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Lattice scattering

Lattice scattering is the scattering of ions by interaction with atoms in a lattice. This effect can be qualitatively understood as phonons colliding… (More)
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Topic mentions per year

Topic mentions per year

1987-2016
01219872016

Related topics

Related topics

3 relations
Hot-carrier injectionIonized impurity scattering

Broader (1)

Quantum mechanics

Related mentions per year

Related mentions per year

1938-2018
19401960198020002020
Lattice scattering
Quantum mechanics
Hot-carrier injection
Ionized impurity scattering

Papers overview

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2013
2013
Parametric Study of Nanoscale Radiative Properties of Doped Silicon Multilayer Structures
Thin film coatings play an important role in the semiconductor industries and micro electromechanical and nano electromechanical… (More)
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2012
2012
Study of transient response characteristics of electrons in GaN by Monte Carlo method
The authors have theoretically investigated transient response of electrons in bulk Wurtzite GaN at 300K using one particle monte… (More)
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2010
2010
Investigating scattering effects in nano-scale double gate MOSFETs by using direct solution of the Boltzmann transport equation and Poisson-Schrodinger equation method
The lattice scattering is carefully involved in a direct solution of the BTE and Poisson-Schrodinger equation method. Simulating… (More)
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2009
2009
The scattering of electromagnetic waves on plane lattice of dielectric resonators
It's given investigation results of scattering electromagnetic waves on square lattices of dielectric resonators (DR). Every DR… (More)
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2006
2006
Negative differential conductance observed in electron field emission from band gap modulated amorphous-carbon nanolayers
Amorphous-carbon a-C -based quantum confined structures were synthesized by pulsed laser deposition. In these structures… (More)
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2004
2004
Spin relaxation in InSb and InAs by 1- and 2-colour spectroscopy with free electron and solid state lasers
We report time-resolved measurement of spin lifetimes in both bulk and quantum well narrow gap semiconductors (NGSs) at 300K. We… (More)
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2000
2000
Alloy scattering limitation on the mobility of holes in p-type GaAs1-xSbx
The hole mobilities in the GaAs1-xSbx system is been investigated for 0.0 ≤ x ≤ 1.0. Undoped room temperature mobilities are used… (More)
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1996
1996
Thermoelectric power in disordered mixed crystals
In disordered mixed crystals the effect of alloy scattering is known to be of significant importance in comparison with that of… (More)
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1992
1992
A mobility model including the screening effect in MOS inversion layer
Abstruct-We propose a new mobility model for MOSFET device simulation. Our model is the first one that is not only applicable to… (More)
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1987
1987
MOSFET behavior and circuit considerations for analog applications at 77 K
We present an investigation into the behavior of silicon MOS transistors and analog circuits operated at liquid-nitrogen… (More)
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