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Equivalent oxide thickness

Known as: EOT 
An Equivalent oxide thickness is a distance, usually given in nanometers (nm), which indicates how thick a silicon oxide film would need to be to… 
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Related topics

Related topics

2 relations
Doping (semiconductor)Semiconductor

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2015
2015
0.2V adiabatic NC-FinFET with 0.6mA/µm ION and 0.1nA/µm IOFF
We present for the first time a Negative Capacitance (NC) FinFET. Simulation shows 0.2V operation with 0.6mA/μm on-current and… 
2009
2009
Interface-Engineered High-Mobility High-$k$ /Ge pMOSFETs With 1-nm Equivalent Oxide Thickness
High-k/germanium (Ge) interfaces are significantly improved through a new interface engineering scheme of using both effective… 
Highly Cited
2009
Highly Cited
2009
Ultra low-EOT (5 Å) gate-first and gate-last high performance CMOS achieved by gate-electrode optimization
A novel gate first integration approach enabling ultra low-EOT is demonstrated. HfO<sub>2</sub> based devices with a zero… 
2007
2007
Effects of High-$\kappa$ (HfO$_2$) Gate Dielectrics in Double-Gate and Cylindrical-Nanowire FETs Scaled to the Ultimate Technology Nodes
In this work we investigate the performance of double-gate and cylindrical nanowire FETs with high-kappa gate dielectrics at… 
Highly Cited
2005
Highly Cited
2005
Si interlayer passivation on germanium MOS capacitors with high-/spl kappa/ dielectric and metal gate
We have demonstrated the advantages of silicon interlayer passivation on germanium MOS devices, with CVD HfO/sub 2/ as the high… 
Highly Cited
2004
Highly Cited
2004
Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH/sub 3/ and thin AlN) and TaN/HfO/sub 2/ gate stack
Ge-MOS devices (EOT /spl sim/7.5 /spl Aring/, J/sub g/ /spl sim/ 10/sup -3/ A/cm/sup 2/) are fabricated on both n- & p-type Ge… 
Highly Cited
2003
Highly Cited
2003
Ge MOS characteristics with CVD HfO/sub 2/ gate dielectrics and TaN gate electrode
In this paper, we report for the first time Ge MOS characteristics with ultra thin rapid thermal CVD HfO/sub 2/ gate dielectrics… 
2002
2002
Thermally stable CVD HfO/sub x/N/sub y/ advanced gate dielectrics with poly-Si gate electrode
In this paper, for the first time, we report high quality CVD hafnium oxynitride (HfOxNy) MOSFETs with conventional self-aligned… 
Highly Cited
2002
Highly Cited
2002
75 nm damascene metal gate and high-k integration for advanced CMOS devices
An advanced CMOS process has been proposed which include key features: 75 nm gate length damascene metal gate, high-k dielectrics… 
1993
1993
Construction Contract Claims
Brief History of Construction Contracts and Case Law Choice of Contracts Tender and Acceptance Monitoring Delay and Disruption… 
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