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ELLIPTOCYTOSIS 2 (disorder)

Known as: EL2, ELLIPTOCYTOSIS 2, Elliptocytosis, Rhesus-Unlinked Type 
National Institutes of Health

Related topics

Related topics

5 relations
Autosomal dominant inheritanceGenetic HeterogeneitySPTA1, 3-BP INS, LEU154DUPSPTA1, EX5DEL, SVA RETROTRANSPOSON INS

Broader (1)

Elliptocytosis, Hereditary

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2004
Highly Cited
2004
Elution of leachable components from composites after LED and halogen light irradiation.
This study investigated the influence of curing lights and modes on the elution of leachable components from dental composites… 
Highly Cited
1993
Highly Cited
1993
New AsGa related center in GaAs.
A new center related to As Ga has been found at relatively high concentrations (10 17 cm -3 ) in semi-insulating (2×10 7 Ωcm… 
1989
1989
Picosecond photorefractive response of GaAs:EL2, InP:Fe, and CdTe:V.
Measurements and theoretical calculations are presented for the photorefractive effect in three semi-insulating semiconductors… 
1989
1989
Unification of the properties of the EL2 defect in GaAs.
  • HoinkisWeber Spaeth
  • Physical Review B (Condensed Matter)
  • 1989
  • Corpus ID: 45027053
We provide experimental unification of the properties of EL2 in GaAs, linking the measurements of optical absorption, deep-level… 
Highly Cited
1987
Highly Cited
1987
Arsenic antisite defect AsGa and EL2 in GaAs.
Highly Cited
1986
Highly Cited
1986
Identification of a defect in a semiconductor: EL2 in GaAs.
We present here a complete set of experimental results, obtained by electron paramagnetic resonance (EPR) and deep-level… 
Highly Cited
1985
Highly Cited
1985
Bistability and metastability of the gallium vacancy in GaAs: The actuator of EL2?
We have used the Green's-function technique to carry out electronic-structure and total-energy calculations for the gallium… 
1984
1984
The relation of dominant deep levels in MOCVD AlxGa1-xAs with growth conditions
1983
1983
Characterization of electron traps in ion-implanted GaAs MESFET's on undoped and Cr-doped LEC semi-insulating substrates
This paper presents the results of characterization of deep levels in ion-implanted layers on semi-insulating LEC GaAs substrates… 
Highly Cited
1982
Highly Cited
1982
Compensation mechanism in liquid encapsulated Czochralski GaAs: Importance of melt stoichiometry
It is shown that the key to reproducible growth of undoped semi-insulating GaAs by the liquid encapsulated Czochralski (LEC… 
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