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Gallium:MCnc:Pt:Bld:Qn

Known as: ??:????:????:??:??, Galio:Concentración de masa:Punto temporal:Sangre:Qn, Galliyum:KütlKons:Zml?:Kan:Kant 
National Institutes of Health

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4 relations
BloodGalliumUnit of Mass Concentrationwhole blood

Papers overview

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Highly Cited
1995
Highly Cited
1995
Assembly of submicrometre ferromagnets in gallium arsenide semiconductors
THE discovery of spin-dependent electronic phenomena in magnetic multilayers1 and granular solids2,3 has provided valuable… 
Highly Cited
1994
Highly Cited
1994
VLSI fabrication principles : sil-icon and gallium arsenide
Material Properties. Phase Diagrams and Solid Solubility. Crystal Growth and Doping. Diffusion. Epitaxy. Ion Implantation. Native… 
Highly Cited
1992
Highly Cited
1992
High-precision determination of the temperature dependence of the fundamental energy gap in gallium arsenide.
The photoluminescence (PL) spectra of GaAs have been measured as a function of temperature between 2 and 280 K. Measurements have… 
Highly Cited
1992
Highly Cited
1992
Atomic and molecular hydrogen in gallium arsenide: A theoretical study.
  • PavesiGiannozzi
  • Physical Review B (Condensed Matter)
  • 1992
  • Corpus ID: 42073386
We present first-principles calculations of the properties of atomic and molecular hydrogen in pure bulk GaAs. Our results… 
Highly Cited
1991
Highly Cited
1991
Direct comparison of the quantized Hall resistance in gallium arsenide and silicon.
Using an ultrasensitive, cryogenic, current-comparator bridge the quantized Hall resistance R H (2) in a GaAs/AlGaAs… 
Highly Cited
1988
Highly Cited
1988
High-resolution infrared study of the neutralization of silicon donors in gallium arsenide.
Highly Cited
1988
Highly Cited
1988
Design of a Monomeric Arsinogallane and Chemical Conversion to Gallium Arsenide
A monomeric arsinogallane containing a covalent gallium-arsenic bond has been prepared, and its molecular structure has been… 
Highly Cited
1987
Highly Cited
1987
Direct subpicosecond measurement of carrier mobility of photoexcited electrons in gallium arsenide.
Highly Cited
1987
Highly Cited
1987
Energy Dependence of Proton-Induced Displacement Damage in Gallium Arsenide
Nonionizing energy deposition in gallium arsenide has been calculated for protons with energies ranging from 1 to 1000 MeV. The… 
Highly Cited
1958
Highly Cited
1958
Diffusion of Zinc in Gallium Arsenide
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