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Memory cell (binary)
Known as:
1 bit memory cell
, Memory cell
, DRAM cell
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The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary…
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Related topics
Related topics
31 relations
Bubble memory
CARDboard Illustrative Aid to Computation
CPU cache
Combinational logic
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Broader (2)
Digital electronics
Electronic engineering
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2014
2014
Semiconductor Memories Technology, Testing And Reliability
Ashok Sharma
2014
Corpus ID: 107099648
Semiconductor Memories provides in-depth coverage in the areas of design for testing, fault tolerance, failure modes and…
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2012
2012
On the Capacity and Programming of Flash Memories
Anxiao Jiang
,
Hao Li
,
Jehoshua Bruck
IEEE Transactions on Information Theory
2012
Corpus ID: 10986800
Flash memories are currently the most widely used type of nonvolatile memories. A flash memory consists of floating-gate cells as…
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2002
2002
PHINES: a novel low power program/erase, small pitch, 2-bit per cell flash memory
Chih-Chieh Yeh
,
W. Tsai
,
+6 authors
Chih-Yuan Lu
Digest. International Electron Devices Meeting,
2002
Corpus ID: 40695304
A novel flash memory cell named PHINES (Programming by hot Hole Injection Nitride Electron Storage) is proposed. PHINES uses a…
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Highly Cited
1998
Highly Cited
1998
A comparative study of single-electron memories
C. Wasshuber
,
H. Kosina
,
S. Selberherr
1998
Corpus ID: 3066703
We study different memory cell designs and compare their advantages and disadvantages from an engineering point of view. We look…
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1987
1987
The twin-port memory cell
K. O'Connor
1987
Corpus ID: 60800243
A novel full-CMOS six-transistor memory cell that provides uncontested and overlapped two-port read accesses to one-cell, and…
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1987
1987
GRADUATION: SOME EXPERIMENTS WITH KERNEL METHODS
D. S. F. Bloomfield
,
S. Haberman
1987
Corpus ID: 122611362
Highly Cited
1985
Highly Cited
1985
An 8-kbit content-addressable and reentrant memory
H. Kadota
,
J. Miyake
,
Y. Nishimichi
,
H. Kudoh
,
K. Kagawa
IEEE Journal of Solid-State Circuits
1985
Corpus ID: 34741745
A 256-word/spl times/32-bit associated memory, referred to as the Content Addressable and Reentrant Memory (CARM), with a 100-ns…
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Highly Cited
1982
Highly Cited
1982
The Case for Idealism
H. Kincaid
,
John Foster
1982
Corpus ID: 146694969
1981
1981
A fault-tolerant 30 ns/375 mW 16Kx1 NMOS static RAM
K. Hardee
,
R. Sud
IEEE Journal of Solid-State Circuits
1981
Corpus ID: 45968263
A fault-tolerant 30950 mil/SUP 2/ (19.9 mm/SUP 2/) 16K/spl times/1 static MOS RAM has been fabricated with a single polysilicon E…
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1973
1973
Injection-coupled memory: A high-density static bipolar memory
S. Wiedmann
1973
Corpus ID: 61166407
The design of a new static bipolar memory comparable with dynamic FET storages in density, but superior in performance and power…
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