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Gallium:MCnc:Pt:Bld:Qn

Known as: ??:????:????:??:??, Galio:Concentración de masa:Punto temporal:Sangre:Qn, Galliyum:KütlKons:Zml?:Kan:Kant 
National Institutes of Health

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4 relations
BloodGalliumUnit of Mass Concentrationwhole blood

Papers overview

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Highly Cited
2014
Highly Cited
2014
Tunable Q-switched fiber laser based on saturable edge-state absorption in few-layer molybdenum disulfide (MoS₂).
We fabricate a few-layer molybdenum disulfide (MoS₂) polymer composite saturable absorber by liquid-phase exfoliation, and use… 
Review
2013
Review
2013
Electronic and optoelectronic materials and devices inspired by nature
Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors… 
Highly Cited
2009
Highly Cited
2009
Gallium arsenide p-i-n radial structures for photovoltaic applications
Gallium arsenide p-i-n radial junctions were fabricated by molecular beam epitaxy. The current-voltage characteristics of single… 
Highly Cited
2004
Highly Cited
2004
Coherent spin manipulation without magnetic fields in strained semiconductors
A consequence of relativity is that in the presence of an electric field, the spin and momentum states of an electron can be… 
Highly Cited
2003
Highly Cited
2003
Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular Cross Sections
High-quality gallium nitride nanowires have been synthesized via metal-initiated metalorganic chemical vapor deposition for the… 
Highly Cited
2000
Highly Cited
2000
Synthesis and optical properties of gallium arsenide nanowires
Gallium arsenide (GaAs) nanowires have been synthesized in bulk quantities and high purity by laser-assisted catalytic growth… 
Highly Cited
2000
Highly Cited
2000
All-optical magnetic resonance in semiconductors
A scheme is proposed wherein nuclear magnetic resonance (NMR) can be induced and monitored using only optical fields. In analogy… 
Highly Cited
1999
Highly Cited
1999
Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation
Epitaxial growth of single-crystal gadolinium oxide dielectric thin films on gallium arsenide is reported. The gadolinium oxide… 
Highly Cited
1996
Highly Cited
1996
Formation of Atomically Flat Silver Films on GaAs with a "Silver Mean" Quasi Periodicity
A flat epitaxial silver film on a gallium arsenide [GaAs(110)] surface was synthesized in a two-step process. Deposition of a… 
Review
1986
Review
1986
Properties of gallium arsenide
  • Inspec
  • 1986
  • Corpus ID: 106625009
It was in 1986 that INSPEC (The Information Division of the Institution of Electrical Engineers) published the book "Properties… 
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