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Gerbich blood group system

Known as: BLOOD GROUP, GERBICH SYSTEM, GE 
 
National Institutes of Health

Related topics

Related topics

1 relation
GYPC gene

Papers overview

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Highly Cited
2013
Highly Cited
2013
Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 $^{\circ}\hbox{C}\ \hbox{Si}_{2}\hbox{H}_{6}$ Passivation
In this letter, we report the first study of the dependence of carrier mobility and drive current I<sub>Dsat</sub> of Ge<sub>0… Expand
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Highly Cited
2013
Highly Cited
2013
Stability and electronic properties of ultrathin films of silicon and germanium.
Recent studies have examined the possibility of growing honeycomb silicene and germanene, the silicon and germanium analogues of… Expand
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2012
2012
Surface disordered Ge-Si core-shell nanowires as efficient thermoelectric materials.
Ge-Si core-shell nanowires with surface disorder are shown to be very promising candidates for thermoelectric applications. In… Expand
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Highly Cited
2011
Highly Cited
2011
DWT-PCA (EVD) Based Copy-move Image Forgery Detection
In a co py-move image forgery, a part of an ima ge is copied and then pasted on a different location within the sa me image. Usua… Expand
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Highly Cited
2010
Highly Cited
2010
Atomic ordering and thermoelectric properties of the n-type clathrate Ba8Ni3.5Ge42.1square0.4.
Single crystals of the type-I clathrate Ba(8)Ni(3.5)Ge(42.1)square(0.4) (space group Pm3n, no. 223, a = 10.798(2) A, l = 30 mm… Expand
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Highly Cited
2009
Highly Cited
2009
Ge (100) and (111) N- and P-FETs With High Mobility and Low- $T$ Mobility Characterization
In this paper, we demonstrate high-mobility bulk Ge N- and P-FETs with GeON gate dielectric. The highest electron mobility to… Expand
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Highly Cited
2008
Highly Cited
2008
C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing
Introduction: Development of photonics based on CMOS-compatible materials and processing may lead to inexpensive optoelectronic… Expand
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2008
2008
High mobility high-k/Ge pMOSFETs with 1 nm EOT -New concept on interface engineering and interface characterization
High-k/Ge interfaces are significantly improved through a new interface engineering scheme of using both effective pre-gate… Expand
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Highly Cited
1999
Highly Cited
1999
Controlled arrangement of self-organized Ge islands on patterned Si (001) substrates
We report the ability to arrange self-organized Ge islands on patterned Si (001) substrates. Selective epitaxial growth of Si is… Expand
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1995
1995
On the Optimisation of SiGe-Base Bipolar Transistors
Extensive computer simulations of NPN SiGe-base bipolar transistors were performed to examine the effect of the Ge profile in the… Expand
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