Skip to search formSkip to main contentSkip to account menu

Dram Mass Unit

Known as: [fdr_us], Avoirdupois Dram, 1 [oz_av]/16 
The non-SI unit of mass equal to 1/16 Avoirdupois ounce or 1/256 Avoirdupois pound. One dram equals approximately 1.7718451953125 grams.
National Institutes of Health

Related topics

Related topics

2 relations
Apothecaries Dram Mass UnitClinical Data Interchange Standards Consortium Terminology

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2017
2017
Mapping of CMOS FET degradation in bias space—Application to dram peripheral devices
Mapping and visualization of all degradation modes in both n- and p-channel field effect transistors, specifically devices for… 
2014
2014
Continued frequency scaling in 3D ICs through micro-fluidic cooling
Core scaling has largely replaced frequency scaling in general purpose microprocessors in the last decade. This is largely… 
2013
2013
4T DRAM based on Self-controllable Voltage Level technique for low leakage power in VLSI
In present trend of integration will continue in the projected future. When comparing the integration density of integrated… 
2009
2009
A Novel Approach to Analyze and Model Feature Size Effects in CMP
In order to characterize and model the pitch dependency of the step-height decay in a typical oxide CMP process, we measured… 
2000
2000
A 60-MHz 240-mW MPEG-4 videophone LSI with 16-Mb embedded DRAM
A 240-mW single-chip MPEG-4 videophone LSI with a 16-Mb embedded DRAM is fabricated utilizing a 0.25-/spl mu/m CMOS triple-well… 
1999
1999
Current state of 300-mm lithography in a pilot line environment
SEMICONDUCTOR300 (SC300) is the first pilot manufacturing facility for 300 mm wafers in the world. This company, a joint venture… 
1997
1997
Low-Power and High-Speed Advantages of DRAM-Logic Integration for Multimedia Systems (Special Issue on Low-Power and High-Speed LSI Technologies)
1995
1995
New recipe for a wee DRAM
1993
1993
250 Mbyte/sec synchronous DRAM using a 3-stage-pipelined architecture
A 3.3 V 512 k/spl times/18/spl times/2 bank synchronous DRAM has been developed using a novel 3-stage-pipelined architecture. The… 
1990
1990
1X deep-UV lithography with chemical amplification for 1-micron DRAM production
This paper describes methods used and results obtained in the production of 1-megabit (Mb) DRAM chips, using a chemically…