Equivalent oxide thickness

An Equivalent oxide thickness is a distance, usually given in nanometers (nm), which indicates how thick a silicon oxide film would need to be to… (More)
Wikipedia

Topic mentions per year

Topic mentions per year

1982-2017
0204019822017

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2017
2017
Using 3-D technology computer aided design simulation, we investigated the impact of equivalent oxide thickness (EOT) on… (More)
  • figure 1
  • figure 2
  • table I
  • figure 3
  • figure 4
Is this relevant?
2015
2015
Low-frequency noise measurements were performed on n-channel MOSFETs with a novel ultra-low 0.3-nm equivalent-oxide-thickness… (More)
  • figure 3
  • figure 1
  • figure 2
  • figure 4
  • table I
Is this relevant?
2012
2012
Surface-channel strained-Ge (s-Ge) p-MOSFETs with high-<i>K</i>/metal gate stack and ozone surface passivation are fabricated… (More)
  • figure 1
  • figure 3
  • figure 2
  • figure 4
Is this relevant?
2010
2010
N-type metal–oxide–semiconductor field-effect transistor (MOSFET) with an equivalent oxide thickness (EOT) of 0.37 nm has been… (More)
  • figure 1
  • figure 3
  • figure 2
  • figure 4
  • figure 5
Is this relevant?
2009
2009
The evolution of traditional metal-oxide-semiconductor field-effect transistors (MOSFETs) from planar single-gate devices into 3… (More)
  • figure 2
  • figure 1
  • table I
  • figure 3
  • figure 4
Is this relevant?
2009
2009
High-k/germanium (Ge) interfaces are significantly improved through a new interface engineering scheme of using both effective… (More)
  • figure 3
  • figure 1
  • figure 2
  • table I
  • figure 5
Is this relevant?
2009
2009
In order to implement more advanced nonvolatile memory device, many studies have been devoted to improve program/erase speed… (More)
  • figure 1
  • table I
  • figure 2
  • figure 3
Is this relevant?
2005
2005
A silicate reaction between lanthana and silica layers has been utilized to eliminate interfacial silica in metal-insulator… (More)
  • figure 2
  • figure 1
  • figure 3
  • figure 4
  • figure 5
Is this relevant?
2000
2000
Electrical and reliability properties of ultrathin La/sub 2/O/sub 3/ gate dielectric have been investigated. The measured… (More)
  • figure 1
  • figure 2
  • figure 4
  • figure 3
Is this relevant?
1999
1999
Zirconium oxide is investigated as a possible replacement for SiO/sub 2/ gate dielectric thinner than 1.5 nm. A maximum… (More)
Is this relevant?