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Equivalent oxide thickness

An Equivalent oxide thickness is a distance, usually given in nanometers (nm), which indicates how thick a silicon oxide film would need to be to… (More)
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Topic mentions per year

1982-2017
0204019822017

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DopingSemiconductor

Related mentions per year

Related mentions per year

1940-2018
19401960198020002020
Equivalent oxide thickness
Semiconductor
Doping

Papers overview

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2017
2017
Impact of Equivalent Oxide Thickness on Threshold Voltage Variation Induced by Work-Function Variation in Multigate Devices
Using 3-D technology computer aided design simulation, we investigated the impact of equivalent oxide thickness (EOT) on… (More)
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2015
2015
Low-Frequency Noise Characterization of Ultra-Low Equivalent-Oxide-Thickness Thulium Silicate Interfacial Layer nMOSFETs
Low-frequency noise measurements were performed on n-channel MOSFETs with a novel ultra-low 0.3-nm equivalent-oxide-thickness… (More)
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2012
2012
Ultrathin Strained-Ge Channel P-MOSFETs With High-<formula formulatype="inline"><tex Notation="TeX">$K$ </tex></formula>/Metal Gate and Sub-1-nm Equivalent Oxide Thickness
Surface-channel strained-Ge (s-Ge) p-MOSFETs with high-<i>K</i>/metal gate stack and ozone surface passivation are fabricated… (More)
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2010
2010
Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La2O3 gate dielectrics
N-type metal–oxide–semiconductor field-effect transistor (MOSFET) with an equivalent oxide thickness (EOT) of 0.37 nm has been… (More)
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2009
2009
Equivalent Oxide Thickness of Trigate SOI MOSFETs With High-<formula formulatype="inline"> <tex Notation="TeX">$\kappa$</tex></formula> Insulators
The evolution of traditional metal-oxide-semiconductor field-effect transistors (MOSFETs) from planar single-gate devices into 3… (More)
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2009
2009
Interface-Engineered High-Mobility High-<formula formulatype="inline"><tex Notation="TeX">$k$</tex> </formula>/Ge pMOSFETs With 1-nm Equivalent Oxide Thickness
High-k/germanium (Ge) interfaces are significantly improved through a new interface engineering scheme of using both effective… (More)
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2009
2009
Effects of equivalent oxide thickness on bandgap-engineered SONOS flash memory
In order to implement more advanced nonvolatile memory device, many studies have been devoted to improve program/erase speed… (More)
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2005
2005
Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing an interfacial silica consumption reaction
A silicate reaction between lanthana and silica layers has been utilized to eliminate interfacial silica in metal-insulator… (More)
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2000
2000
Electrical characteristics of high quality La<sub>2</sub>O<sub>3</sub> gate dielectric with equivalent oxide thickness of 5 /spl Aring/
Electrical and reliability properties of ultrathin La/sub 2/O/sub 3/ gate dielectric have been investigated. The measured… (More)
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1999
1999
Zirconium oxide based gate dielectrics with equivalent oxide thickness of less than 1.0 nm and performance of submicron MOSFET using a nitride gate replacement process
Zirconium oxide is investigated as a possible replacement for SiO/sub 2/ gate dielectric thinner than 1.5 nm. A maximum… (More)
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