expand
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Highly Cited
2013
Highly Cited
2013
A wide-bandgap metal-semiconductor-metal nanostructure made entirely from graphene
The electronic properties of graphene are spatially controlled from metallic to semiconducting by patterning steps into the… Expand
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2013
2013
Silicon nanowire network metal-semiconductor-metal photodetectors
We report on the fabrication and characterization of solution-processed, highly flexible, silicon nanowire network based metal… Expand
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Highly Cited
2009
Highly Cited
2009
P-type doping of organic wide band gap materials by transition metal oxides: A case-study on Molybdenum trioxide
A study on p-doping of organic wide band gap materials with Molybdenum trioxide using current transport measurements, ultraviolet… Expand
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Highly Cited
2009
Highly Cited
2009
Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning
The passivation of interface states remains an important problem for III-V based semiconductor devices. The role of the most… Expand
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Highly Cited
2008
Highly Cited
2008
Quantitative Evaluation of Statistical Variability Sources in a 45-nm Technological Node LP N-MOSFET
A quantitative evaluation of the contributions of different sources of statistical variability, including the contribution from… Expand
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Highly Cited
1999
Highly Cited
1999
Carbon nanotube intramolecular junctions
The ultimate device miniaturization would be to use individual molecules as functional devices. Single-wall carbon nanotubes… Expand
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1997
1997
Carbon Nanotube "T Junctions": Nanoscale Metal-Semiconductor-Metal Contact Devices
Stable ``T junctions'' of single-walled carbon nanotubes forming one of the smallest prototypes of microscopic metal… Expand
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1980
1980
The concept of Fermi level pinning at semiconductor/liquid junctions. Consequences for energy conversion efficiency and selection of useful solution redox couples in solar devices
Fermi level pinning refers to a situation where the band bending in a semiconductor contacting a metal is essentially independent… Expand
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