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LDMOS

LDMOS (laterally diffused metal oxide semiconductor) transistors are used in microwave/RF power amplifiers. These transistors are often fabricated on… 
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Related topics

Related topics

9 relations
AmpleonBCDMOSDoherty amplifierIntegrated circuit

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2014
2014
Thermoreflectance CCD Imaging of Self-Heating in Power MOSFET Arrays
Thermoreflectance imaging with high spatial resolution is used to inspect self-heating distribution in active high power (4A… 
2012
2012
Electrical Characteristic Investigation on a Novel Double-Well Isolation Structure in 600-V-Class High-Voltage Integrated Circuits
In order to achieve a high breakdown voltage (BV) and to avoid local breakdown in high-voltage integrated circuits, a novel… 
2010
2010
Active Harmonic Load-Pull With Realistic Wideband Communications Signals
A new wideband open-loop active harmonic load–pull measurement approach is presented. The proposed method is based on wideband… 
2007
2007
Envelope tracking power amplifier with static predistortion linearization
An efficiency enhanced power amplifier is presented. The amplifier uses envelope tracking (ET) technique and static predistortion… 
2007
2007
Development of GaN HEMT based High Power High Efficiency Distributed Power Amplifier for Military Applications
Implementing wide bandgap GaN HEMT device into broadband distributed power amplifier creates a tremendous opportunity for RF… 
Review
2007
Review
2007
Design for Reliability: The RF Power LDMOSFET
The design of lateral diffused MOSFETs operating under continuous peak power in RF communication applications is one of the most… 
Highly Cited
2005
Highly Cited
2005
A Rugged LDMOS for LBC5 Technology
This paper presents a new method of enhancing the SOA of n-channel Ldmos transistors. Attention is focused on those applications… 
2003
2003
A floating RESURF (FRESURF) LD-MOSFET device concept
This letter reports a novel device concept, which is an extension of the conventional reduced surface field (RESURF) concept. A… 
1999
1999
An LDMOS VHF class E power amplifier using a high Q novel variable inductor
An LDMOS based VHF Class E power amplifier has been investigated theoretically and experimentally. Simulations were verified by… 
1997
1997
Hot-carrier reliability in submicrometer LDMOS transistors
This paper provides a physical basis for the experimentally determined hot-electron-limited safe operating area of submicrometer… 
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