Gerbich blood group system

Known as: BLOOD GROUP, GERBICH SYSTEM, GE 
 
National Institutes of Health

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GYPC gene

Papers overview

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2017
2017
Correlation of Gate Capacitance with Drive Current and Transconductance in Negative Capacitance Ge PFETs
Correlation of gate capacitance <inline-formula> <tex-math notation="LaTeX">${C} _{G}$ </tex-math></inline-formula> with drive… (More)
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2016
2016
Improved Electrical Characteristics of Ge pMOSFETs With ZrO2/HfO2 Stack Gate Dielectric
Electrical characteristics of Ge pMOSFETs with HfO<sub>2</sub>, ZrO<sub>2</sub>, ZrO<sub>2</sub>/HfO<sub>2</sub>, and HfZrO<sub>x… (More)
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2013
2013
Antiepileptic action of N-palmitoylethanolamine through {CB1} and PPAR-a receptor activation in a ge
 
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2012
2012
A thermally robust phase change memory by engineering the Ge/N concentration in (Ge, N)xSbyTe z phase change material
Phase change memory (PCRAM) is an ideal embedded memory due to its simple BEOL process and low voltage operation. Industrial and… (More)
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2012
2012
High mobility Ge pMOSFETs with 0.7 nm ultrathin EOT using HfO2/Al2O3/GeOx/Ge gate stacks fabricated by plasma post oxidation
HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/GeO<sub>x</sub>/Ge gate stacks were fabricated by applying the plasma post oxidation… (More)
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2009
2009
Ge (100) and (111) N- and P-FETs With High Mobility and Low- $T$ Mobility Characterization
In this paper, we demonstrate high-mobility bulk Ge N- and P-FETs with GeON gate dielectric. The highest electron mobility to… (More)
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2009
2009
Germanium In Situ Doped Epitaxial Growth on Si for High-Performance n + / p-Junction Diode
We demonstrate an abrupt and box-shaped n/p junction in Ge with a high level of activation of n-type-dopant phosphorus (P) using… (More)
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2008
2008
High mobility high-k/Ge pMOSFETs with 1 nm EOT -New concept on interface engineering and interface characterization
High-k/Ge interfaces are significantly improved through a new interface engineering scheme of using both effective pre-gate… (More)
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2008
2008
C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing
An electroabsorption modulator using a side-entry architecture achieved a contrast ratio exceeding 3 dB over a 3.5 nm range in… (More)
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1994
1994
Glycoprotein gE-negative pseudorabies virus has a reduced capability to infect second- and third-order neurons of the olfactory and trigeminal routes in the porcine central nervous system.
We investigated the spread of glycoprotein gE (gE)-negative pseudorabies virus (PRV) and its rescued 'wild-type' strain into and… (More)
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