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Equivalent oxide thickness
Known as:
EOT
An Equivalent oxide thickness is a distance, usually given in nanometers (nm), which indicates how thick a silicon oxide film would need to be to…
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2 relations
Doping (semiconductor)
Semiconductor
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2018
2018
Design and Numerical Studies of Optical Alignment Rulers for Layer-by-Layer Integration
Aiham Adawi
,
H. Jiang
,
B. Kaminska
IEEE 18th International Conference on…
2018
Corpus ID: 59526681
Plasmonics structures have gained great attention by research since these structures could be engineered to manipulate light into…
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Review
2017
Review
2017
Long-Term Results of PET-Guided Radiation Therapy in Patients with Advanced-Stage Diffuse Large B-Cell Lymphoma Treated with R-CHOP in British Columbia
C. Freeman
,
K. Savage
,
+13 authors
L. Sehn
2017
Corpus ID: 196572321
Background: The role of radiation therapy (XRT) in patients (pts) with advanced stage diffuse large B-cell lymphoma (DLBCL…
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2016
2016
A Global Phase 3 Study of Delafloxacin (DLX) Compared to Vancomycin/Aztreonam (VAN/AZ) in Patients with Acute Bacterial Skin and Skin Structure Infections (ABSSSI)
L. Lawrence
2016
Corpus ID: 114074585
Delafloxacin is an anionic fluoroquinolone antibiotic with a number of unique properties that may make it useful in the treatment…
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2015
2015
Broadband Extraordinary Optical Transmission Through a Multilayer Structure With a Periodic Nanoslit Array
Yu Qu
,
Xiaojun Tian
,
Tong Fu
,
G. Wang
,
Guian Li
,
Zhongyue Zhang
IEEE Photonics Journal
2015
Corpus ID: 22355722
Extraordinary optical transmission (EOT) of metallic film perforated by a periodic array of subwavelength holes is significant in…
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2010
2010
Design and System Implications of a Family of Wideband HF Data Waveforms
W. Furman
,
E. Koski
,
J. Nieto
2010
Corpus ID: 20753678
Abstract : The current US MIL-STD-188-110B [1] is being revised and will include an appendix defining a family of wideband HF…
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2009
2009
A Scaling Trend of Variation-Tolerant SRAM Circuit Design in Deeper Nanometer Era
H. Yamauchi
2009
Corpus ID: 62149135
Evaluation results about area scaling capabilities of various SRAM margin-assist techniques for random VT variability issues are…
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2009
2009
InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology
U. Singisetti
,
M. Wistey
,
+8 authors
M. Rodwell
2009
Corpus ID: 55822060
InGaAs is a promising alternative channel material to Si for sub-22 nm node technology because of its low electron effective mass…
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2009
2009
In0.53Ga0.47As MOSFETs with 5 nm channel and self-aligned source/drain by MBE regrowth
U. Singisetti
2009
Corpus ID: 111804914
In0.53Ga0.47As MOSFETs with 5 nm channel and self-aligned source/drain by MBE regrowth Uttam Singisetti InGaAs has been…
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2005
2005
Effects of Aluminum and Nitrogen Profile Control on Electrical Properties of HfAlON Gate Dielectric MOSFETs
H. Ota
,
A. Ogawa
,
+6 authors
A. Toriumi
2005
Corpus ID: 16127550
1. Introduction HfAlON has been expected as a candidate of the gate insulators for low power and low stand-by power CMOS. An…
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2003
2003
Very low defects and high performance Ge-on-insulator p-MOSFETs with Al/sub 2/O/sub 3/ gate dielectrics
C. Huang
,
M.Y. Yang
,
+5 authors
D. Kwong
Symposium on VLSI Technology. Digest of Technical…
2003
Corpus ID: 39286361
We demonstrate for the first time high quality and dislocation free Ge-on-insulator (GOI) p-MOSFETs with Al/sub 2/O/sub 3/ gate…
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