Skip to search form
Skip to main content
Skip to account menu
Semantic Scholar
Semantic Scholar's Logo
Search 218,250,718 papers from all fields of science
Search
Sign In
Create Free Account
Ionized impurity scattering
In quantum mechanics, ionized impurity scattering is the scattering of charge carriers by ionization in the lattice. The most primitive models can be…
Expand
Wikipedia
(opens in a new tab)
Create Alert
Alert
Related topics
Related topics
4 relations
Classical and quantum conductivity
Electron mobility
Lattice scattering
Quantum mechanics
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2018
2018
High thermoelectric efficiency in monolayer PbI2 from 300 K to 900 K
Bo Peng
,
H. Mei
,
+6 authors
Heyuan Zhu
Inorganic Chemistry Frontiers
2018
Corpus ID: 119242650
By using a first-principles approach, monolayer PbI2 is found to have great potential in thermoelectric applications.
2018
2018
Doubling the ZT record of TiS2-based thermoelectrics by incorporation of ionized impurity scattering
Yifeng Wang
,
Lin Pan
,
+7 authors
Chunhua Lu
2018
Corpus ID: 139487423
1T-type TiS2 has been recognized as a promising environmentally friendly thermoelectric material with a record ZT of around 0.4…
Expand
2013
2013
Enhanced ionized impurity scattering in nanowires
Jh Oh
,
Seok-Hee Lee
,
M. Shin
2013
Corpus ID: 55617057
The electronic resistivity in silicon nanowires is investigated by taking into account scattering as well as the donor…
Expand
2011
2011
LOW-DIMENSIONAL AND DISORDERED SYSTEMS Superfluidity of electron-hole pairs in randomly inhomogeneous bilayer systems
A. Bezuglyj
,
S. I. Shevchenko
2011
Corpus ID: 117612425
In bilayer systems, electron-hole (e–h) pairs with spatially separated components can exhibit a transition to a superfluid state…
Expand
2010
2010
Variability in Si Nanowire MOSFETs Due to the Combined Effect of Interface Roughness and Random Dopants: A Fully Three-Dimensional NEGF Simulation Study
A. Martinez
,
N. Seoane
,
A. Brown
,
J. Barker
,
A. Asenov
IEEE Transactions on Electron Devices
2010
Corpus ID: 8520150
In this paper, we study the impact of surface roughness and its combination with random discrete dopants on the current…
Expand
Highly Cited
2008
Highly Cited
2008
Carrier transport in polycrystalline transparent conductive oxides: A comparative study of zinc oxide and indium oxide
K. Ellmer
,
R. Mientus
2008
Corpus ID: 3993556
2006
2006
Carrier compensation and scattering mechanisms in Si-doped InAsyP1−y layers grown on InP substrates using intermediate InAsyP1−y step-graded buffers
M. Hudait
,
Y. Lin
,
P. Sinha
,
J. Lindemuth
,
S. Ringel
2006
Corpus ID: 56243136
Electronic transport properties of strain-relaxed Si-doped InAsyP1−y layers with arsenic mole fractions between y=0.05 and y=0.50…
Expand
1998
1998
An Improved Ionized Impurity Scattering Model for Monte Carlo Calculations
G. Kaiblinger-Grujin
,
H. Kosina
VLSI design (Print)
1998
Corpus ID: 51955035
The well known Brooks-Herring (BH) formula for charged-impurity (CI) scattering overestimates the mobility of electrons in highly…
Expand
1996
1996
Neutral impurity scattering in semiconductors
B. Alkan
1996
Corpus ID: 59323119
SummaryApplying the correlation function technique, a temperature-independent mobility μn has been obtained and it is shown that…
Expand
1992
1992
Quantum- and transport electron mobility in the individual subbands of a two-dimensional electron gas in Si-δ-doped GaAs
P. Koenraad
,
B. V. Hest
,
+4 authors
J. Wolter
1992
Corpus ID: 51778867
By clicking accept or continuing to use the site, you agree to the terms outlined in our
Privacy Policy
(opens in a new tab)
,
Terms of Service
(opens in a new tab)
, and
Dataset License
(opens in a new tab)
ACCEPT & CONTINUE