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ELLIPTOCYTOSIS 2 (disorder)
Known as:
EL2
, ELLIPTOCYTOSIS 2
, Elliptocytosis, Rhesus-Unlinked Type
National Institutes of Health
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Related topics
Related topics
5 relations
Autosomal dominant inheritance
Genetic Heterogeneity
SPTA1, 3-BP INS, LEU154DUP
SPTA1, EX5DEL, SVA RETROTRANSPOSON INS
Broader (1)
Elliptocytosis, Hereditary
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2004
Highly Cited
2004
Elution of leachable components from composites after LED and halogen light irradiation.
A. Yap
,
Varian T S Han
,
M. S. Soh
,
K. Siow
Operative dentistry
2004
Corpus ID: 30203467
This study investigated the influence of curing lights and modes on the elution of leachable components from dental composites…
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Highly Cited
1993
Highly Cited
1993
New AsGa related center in GaAs.
D. Look
,
Z. Fang
,
J. Sizelove
,
C. E. Stutz
Physical Review Letters
1993
Corpus ID: 41266193
A new center related to As Ga has been found at relatively high concentrations (10 17 cm -3 ) in semi-insulating (2×10 7 Ωcm…
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1989
1989
Picosecond photorefractive response of GaAs:EL2, InP:Fe, and CdTe:V.
G. Valley
,
J. Dubard
,
A. Smirl
,
A. Glass
Optics Letters
1989
Corpus ID: 33772086
Measurements and theoretical calculations are presented for the photorefractive effect in three semi-insulating semiconductors…
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1989
1989
Unification of the properties of the EL2 defect in GaAs.
Hoinkis
,
Weber
,
+5 authors
Spaeth
Physical Review B (Condensed Matter)
1989
Corpus ID: 45027053
We provide experimental unification of the properties of EL2 in GaAs, linking the measurements of optical absorption, deep-level…
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Highly Cited
1987
Highly Cited
1987
Arsenic antisite defect AsGa and EL2 in GaAs.
B. Meyer
,
D. Hofmann
,
Niklas
,
J. Spaeth
Physical Review B (Condensed Matter)
1987
Corpus ID: 36869387
Highly Cited
1986
Highly Cited
1986
Identification of a defect in a semiconductor: EL2 in GaAs.
von Bardeleben HJ
,
Stiévenard
,
Deresmes
,
Huber
,
Bourgoin
Physical Review B (Condensed Matter)
1986
Corpus ID: 35702728
We present here a complete set of experimental results, obtained by electron paramagnetic resonance (EPR) and deep-level…
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Highly Cited
1985
Highly Cited
1985
Bistability and metastability of the gallium vacancy in GaAs: The actuator of EL2?
G. Baraff
,
M. Schlüter
Physical Review Letters
1985
Corpus ID: 34496935
We have used the Green's-function technique to carry out electronic-structure and total-energy calculations for the gallium…
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1984
1984
The relation of dominant deep levels in MOCVD AlxGa1-xAs with growth conditions
P. Bhattacharya
,
T. Matsumoto
,
S. Subramanian
1984
Corpus ID: 8275296
1983
1983
Characterization of electron traps in ion-implanted GaAs MESFET's on undoped and Cr-doped LEC semi-insulating substrates
S. Sriram
,
M. B. Das
IEEE Transactions on Electron Devices
1983
Corpus ID: 34286391
This paper presents the results of characterization of deep levels in ion-implanted layers on semi-insulating LEC GaAs substrates…
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Highly Cited
1982
Highly Cited
1982
Compensation mechanism in liquid encapsulated Czochralski GaAs: Importance of melt stoichiometry
D. Holmes
,
R.T. Chen
,
K. Elliott
,
C. Kirkpatrick
,
P. W. Yu
IEEE Transactions on Electron Devices
1982
Corpus ID: 29430052
It is shown that the key to reproducible growth of undoped semi-insulating GaAs by the liquid encapsulated Czochralski (LEC…
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