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LDMOS
LDMOS (laterally diffused metal oxide semiconductor) transistors are used in microwave/RF power amplifiers. These transistors are often fabricated on…
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Related topics
Related topics
9 relations
Ampleon
BCDMOS
Doherty amplifier
Integrated circuit
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Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2015
2015
RAMI Optimization-Oriented Design For The LIPAc RF Power System
M. Weber
,
J. Arroyo
,
+5 authors
C. D. L. Morena
2015
Corpus ID: 64421547
The Linear IFMIF Prototype Accelerator (LIPAc) is currently under construction in Rokkasho (Japan). LIPAc will generate a…
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2009
2009
Face Misalignment Problem
S. Shan
,
Xilin Chen
,
Wen Gao
Encyclopedia of Biometrics
2009
Corpus ID: 31803283
Review
2004
Review
2004
Peripheral motor drive PIC concerns for integrated LDMOS technologies
B. Smith
,
J. Xu
,
+4 authors
T. Efland
Proceedings of the International Symposium on…
2004
Corpus ID: 22066775
This work reviews common motor types, driving methods, and associated requirements of power LDMOS drivers including BVdss, Rdson…
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2004
2004
A high efficient LDMOS power amplifier based on an inverse class F architecture
F. Lépine
,
A. Ådahl
,
H. Zirath
European Microwave Conference
2004
Corpus ID: 11230580
A power amplifier based on the inverse Class F topology bas been developed. The design has been done at 1 GHz with an LDMOS…
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Review
2004
Review
2004
Nonlinearity test for a fully integrated direct-conversion receiver
Pengfei Zhang
2004
Corpus ID: 221255877
This article reviews the definitions and measurement techniques of the nonlinear characteristics of a receiver. A series of tests…
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2003
2003
A new modeling and parameter extraction technique for uni-directional high-voltage MOS devices
Cao Na
,
Wu Rui
,
Zheng Guoxiang
International Conference on ASIC
2003
Corpus ID: 62583043
In this paper, a new method of modeling uni-directional HV MOS device based on the common BSIM3V3 model is presented. We propose…
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2002
2002
Newly designed isolated RESURF LDMOS transistor for 60 V BCD process provides 20 V vertical NPN transistor
T. Kwon
,
Y.S. Jeoung
,
+4 authors
C.S. Song
60th DRC. Conference Digest Device Research…
2002
Corpus ID: 27094984
RESURF LDMOS transistors are utilized in high side driver applications and other applications that mandate electrical isolation…
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1999
1999
RF LDMOS with extreme low parasitic feedback capacitance and high hot-carrier immunity
Shuming Xu
,
P. Foo
,
J. Wen
,
Y. Liu
,
F. Lin
,
C. Ren
1999
Corpus ID: 114466263
In this paper, a new RF LDMOS is demonstrated with a cost effective process technology. By combining a step LDD and an inherent…
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1997
1997
A new empirical large signal model for silicon RF LDMOS FETs
Monte Miller
,
Triet Dinh
,
E. Shumate
IEEE MTT-S Symposium on Technologies for Wireless…
1997
Corpus ID: 16422076
A new empirical large signal drain current source model, that is single-piece and continuously differentiable, has been developed…
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1987
1987
LDMOS and LIGT's in CMOS technology for power integrated circuits
S. Mukherjee
,
M. Amato
,
I. Wacyk
,
V. Rumennik
International Electron Devices Meeting
1987
Corpus ID: 44558784
In MOS Power Integrated Circuits, the Lateral Double Diffused MOS Transistor (LDMOS) has been used as a power device because of…
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