• Publications
  • Influence
Spin Hall effects
In solid-state materials with strong relativistic spin-orbit coupling, charge currents generate transverse spin currents. The associated spin Hall and inverse spin Hall effects distinguish between
Theory of ferromagnetic (III, Mn) V semiconductors
The body of research on (III,Mn)V diluted magnetic semiconductors initiated during the 1990's has concentrated on three major fronts: i) the microscopic origins and fundamental physics of the
Universal intrinsic spin Hall effect.
It is argued that in a high-mobility two-dimensional electron system with substantial Rashba spin-orbit coupling, a spin current that flows perpendicular to the charge current is intrinsic, and the intrinsic spin-Hall conductivity has a universal value for zero quasiparticle spectral broadening.
Electrical switching of an antiferromagnet
Electrical writing is combined in solid-state memory with electrical readout and the stored magnetic state is insensitive to and produces no external magnetic field perturbations, which illustrates the unique merits of antiferromagnets for spintronics.
Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems
Spin-orbit coupling in inversion-asymmetric magnetic crystals and structures has emerged as a powerful tool to generate complex magnetic textures, interconvert charge and spin under applied current,
Tunneling anisotropic magnetoresistance: a spin-valve-like tunnel magnetoresistance using a single magnetic layer.
We introduce a new class of spintronic devices in which a spin-valve-like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a
Prospects for high temperature ferromagnetism in (Ga,Mn)As semiconductors
We report on a comprehensive combined experimental and theoretical study of Curie temperature trends in (Ga,Mn)As ferromagnetic semiconductors. Broad agreement between theoretical expectations and
Antiferromagnetic spintronics.
This Review focuses on recent works that have addressed how to manipulate and detect the magnetic state of an antiferromagnet efficiently and briefly mentions the broader context of spin transport, magnetic textures and dynamics, and materials research.
Experimental observation of the spin-Hall effect in a two-dimensional spin-orbit coupled semiconductor system.
The experimental observation of the spin-Hall effect in a 2D hole system with spin-orbit coupling shows only a weak effect of disorder, suggesting that the clean limitspin-Hall conductance description (intrinsic spin- hall effect) might apply to this system.
A spin-valve-like magnetoresistance of an antiferromagnet-based tunnel junction.
This work demonstrates a spintronic element whose transport characteristics are governed by an antiferromagnet and demonstrates that sensitivity to low magnetic fields can be combined with large, spin-orbit-coupling-induced magnetotransport anisotropy using a single magnetic electrode.