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Extraordinary magnetoresistance

Extraordinary magnetoresistance (EMR) is a geometrical magnetoresistance effect discovered in 2000, where the change in electrical resistance upon… Expand
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Related topics

Related topics

3 relations
Giant magnetoresistanceHall effect

Broader (1)

Spintronics

Papers overview

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Highly Cited
2015
Highly Cited
2015
Perfect charge compensation in WTe2 for the extraordinary magnetoresistance: From bulk to monolayer
The electronic structures of the WTe2 bulk and layers are investigated by using the first-principles calculations. The perfect… Expand
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2010
2010
Geometrically enhanced extraordinary magnetoresistance in semiconductor-metal hybrids
Extraordinary magnetoresistance (EMR) arises in hybrid systems consisting of semiconducting material with an embedded metallic… Expand
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2009
2009
Extraordinary Magnetoresistance in Hybrid Semiconductor-Metal Systems
We show that extraordinary magnetoresistance (EMR) arises in systems consisting of two components; a semiconducting ring with a… Expand
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2008
2008
FAST TRACK COMMUNICATION: Anisotropy-driven spin glass transition in the kagome antiferromagnet hydronium jarosite, (H3O)Fe3(SO4)2(OH)6
Highly frustrated systems have degenerate ground states that lead to novel properties. In magnetism the consequences of… Expand
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2007
2007
Optimizing the physical contribution to the sensitivity and signal to noise ratio of extraordinary magnetoresistance quantum well structures
For applications to extraordinary magnetoresistance (EMR) quantum well sensor design, the electron areal density n2D, the… Expand
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2006
2006
Temperature Dependence of Magnetotransport in Extraordinary Magnetoresistance Devices
Extraordinary magnetoresistance (EMR) devices have been fabricated and characterized at various magnetic fields, operating… Expand
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Highly Cited
2001
Highly Cited
2001
Finite-Element Modeling of Extraordinary Magnetoresistance in Thin Film Semiconductors with Metallic Inclusions
Using finite element analysis, the room temperature extraordinary magnetoresistance recently reported for a modified van der Pauw… Expand
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Highly Cited
2001
Highly Cited
2001
Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN
The characteristics of Ni/indium tin oxide (ITO) ohmic contacts to p-type GaN (∼2×1017 cm−3) have been studied. The Ni/ITO (10 nm… Expand
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2001
2001
Strong ferromagnetism and weak antiferromagnetism in double perovskites : Sr 2 Fe M O
Double perovskites Sr 2 FeM O 6 (M =Mo and Re) exhibit significant colossal magnetoresistance even at room temperature due to the… Expand
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1984
1984
Magnetic field induced crossover in weakly localized regimes and scaling of the conductivity
For a complex matrix ensemble modelling a two-dimensional (2D) disordered system in a perpendicular magnetic field H ⊥ the… Expand
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