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Extraordinary magnetoresistance

Extraordinary magnetoresistance (EMR) is a geometrical magnetoresistance effect discovered in 2000, where the change in electrical resistance upon… 
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Papers overview

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2017
2017
Semiconducting electronics have been transformed in part due to progress in spin polarized transport. Central to modern day… 
2013
2013
  • Jian Sun
  • 2013
  • Corpus ID: 138974984
Extraordinary Magnetoresistance Effect in Semiconductor/Metal Hybrid Structures 
2012
2012
Highly-anisotropic in-plane magneto-resistance (MR) in graphite (HOPG) samples has been recently observed (Y. Kopelevich et al… 
2011
2011
Graphene, a single atomic layer of hexagonally arranged carbon atoms, presents the optimal platform to study rarely-observed… 
2010
2010
Submitted for the MAR10 Meeting of The American Physical Society Voltage induced control and magnetoresistance of magnetically… 
2008
2008
The self-consistent effective-medium approximation is used to study the extraordinary magnetoresistance effect observed in… 
2007
2007
The family of (III,Mn)V ferromagnetic semiconductors offers unique opportunities for exploring the integration of two frontier… 
2006
2006
[序] ペロブスカイト型Mn酸化物は強磁性金属転移や電荷軌道整列転移、電子相分離、それに伴う巨大磁気抵 抗(CMR)効果の発見によって多くの研究者の興味を惹き、これまでに膨大な数の実験的・理論的研究結果が 報告されている。また、応用の面でもCMR… 
2001
2001
  • Hua Wu
  • 2001
  • Corpus ID: 236326171
We have implemented a systematic LSDA and LSDA+U study of the double perovskites A2FeReO6 (A=Ba,Sr,Ca) and Sr2MMoO6 (M=Cr,Mn,Fe…