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Generation–recombination noise

Known as: G-r noise, Generation-Recombination noise 
Generation–recombination noise, or g–r noise, is a type of electrical signal noise caused statistically by the fluctuation of the generation and… 
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Papers overview

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2013
2013
Semiconductor material is important to the performance of the terahertz (THz) photoconductive antenna. In this paper, we… 
Review
2010
Review
2010
MUSIC (the Multiwavelength Submillimeter kinetic Inductance Camera) is an instrument being developed for the Caltech… 
2004
2004
The low-frequency (LF) noise in fully depleted (FD) silicon-on-insulator (SOI) MOSFETs is investigated both theoretically and… 
2002
2002
Low-frequency noise in Al0.4Ga0.6N thin films (50 nm) was measured at room and elevated temperatures as function of gate and… 
2001
2001
A theory for the current noise associated with carrier generation and recombination in the space-charge region of p–n junctions… 
1995
1995
The influence of the nonuniform photogeneration on the electric‐field distribution is considered for quantum‐well photodetectors… 
1984
1984
The low-frequency noise in a double-heterojunction bipolar transistor (DHBT) consisted of burst noise and generation… 
1984
1984
A theory of generation–recombination noise is presented and applied to the analysis of the performance limitations of extrinsic… 
1975
1975
A new derivation is given for the noise in JFET's stemming from generation-recombination or trapping processes in the channel… 
1969
1969
This paper is concerned with some of the mathematical aspects of noise in solids. Attention is given to generation-recombination…