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Equivalent oxide thickness

Known as: EOT 
An Equivalent oxide thickness is a distance, usually given in nanometers (nm), which indicates how thick a silicon oxide film would need to be to… 
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Doping (semiconductor)Semiconductor

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2014
Highly Cited
2014
Extreme Rainfall Variability in Australia: Patterns, Drivers, and Predictability*
AbstractLeading patterns of observed monthly extreme rainfall variability in Australia are examined using an empirical orthogonal… 
Review
2010
Review
2010
A Survey of Environment-, Operator-, and Task-adapted Controllers for Teleoperation Systems
Highly Cited
2008
Highly Cited
2008
A 32nm logic technology featuring 2nd-generation high-k + metal-gate transistors, enhanced channel strain and 0.171μm2 SRAM cell size in a 291Mb array
A 32 nm generation logic technology is described incorporating 2nd-generation high-k + metal-gate technology, 193 nm immersion… 
Highly Cited
2008
Highly Cited
2008
A cost effective 32nm high-K/ metal gate CMOS technology for low power applications with single-metal/gate-first process
For the first time, we have demonstrated a 32 nm high-k/metal gate (HK-MG) low power CMOS platform technology with low standby… 
Highly Cited
2007
Highly Cited
2007
Charge trapping characteristics of atomic-layer-deposited HfO2 films with Al2O3 as a blocking oxide for high-density non-volatile memory device applications
Charge trapping characteristics of high-relative permittivity (high-κ) HfO2 films with Al2O3 as a blocking oxide in p-Si/SiO2… 
Review
2006
Review
2006
Overview and status of metal S/D Schottky-barrier MOSFET technology
In this paper, the metal source/drain (S/D) Schottky-barrier (SB) MOSFET technology is reviewed. The technology offers several… 
Highly Cited
2006
Highly Cited
2006
How light emerges from an illuminated array of subwavelength holes
The extraordinary optical transmission through periodic arrays of subwavelength holes has been studied extensively since it was… 
Highly Cited
2006
Highly Cited
2006
Estimation of fixed charge densities in hafnium-silicate gate dielectrics
In this paper, an effective technique and methodology for the estimation of fixed charge components in high-k stacks was… 
Highly Cited
2000
Highly Cited
2000
Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 /spl Aring/
Electrical and reliability properties of ultrathin La/sub 2/O/sub 3/ gate dielectric have been investigated. The measured… 
Highly Cited
1996
Highly Cited
1996
Gate oxide scaling limits and projection
  • C. Hu
  • 1996
  • Corpus ID: 9460483
MOSFET gate oxide scaling limits are examined with respect to time-dependent breakdown, defects, plasma process damage, mobility… 
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