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Gas immersion laser doping

Gas Immersion Laser Doping is a method of doping a semiconductor material like Silicon.
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Papers overview

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2001
2001
Abstract : The objective of this SBIR program is to develop all-solid-state pulsed modulators to drive the high power excimer… Expand
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1997
1997
We present electrical results from polysilicon thin film transistors (TFT's) fabricated using laser-recrystallized channels and… Expand
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1996
1996
In this letter we report on fabrication of p/sup +//n diodes with junction depths less than 60 nm using gas immersion laser… Expand
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Review
1994
Review
1994
Projection Gas Immersion Laser Doping (P-GILD) is an innovative doping process that utilizes finely patterned excimer laser light… Expand
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1993
1993
Shallow junctions under silicide contact layers have been fabricated using a gas-phase dopant source and pulsed laser heating. A… Expand
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1989
1989
Gas immersion laser doping (GILD) is used to fabricate the base and emitter regions of narrow-base n-p-n bipolar transistors. The… Expand
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1989
1989
Gas. Immersion Laser Doping (GILD) is presented as a powerful process to fabricate emitter and base regions in narrow-base… Expand
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1988
1988
A simulation program that models the gas immersion laser doping (GILD) process is described. This program, which is called… Expand
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1986
1986
The fabrication of MOSFET's with submicrometer gate lengths using Gas Immersion Laser Doping (GILD) to dope the source-drain and… Expand
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Review
1984
Review
1984
The use of short pulse lasers to dope silicon is discussed. Results of the process when used to fabricate silicon solar cells and… Expand
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