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Junction temperature
Known as:
TJMax
Junction temperature is the highest operating temperature of the actual semiconductor in an electronic device. In operation, it is higher than case…
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Related topics
Related topics
13 relations
Computer cooling
Dopant
Electron mobility
Heat sink
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Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2013
2013
Novel packaging design for high-power GaN-on-Si high electron mobility transistors (HEMTs)
Stone Cheng
,
Po-Chien Chou
2013
Corpus ID: 6550164
2013
2013
Can thermocouple measure surface temperature of light emitting diode module accurately
Xing Fu
,
Xiaobing Luo
2013
Corpus ID: 52219295
2012
2012
Failure analysis of electrical-thermal-optical characteristics of LEDs based on AlGaInP and InGaN/GaN
Huanting Chen
,
A. Keppens
,
+4 authors
Zhong Chen
2012
Corpus ID: 59332043
The electrical-thermal-optical characteristics of AlGaInP yellow and InGaN/GaN blue LEDs under electrical stresses were studied…
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Review
2010
Review
2010
Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency
X. Ni
,
Xing Li
,
+5 authors
H. Morkoç
2010
Corpus ID: 59422107
2007
2007
Ultrafast Temperature Profile Calculation in Ic Chips
T. Kemper
,
Y. Zhang
,
Z. Bian
,
A. Shakouri
2007
Corpus ID: 16115386
One of the crucial steps in the design of an integrated circuit is the minimization of heating and temperature non-uniformity…
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2004
2004
A novel SiC J-FET gate drive circuit for sparse matrix converter applications
M. Heldwein
,
Johann W. Kolar
Nineteenth Annual IEEE Applied Power Electronics…
2004
Corpus ID: 29453341
Three-phase AC/AC sparse matrix converters (SMC) show a low realization effort and a low control complexity and are therefore of…
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2004
2004
Bias temperature instability assessment of n- and p-channel MOS transistors using a polysilicon resistive heated scribe lane test structure
W. Muth
,
W. Walter
Microelectronics and reliability
2004
Corpus ID: 30202947
2004
2004
Physical limitation of the cascoded snapback NMOS ESD protection capability due to the non-uniform turn-off
V. Vashchenko
,
A. Concannon
,
M. ter Beek
,
P. Hopper
IEEE transactions on device and materials…
2004
Corpus ID: 10735586
The nonlinear effects and physical failure mechanism in over-voltage protection NMOS snapback structures during ESD operation…
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Highly Cited
2002
Highly Cited
2002
Active Clamped ZVS Forward Converter With Soft-Switched Synchronous Rectifier
A. Açik
,
Isk Cadirci
2002
Corpus ID: 2653204
This paper presents the analysis, design and implementation of an active-clamped, ZVS forward converter equipped with a soft…
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1999
1999
Light emission and detection by metal oxide silicon tunneling diodes
C. Liu
,
M. Lee
,
C. Lin
,
I. Lin
,
W. Liu
,
H. Lin
International Electron Devices Meeting…
1999
Corpus ID: 27456470
Both NMOS and PMOS light-emitting diodes and photodetectors are demonstrated. For the ultrathin gate oxide, the tunneling gate of…
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