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Spintronics: A Spin-Based Electronics Vision for the Future
This review describes a new paradigm of electronics based on the spin degree of freedom of the electron, which has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices.
Resonant Spin Amplification in n-Type GaAs
Extended electron spin precession in $n$-type GaAs bulk semiconductors is directly observed by femtosecond time-resolved Faraday rotation in the Voigt geometry. Synchronous optical pumping of the
Observation of the Spin Hall Effect in Semiconductors
Measurements of unstrained gallium arsenide and strained indium gallia arsenide samples reveal that strain modifies spin accumulation at zero magnetic field, and a weak dependence on crystal orientation for the strained samples suggests that the mechanism is the extrinsic spin Hall effect.
Semiconductor spintronics and quantum computation
1 Ferromagnetic III-V Semiconductors and Their Heterostructures.- 2 Spin Injection and Transport in Micro- and Nanoscale Devices.- 3 Electrical Spin Injection: Spin-Polarized Transport from Magnetic
Quantum information processing using quantum dot spins and cavity QED
The electronic spin degrees of freedom in semiconductors typically have decoherence times that are several orders of magnitude longer than other relevant time scales. A solid-state quantum computer
Nanoscale Nuclear Magnetic Resonance with a Nitrogen-Vacancy Spin Sensor
It is shown that the NV center senses the nanotesla field fluctuations from the protons, enabling both time-domain and spectroscopic NMR measurements on the nanometer scale.
Emergence of the persistent spin helix in semiconductor quantum wells
Experimental observation of the emergence of the persistent spin helix in GaAs quantum wells by independently tuning α and β1 is reported, and a spin-lifetime enhancement of two orders of magnitude near the symmetry point is found.
Challenges for semiconductor spintronics
High-volume information-processing and communications devices are at present based on semiconductor devices, whereas information-storage devices rely on multilayers of magnetic metals and insulators.
Observation of the spin-Seebeck effect in a ferromagnetic semiconductor.
The spin-Seebeck effect is observed in a ferromagnetic semiconductor, GaMnAs, which allows flexible design of the magnetization directions, a larger spin polarization, and measurements across the magnetic phase transition, even in the absence of longitudinal charge transport.
Quantum technologies with optically interfaced solid-state spins
Spins of impurities in solids provide a unique architecture to realize quantum technologies. A quantum register of electron and nearby nuclear spins in the lattice encompasses high-fidelity state