LDMOS

LDMOS (laterally diffused metal oxide semiconductor) transistors are used in microwave/RF power amplifiers. These transistors are often fabricated on… (More)
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Papers overview

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2013
2013
Novel Interdigitated LDMOS is experimented resulting in best in class R<sub>SP</sub>-BV<sub>DSS</sub> performance (21.8mΩ-mm<sup… (More)
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2012
2012
We show the status of laterally diffused metal-oxide-semiconductor (LDMOS) technology, which has been the device of choice for RF… (More)
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2010
2010
A band-reconfigurable LDMOS high power amplifier (PA) with state-of-the-art performance is presented. The frequency… (More)
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Highly Cited
2008
Highly Cited
2008
This paper presents a single-chip ER circuit for cellular applications. It includes a high-band PA and its switched-mode supply… (More)
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2007
2007
This paper presents a comprehensive yet physical model for hot carrier degradation in LDMOS transistors. The only model input… (More)
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2006
2006
A high performance W-CDMA base station power amplifier is presented, which uses an envelope tracking bias system along with an… (More)
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2006
2006
The surface-potential-based compact transistor model, MOS Model 20 (MM20), has been extended with a quasi-saturation, an effect… (More)
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2005
2005
In this paper, a surface potential-based compact model is described for high-voltage LDMOS transistors. This model combines the… (More)
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1999
1999
This paper deals with the measurement and prediction of the SOA boundary and the accompanying device physics. Results are given… (More)
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1997
1997
This paper provides a physical basis for the experimentally determined hot-electron-limited safe operating area of submicrometer… (More)
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