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Dram Mass Unit

Known as: [fdr_us], Avoirdupois Dram, 1 [oz_av]/16 
The non-SI unit of mass equal to 1/16 Avoirdupois ounce or 1/256 Avoirdupois pound. One dram equals approximately 1.7718451953125 grams.
National Institutes of Health

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Apothecaries Dram Mass UnitClinical Data Interchange Standards Consortium Terminology

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2014
2014
Sparkk : Quality-Scalable Approximate Storage in DRAM
DRAM memory stores its contents in leaky cells that require periodic refresh to prevent data loss. The refresh operation does not… 
Highly Cited
2013
Highly Cited
2013
Autophagy in the Human Placenta throughout Gestation
Background Autophagy has been reported to be essential for pre-implantation development and embryo survival. However, its role in… 
Highly Cited
2013
Highly Cited
2013
Progress in Z2-FET 1T-DRAM: Retention time, writing modes, selective array operation, and dual bit storage
Highly Cited
2005
Highly Cited
2005
A cost-efficient high-performance dynamic TCAM with pipelined hierarchical searching and shift redundancy architecture
This paper describes a 4.5-Mb dynamic ternary CAM (DTCAM) which is suitable for networking applications. A dynamic TCAM cell… 
Highly Cited
2005
Highly Cited
2005
Improving energy efficiency by making DRAM less randomly accessed
Existing techniques manage power for the main memory by passively monitoring the memory traffic, and based on which, predict when… 
Highly Cited
2003
Highly Cited
2003
A 210mW graphics LSI implementing full 3D pipeline with 264Mtexels/s texturing for mobile multimedia applications
A 121 mm/sup 2/ graphics LSI is for portable 2D/3D graphics and MPEG4 applications. The LSI contains a RISC processor with MAC, a… 
Highly Cited
2000
Highly Cited
2000
A 60 MHz 240 mW MPEG-4 video-phone LSI with 16 Mb embedded DRAM
A 240 mW single-chip MPEG-4 video-phone LSI with a 16 Mb embedded DRAM is fabricated in a 0.25 /spl mu/m CMOS, triple-well, quad… 
Highly Cited
1987
Highly Cited
1987
A meta-stable leakage phenomenon in DRAM charge storage —Variable hold time
A new leakage phenomenon called variable hold time (VHT) is reported which can compromise the data retention performance of… 
Highly Cited
1986
Highly Cited
1986
Investigation of MOS capacitors with thin ZrO2layers and various gate materials for advanced DRAM applications
Thin ZrO2layers were used to realize MOS capacitors with aluminum, polysilicon, and molybdenum gate electrodes. The layers, 300… 
Highly Cited
1984
Highly Cited
1984
An experimental 1Mb DRAM with on-chip voltage limiter
This paper will report on an experimental 21μm<sup>2</sup>cell, single 5V 1Mb NMOS DRAM. Typical clata are: access time 90ns… 
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