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Equivalent oxide thickness

Known as: EOT 
An Equivalent oxide thickness is a distance, usually given in nanometers (nm), which indicates how thick a silicon oxide film would need to be to… Expand
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Highly Cited
2015
Highly Cited
2015
AbstractThe monthly Extended Reconstructed Sea Surface Temperature (ERSST) dataset, available on global 2° × 2° grids, has been… Expand
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Highly Cited
2014
Highly Cited
2014
InGaAs FinFETs fabricated by an unique Si fin replacement process have been demonstrated on 300mm Si substrates. The devices are… Expand
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Highly Cited
2011
Highly Cited
2011
A design methodology of ferroelectric (FE) negative capacitance FETs (NCFETs) based on the concept of capacitance matching is… Expand
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Highly Cited
2011
Highly Cited
2011
This work demonstrates the steepest subthreshold swing (SS < 60mV/decade) ever reported in a III–V Tunneling Field Effect… Expand
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Highly Cited
2008
Highly Cited
2008
A 32 nm generation logic technology is described incorporating 2nd-generation high-k + metal-gate technology, 193 nm immersion… Expand
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Highly Cited
2008
Highly Cited
2008
For the first time, we have demonstrated a 32 nm high-k/metal gate (HK-MG) low power CMOS platform technology with low standby… Expand
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Highly Cited
2007
Highly Cited
2007
Charge trapping characteristics of high-relative permittivity (high-?) HfO2 films with Al2O3 as a blocking oxide in p-Si/SiO2… Expand
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Highly Cited
2006
Highly Cited
2006
To a large extent, scaling was not seriously challenged in the past. However, a closer look reveals that early signs of scaling… Expand
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Highly Cited
2000
Highly Cited
2000
Electrical and reliability properties of ultrathin La/sub 2/O/sub 3/ gate dielectric have been investigated. The measured… Expand
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Highly Cited
1983
Highly Cited
1983
In this paper, a terminological framework is provided for describing different transactionoriented recovery schemes for database… Expand
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