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LDMOS

LDMOS (laterally diffused metal oxide semiconductor) transistors are used in microwave/RF power amplifiers. These transistors are often fabricated on… 
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Related topics

Related topics

9 relations
AmpleonBCDMOSDoherty amplifierIntegrated circuit

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2010
2010
Active Harmonic Load-Pull With Realistic Wideband Communications Signals
A new wideband open-loop active harmonic load–pull measurement approach is presented. The proposed method is based on wideband… 
2009
2009
A 2.4-GHz 24-dBm SOI CMOS Power Amplifier With Fully Integrated Reconfigurable Output Matching Network
In this paper, the potential of load adaptation for enhanced backoff efficiency in RF power amplifiers (PAs) has been… 
2007
2007
Envelope tracking power amplifier with static predistortion linearization
An efficiency enhanced power amplifier is presented. The amplifier uses envelope tracking (ET) technique and static predistortion… 
2007
2007
Development of GaN HEMT based High Power High Efficiency Distributed Power Amplifier for Military Applications
Implementing wide bandgap GaN HEMT device into broadband distributed power amplifier creates a tremendous opportunity for RF… 
2007
2007
Superjunction Power LDMOS on Partial SOI Platform
Superjunction power LDMOS device implemented on the bulk Si substrate suffers from the substrate-assisted depletion (SAD) effect… 
Review
2007
Review
2007
Design for Reliability: The RF Power LDMOSFET
The design of lateral diffused MOSFETs operating under continuous peak power in RF communication applications is one of the most… 
Highly Cited
2005
Highly Cited
2005
A Rugged LDMOS for LBC5 Technology
This paper presents a new method of enhancing the SOA of n-channel Ldmos transistors. Attention is focused on those applications… 
2005
2005
Simulation on the effect of non-uniform strain from the passivation layer on AlGaN/GaN HEMT
2000
2000
Digital Predistortion Techniques for Rf Power Amplifiers with Cdma Applications Reprinted with Permission of Microwave Journal
With the increasing importance of spectral efficiency in mobile communications, linearity of the RF PA has become a critical… 
1997
1997
Hot-carrier reliability in submicrometer LDMOS transistors
This paper provides a physical basis for the experimentally determined hot-electron-limited safe operating area of submicrometer… 
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