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LDMOS

LDMOS (laterally diffused metal oxide semiconductor) transistors are used in microwave/RF power amplifiers. These transistors are often fabricated on… Expand
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Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2017
2017
A novel superjunction (SJ) lateral double-diffused MOSFET (>950 V) with a thin layer SOI combining the advantage of low specific… Expand
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2017
2017
The technological development of application specific VDMOS and lateral trench power MOSFETs is described. Unlike general-purpose… Expand
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2015
2015
A new superjunction LDMOS (SJ-LDMOS) is proposed with the step doping buffered layer under the SJ layer to obtain the low loss… Expand
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2015
2015
This paper presents an envelope tracking (ET) transmitter architecture based on the combination of a novel 3-bit (N = 3) supply… Expand
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2014
2014
A junction-isolated triple RESURF (JITR) LDMOS with high breakdown voltage (BV) and low specific on-resistance (Ron,sp) is… Expand
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2014
2014
This paper provides a comprehensive analysis of the AM/AM and AM/PM nonlinear distortion generation mechanisms arising in the… Expand
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Highly Cited
2005
Highly Cited
2005
This paper reports a driver circuitry to generate bi-phasic (anodic and cathodic) current pulses for stimulating the retinal… Expand
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Highly Cited
2004
Highly Cited
2004
The hot-carrier degradation behavior of both a lateral and a vertical integrated DMOS transistor is investigated in detail by the… Expand
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Highly Cited
2004
Highly Cited
2004
Energy efficiency of RF transceivers is critical and paramount for longer battery life in portable devices, which is improved by… Expand
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Highly Cited
2004
Highly Cited
2004
This paper reports on an integrated adaptive digital/RF predistorter using a nonuniform spaced lookup table (LUT) and in-phase… Expand
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