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Gas immersion laser doping

Gas Immersion Laser Doping is a method of doping a semiconductor material like Silicon.
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Papers overview

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2004
2004
The future CMOS generations for microelectronics will require advanced doping techniques capable to realize ultra-shallow, highly… 
2001
2001
Abstract : The objective of this SBIR program is to develop all-solid-state pulsed modulators to drive the high power excimer… 
1997
1997
We present electrical results from polysilicon thin film transistors (TFT's) fabricated using laser-recrystallized channels and… 
1996
1996
In this letter we report on fabrication of p/sup +//n diodes with junction depths less than 60 nm using gas immersion laser… 
Review
1994
Review
1994
Projection Gas Immersion Laser Doping (P-GILD) is an innovative doping process that utilizes finely patterned excimer laser light… 
1989
1989
Gas immersion laser doping (GILD) is used to fabricate the base and emitter regions of narrow-base n-p-n bipolar transistors. The… 
1989
1989
  • K. WeinerT. Sigmon
  • Photonics West - Lasers and Applications in…
  • 1989
  • Corpus ID: 109043552
Gas. Immersion Laser Doping (GILD) is presented as a powerful process to fabricate emitter and base regions in narrow-base… 
1988
1988
A simulation program that models the gas immersion laser doping (GILD) process is described. This program, which is called… 
1988
1988
Gas immersion laser doping (GILD) is presented as a promising new method to fabricate base and emitter regions of precise depth… 
1986
1986
The fabrication of MOSFET's with submicrometer gate lengths using Gas Immersion Laser Doping (GILD) to dope the source-drain and…