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Gerbich blood group system

Known as: BLOOD GROUP, GERBICH SYSTEM, GE 
National Institutes of Health

Related topics

Related topics

1 relation
GYPC gene

Papers overview

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2018
2018
Nonideality of Negative Capacitance Ge Field-Effect Transistors Without Internal Metal Gate
We demonstrate negative capacitance (NC) Ge field-effect transistors (FETs) utilizing the TaN/HfZrO<sub><italic>x</italic></sub… 
2017
2017
Correlation of Gate Capacitance with Drive Current and Transconductance in Negative Capacitance Ge PFETs
Correlation of gate capacitance <inline-formula> <tex-math notation="LaTeX">${C} _{G}$ </tex-math></inline-formula> with drive… 
Highly Cited
2013
Highly Cited
2013
Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 $^{\circ}\hbox{C}\ \hbox{Si}_{2}\hbox{H}_{6}$ Passivation
In this letter, we report the first study of the dependence of carrier mobility and drive current I<sub>Dsat</sub> of Ge<sub>0… 
2012
2012
Conduction Mechanism of Se Schottky Contact to n-Type Ge
The conduction mechanism of Se/n-type-Ge Schottky diodes is investigated using temperature-dependent current-voltage (I- V… 
Highly Cited
2010
Highly Cited
2010
Atomic ordering and thermoelectric properties of the n-type clathrate Ba8Ni3.5Ge42.1square0.4.
Single crystals of the type-I clathrate Ba(8)Ni(3.5)Ge(42.1)square(0.4) (space group Pm3n, no. 223, a = 10.798(2) A, l = 30 mm… 
Highly Cited
2009
Highly Cited
2009
Ge (100) and (111) N- and P-FETs With High Mobility and Low- $T$ Mobility Characterization
In this paper, we demonstrate high-mobility bulk Ge N- and P-FETs with GeON gate dielectric. The highest electron mobility to… 
2009
2009
Germanium In Situ Doped Epitaxial Growth on Si for High-Performance $\hbox{n}^{+}/\hbox{p}$-Junction Diode
We demonstrate an abrupt and box-shaped n+/p junction in Ge with a high level of activation of n-type-dopant phosphorus (P) using… 
2008
2008
High mobility high-k/Ge pMOSFETs with 1 nm EOT -New concept on interface engineering and interface characterization
High-k/Ge interfaces are significantly improved through a new interface engineering scheme of using both effective pre-gate… 
Highly Cited
1999
Highly Cited
1999
Controlled arrangement of self-organized Ge islands on patterned Si (001) substrates
We report the ability to arrange self-organized Ge islands on patterned Si (001) substrates. Selective epitaxial growth of Si is… 
1995
1995
Atomic bond configuration of Ge(111)-( sqrt 3 x sqrt 3 )R30 degrees-Au: A low-energy electron-diffraction study.
  • OverWangJona
  • Physical Review B (Condensed Matter)
  • 1995
  • Corpus ID: 43313242
We determined the bond geometry of the Ge(111)-(\ensuremath{\surd}3 \ifmmode\times\else\texttimes\fi{} \ensuremath{\surd}3 )R30… 
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