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An improved theory for remote-charge-scattering-limited mobility in silicon inversion layers is developed. The model takes into account the effects of image charges, screening, inversion layerâ€¦ (More)

We have developed a new analytical ultra-short channel MOSFET model for circuit simulation including velocity overshoot effects. We have been able to reproduce experimental I-V curves andâ€¦ (More)

The effect of surface-roughness scattering on electron transport properties in extremely thin double gate silicon-on-insulator inversion layers has been analyzed. It is shown that if the siliconâ€¦ (More)

- F Gimiz, Melchor, A. Palma, P. Cartujo
- 1994

The effect of the space correlation of oxide charges on the effective mobility of electrons in the channel of an NMOS transistor has been studied. Mobility has been obtained by a single-electronâ€¦ (More)

We have studied in depth the performance of superficial and buried strained-Si/SixGe1âˆ’x channel Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFET). To do so, we developed a two-dimensionalâ€¦ (More)

- F. G amiz, A. Godoy, J. E. Carceller, P. Cartujo
- 2004

Electron transport properties in double-gate-silicon-on-insulator (DGSOI) transistors are comprehensively studied. Quantum effects are analyzed by self-consistently solving the 1 D Poisson andâ€¦ (More)

A theory for the current noise associated with carrier generation and recombination in the space-charge region of p â€“ n junctions is presented. We propose a noise model based on the response of theâ€¦ (More)

- F. GÃ¡miz, J. A. LÃ³pez-Villanueva, J. B. RoldÃ¡n, J. E. Carceller, P. Cartujo
- ESSDERC '96: Proceedings of the 26th Europeanâ€¦
- 1996

Electron transport properties of strained-Si on relaxed Si<inf>1-x</inf>Ge<inf>x</inf> channel MOSFETs have been studied using a Monte Carlo simulator. The steady- and non-steady-stateâ€¦ (More)

A new electron mobility model for strained-Si MOSFETs has been developed. The mobility increase produced by the strain in the silicon layer is accurately studied and described by means of simpleâ€¦ (More)

- F. G amiz, Pedro Cartujo-Cassinello, F. Jim enez-Molinos, J. E. Carceller, P. Cartujo
- 2004

We have studied the influence of the image and exchange-correlation effects in double-gate silicon on insulator (DGSOI) devices, in the calculation of both charge distribution and of electronâ€¦ (More)