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Equivalent oxide thickness

Known as: EOT 
An Equivalent oxide thickness is a distance, usually given in nanometers (nm), which indicates how thick a silicon oxide film would need to be to… Expand
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Doping (semiconductor)Semiconductor

Papers overview

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Highly Cited
2015
Highly Cited
2015
Extended Reconstructed Sea Surface Temperature Version 4 (ERSST.v4). Part I: Upgrades and Intercomparisons
AbstractThe monthly Extended Reconstructed Sea Surface Temperature (ERSST) dataset, available on global 2° × 2° grids, has been… Expand
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Highly Cited
2014
Highly Cited
2014
An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates
InGaAs FinFETs fabricated by an unique Si fin replacement process have been demonstrated on 300mm Si substrates. The devices are… Expand
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Highly Cited
2011
Highly Cited
2011
Ferroelectric negative capacitance MOSFET: Capacitance tuning & antiferroelectric operation
A design methodology of ferroelectric (FE) negative capacitance FETs (NCFETs) based on the concept of capacitance matching is… Expand
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Highly Cited
2011
Highly Cited
2011
Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing
This work demonstrates the steepest subthreshold swing (SS < 60mV/decade) ever reported in a III–V Tunneling Field Effect… Expand
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Highly Cited
2008
Highly Cited
2008
A 32nm logic technology featuring 2nd-generation high-k + metal-gate transistors, enhanced channel strain and 0.171μm2 SRAM cell size in a 291Mb array
A 32 nm generation logic technology is described incorporating 2nd-generation high-k + metal-gate technology, 193 nm immersion… Expand
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Highly Cited
2008
Highly Cited
2008
A cost effective 32nm high-K/ metal gate CMOS technology for low power applications with single-metal/gate-first process
For the first time, we have demonstrated a 32 nm high-k/metal gate (HK-MG) low power CMOS platform technology with low standby… Expand
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Highly Cited
2007
Highly Cited
2007
Charge trapping characteristics of atomic-layer-deposited HfO2 films with Al2O3 as a blocking oxide for high-density non-volatile memory device applications
Charge trapping characteristics of high-relative permittivity (high-?) HfO2 films with Al2O3 as a blocking oxide in p-Si/SiO2… Expand
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Highly Cited
2006
Highly Cited
2006
Silicon CMOS devices beyond scaling
To a large extent, scaling was not seriously challenged in the past. However, a closer look reveals that early signs of scaling… Expand
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Highly Cited
2000
Highly Cited
2000
Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 /spl Aring/
Electrical and reliability properties of ultrathin La/sub 2/O/sub 3/ gate dielectric have been investigated. The measured… Expand
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Highly Cited
1983
Highly Cited
1983
Principles of transaction-oriented database recovery
In this paper, a terminological framework is provided for describing different transactionoriented recovery schemes for database… Expand
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