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Gas immersion laser doping

Gas Immersion Laser Doping is a method of doping a semiconductor material like Silicon.
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Related topics

Related topics

3 relations
SemiconductorWafer (electronics)

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Semiconductor device fabrication

Papers overview

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2001
2001
All-Solid-State Drivers for High Power Excimer Lasers Used in Projection Gas Immersion Laser Doping
Abstract : The objective of this SBIR program is to develop all-solid-state pulsed modulators to drive the high power excimer… 
1997
1997
Self-aligned aluminum top-gate polysilicon thin-film transistors fabricated using laser recrystallization and gas-immersion laser doping
We present electrical results from polysilicon thin film transistors (TFT's) fabricated using laser-recrystallized channels and… 
1996
1996
Characterization of reverse leakage components for ultrashallow p+/n diodes fabricated using gas immersion laser doping
In this letter we report on fabrication of p/sup +//n diodes with junction depths less than 60 nm using gas immersion laser… 
Review
1994
Review
1994
Projection Gas Immersion Laser Doping (P-GILD): A resistless, nanosecond thermal doping/diffusion technology
Projection Gas Immersion Laser Doping (P-GILD) is an innovative doping process that utilizes finely patterned excimer laser light… 
1993
1993
Doping of and outdiffusion from tungsten silicide films using gas immersion laser doping
Shallow junctions under silicide contact layers have been fabricated using a gas-phase dopant source and pulsed laser heating. A… 
1989
1989
Thin-base bipolar transistor fabrication using gas immersion laser doping
Gas immersion laser doping (GILD) is used to fabricate the base and emitter regions of narrow-base n-p-n bipolar transistors. The… 
1989
1989
Bipolar Transistor Fabrication Using Gas Immersion Laser Doping
  • K. WeinerT. Sigmon
  • Photonics West - Lasers and Applications in…
  • 1989
  • Corpus ID: 109043552
Gas. Immersion Laser Doping (GILD) is presented as a powerful process to fabricate emitter and base regions in narrow-base… 
1988
1988
Emitter and base fabrication in advanced bipolar transistors using gas immersion laser doping
Gas immersion laser doping (GILD) is presented as a promising new method to fabricate base and emitter regions of precise depth… 
1987
1987
Si-photocell with an ultrashallow junction by gas immersion laser doping and its characteristics
By means of GILD (gas immersion laser doping) on the surface of n-type Si samples, with BBr/sub 3/ vapor as the working material… 
Review
1984
Review
1984
Gas Immersion Laser Doping
The use of short pulse lasers to dope silicon is discussed. Results of the process when used to fabricate silicon solar cells and… 
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