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Glycyrrhiza uralensis

Known as: ??, Glycyrrhiza uralenses, Gan cao 
A plant species of the family FABACEAE.
National Institutes of Health

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GlycyrrhizaGlycyrrhiza ExtractGlycyrrhiza uralensis RootGlycyrrhiza uralensis extract

Papers overview

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Highly Cited
2013
Highly Cited
2013
Understanding the effect of PCB layout on circuit performance in a high frequency gallium nitride based point of load converter
The introduction of enhancement mode gallium nitride based power devices such as the eGaN®FET offers the potential to achieve… 
Highly Cited
2006
Highly Cited
2006
Enhancement-Mode n-Channel GaN MOSFETs on p and n-GaN/Sapphire Substrates
We report on the demonstration of enhancement-mode n-channel GaN high-voltage metal-oxide field-effect transistor (MOSFET… 
Highly Cited
2006
Highly Cited
2006
Surface leakage currents in SiN/sub x/ passivated AlGaN/GaN HFETs
A novel guarded surface leakage test structure is used to isolate the surface and bulk leakage contributions to gate current in… 
Highly Cited
2001
Highly Cited
2001
Low-temperature synthesis, structure, and bioactivity of gel-derived glasses in the binary CaO-SiO2 system.
Glasses in the binary system CaO-SiO2 for which the molar fraction of CaO is 0 < or = x < or = 0.50, were prepared by means of a… 
Highly Cited
1999
Highly Cited
1999
Composition and structure of the apatite formed on PET substrates in SBF modified with various ionic activity products.
An apatite layer was formed on polyethyleneterephthalate (PET) substrates by the following biomimetic process. PET substrates… 
Highly Cited
1996
Highly Cited
1996
Strain effects on excitonic transitions in GaN: Deformation potentials.
We present the results of experimental studies of the strain effects on the excitonic transitions in GaN epitaxial layers on… 
Highly Cited
1996
Highly Cited
1996
Measured microwave power performance of AlGaN/GaN MODFET
We report the first microwave power measurement on GaN FET's. At 2 GHz, a class A output power density of 1.1 W/mm with a power… 
Highly Cited
1996
Highly Cited
1996
Competition between band gap and yellow luminescence in GaN and its relevance for optoelectronic devices
The competition between band gap and the 2.2 eV (yellow) luminescence of epitaxial GaN is studied for excitation densities… 
Highly Cited
1994
Highly Cited
1994
Change in crystalline morphologies of polycrystalline silicon films prepared by radio‐frequency plasma‐enhanced chemical vapor deposition using SiF4+H2 gas mixture at 350 °C
Polycrystalline silicon films have been deposited on glass substrates at 350 °C by radio‐frequency plasma‐enhanced chemical vapor… 
Highly Cited
1991
Highly Cited
1991
Bone-bonding ability of P2O5-free CaO.SiO2 glasses.
An apatite- and wollastonite-containing glass-ceramic (A.W-GC) has been reported to form a tight bond with living bone through an… 
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