Gas immersion laser doping

Gas Immersion Laser Doping is a method of doping a semiconductor material like Silicon.
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Topic mentions per year

1985-2011
01219852011

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2011
2011
Non-rectifying (ohmic) contacts are essential for efficient photoconductive semiconductor switch performance and maximizing… (More)
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2005
2005
Silicon nano-wires were fabricated using thin Silicon on Insulator (SOI) wafers and a combination of anisotropic wet etching by… (More)
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1999
1999
Selective growth of Ge,Si, _ x on Si is demonstrated for the first time using a pulsed laser induced epitaxy technique, combined… (More)
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1997
1997
We present electrical results from polysilicon thin film transistors (TFT's) fabricated using laser-recrystallized channels and… (More)
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1996
1996
In this letter we report on fabrication of p/sup +//n diodes with junction depths less than 60 nm using gas immersion laser… (More)
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1992
1992
Gas immersion laser doping (GILD) was used to fabricate p/sup +/-n diodes with 300-AA junction depth. These diodes exhibit… (More)
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1989
1989
Gas immersion laser doping (GILD) is used to fabricate the base and emitter regions of narrow-base n-p-n bipolar transistors. The… (More)
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1988
1986
1986
The fabrication of MOSFET's with submicrometer gate lengths using Gas Immersion Laser Doping (GILD) to dope the source-drain and… (More)
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1985
1985
The fabrication of ultra-shallow high-concentration boron profiles in silicon has been carried out utilizing a XeCl excimer laser… (More)
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