Skip to search form
Skip to main content
Skip to account menu
Semantic Scholar
Semantic Scholar's Logo
Search 227,154,071 papers from all fields of science
Search
Sign In
Create Free Account
Gerbich blood group system
Known as:
BLOOD GROUP, GERBICH SYSTEM
, GE
National Institutes of Health
Create Alert
Alert
Related topics
Related topics
1 relation
GYPC gene
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2018
2018
Nonideality of Negative Capacitance Ge Field-Effect Transistors Without Internal Metal Gate
Jibao Wu
,
Ruoying Kanyang
,
+8 authors
Y. Hao
IEEE Electron Device Letters
2018
Corpus ID: 4067529
We demonstrate negative capacitance (NC) Ge field-effect transistors (FETs) utilizing the TaN/HfZrO<sub><italic>x</italic></sub…
Expand
2017
2017
Correlation of Gate Capacitance with Drive Current and Transconductance in Negative Capacitance Ge PFETs
Jing Li
,
Jiuren Zhou
,
+6 authors
Y. Hao
IEEE Electron Device Letters
2017
Corpus ID: 40384367
Correlation of gate capacitance <inline-formula> <tex-math notation="LaTeX">${C} _{G}$ </tex-math></inline-formula> with drive…
Expand
Highly Cited
2013
Highly Cited
2013
Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 $^{\circ}\hbox{C}\ \hbox{Si}_{2}\hbox{H}_{6}$ Passivation
X. Gong
,
G. Han
,
+13 authors
Y. Yeo
IEEE Electron Device Letters
2013
Corpus ID: 22355169
In this letter, we report the first study of the dependence of carrier mobility and drive current I<sub>Dsat</sub> of Ge<sub>0…
Expand
2012
2012
Conduction Mechanism of Se Schottky Contact to n-Type Ge
V. Janardhanam
,
Y. Park
,
H. Yun
,
Kwang-soon Ahn
,
Chel-Jong Choi
IEEE Electron Device Letters
2012
Corpus ID: 462684
The conduction mechanism of Se/n-type-Ge Schottky diodes is investigated using temperature-dependent current-voltage (I- V…
Expand
Highly Cited
2010
Highly Cited
2010
Atomic ordering and thermoelectric properties of the n-type clathrate Ba8Ni3.5Ge42.1square0.4.
L. Nguyen
,
U. Aydemir
,
+11 authors
S. Paschen
Dalton Transactions
2010
Corpus ID: 19717081
Single crystals of the type-I clathrate Ba(8)Ni(3.5)Ge(42.1)square(0.4) (space group Pm3n, no. 223, a = 10.798(2) A, l = 30 mm…
Expand
Highly Cited
2009
Highly Cited
2009
Ge (100) and (111) N- and P-FETs With High Mobility and Low- $T$ Mobility Characterization
D. Kuzum
,
A. Pethe
,
T. Krishnamohan
,
K. Saraswat
IEEE Transactions on Electron Devices
2009
Corpus ID: 41555075
In this paper, we demonstrate high-mobility bulk Ge N- and P-FETs with GeON gate dielectric. The highest electron mobility to…
Expand
2009
2009
Germanium In Situ Doped Epitaxial Growth on Si for High-Performance $\hbox{n}^{+}/\hbox{p}$-Junction Diode
Hyun‐Yong Yu
,
Y. Nishi
,
K. Saraswat
,
S. Cheng
,
P. Griffin
IEEE Electron Device Letters
2009
Corpus ID: 9714999
We demonstrate an abrupt and box-shaped n+/p junction in Ge with a high level of activation of n-type-dopant phosphorus (P) using…
Expand
2008
2008
High mobility high-k/Ge pMOSFETs with 1 nm EOT -New concept on interface engineering and interface characterization
R. Xie
,
T. H. Phung
,
+4 authors
Chunxiang Zhu
IEEE International Electron Devices Meeting
2008
Corpus ID: 41359453
High-k/Ge interfaces are significantly improved through a new interface engineering scheme of using both effective pre-gate…
Expand
Highly Cited
1999
Highly Cited
1999
Controlled arrangement of self-organized Ge islands on patterned Si (001) substrates
G. Jin
,
Jianlin Liu
,
S. Thomas
,
Y. Luo
,
Kang L. Wang
,
B. Nguyen
1999
Corpus ID: 25059119
We report the ability to arrange self-organized Ge islands on patterned Si (001) substrates. Selective epitaxial growth of Si is…
Expand
1995
1995
Atomic bond configuration of Ge(111)-( sqrt 3 x sqrt 3 )R30 degrees-Au: A low-energy electron-diffraction study.
Over
,
Wang
,
Jona
Physical Review B (Condensed Matter)
1995
Corpus ID: 43313242
We determined the bond geometry of the Ge(111)-(\ensuremath{\surd}3 \ifmmode\times\else\texttimes\fi{} \ensuremath{\surd}3 )R30…
Expand
By clicking accept or continuing to use the site, you agree to the terms outlined in our
Privacy Policy
(opens in a new tab)
,
Terms of Service
(opens in a new tab)
, and
Dataset License
(opens in a new tab)
ACCEPT & CONTINUE