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Apothecaries Dram Mass Unit
Known as:
dram (drachm)
, Apothecaries Dram
, dr ap
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The non-SI unit of mass equal to 60 grains, 3 scruples, 1/8 troy ounce, or approximately 3.8879 grams.
National Institutes of Health
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Dram Mass Unit
Papers overview
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Review
2015
Review
2015
Technology Scaling Challenge and Future Prospects of DRAM and NAND Flash Memory
Sung-Kye Park
International Memory Workshop
2015
Corpus ID: 28521425
Memory manufactures are facing the challenges of technology scaling beyond 1xnm node DRAM and NAND flash memory. Even though we…
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Highly Cited
2013
Highly Cited
2013
Energy and performance exploration of accelerator coherency port using Xilinx ZYNQ
MohammadSadegh Sadri
,
C. Weis
,
N. Wehn
,
L. Benini
FPGAworld Conference
2013
Corpus ID: 207207653
Cooperation of CPU and hardware accelerator to accomplish computational intensive tasks, provides significant advantages in run…
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Highly Cited
2012
Highly Cited
2012
Hybrid memory cube new DRAM architecture increases density and performance
Joe M. Jeddeloh
,
B. Keeth
Symposium on VLSI Technology
2012
Corpus ID: 20338176
Multi-core processor performance is limited by memory system bandwidth. The Hybrid Memory Cube is a three-dimensional DRAM…
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Highly Cited
2010
Highly Cited
2010
Self-Adaptive Write Circuit for Low-Power and Variation-Tolerant Memristors
Kwan-Hee Jo
,
Chul-Moon Jung
,
K. Min
,
S. Kang
IEEE transactions on nanotechnology
2010
Corpus ID: 24361602
Memristive devices such as memristors that have been intensively studied for their possibilities as a strong candidate for future…
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Highly Cited
2010
Highly Cited
2010
Fine-Grained Activation for Power Reduction in DRAM
E. Cooper-Balis
,
B. Jacob
IEEE Micro
2010
Corpus ID: 15623879
This DRAM architecture optimization, which appears transparent to the memory controller, significantly reduces power consumption…
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Review
2009
Review
2009
Tetrahedron : Asymmetry Report Number 110 A silver-lined anniversary of Fleet iminosugars : 1984 – 2009 , from DIM to DRAM to LABNAc
B. G. Davis
2009
Corpus ID: 49219451
0957-4166/$ see front matter 2009 Published by doi:10.1016/j.tetasy.2009.03.013 * Tel.: +44 1865 275652; fax: +44 1865 285002. E…
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Highly Cited
2004
Highly Cited
2004
Scalability study on a capacitorless 1T-DRAM: from single-gate PD-SOI to double-gate FinDRAM
Tetsu Tanaka
,
E. Yoshida
,
T. Miyashita
IEDM Technical Digest. IEEE International…
2004
Corpus ID: 13266038
This paper describes both operation principle and scalability of a capacitor-less 1T-DRAM, and proposes a new concept about…
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Highly Cited
2001
Highly Cited
2001
Responses to the Crisis Constraints to a Rapid Trade Adjustment in East Asia´s Electronics Industry
Dieter Ernst
2001
Corpus ID: 263625018
It has been argued that “… trade adjustment in East Asia…will be rapid and sizable, lifting aggregate growth in these economies…
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Highly Cited
1997
Highly Cited
1997
The Energy Efficiency Of Iram Architectures
R. Fromm
,
S. Perissakis
,
+5 authors
K. Yelick
Conference Proceedings. The 24th Annual…
1997
Corpus ID: 8571201
Portable systems demand energy efficiency in order to maximize battery life. IRAM architectures, which combine DRAM and a…
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Highly Cited
1997
Highly Cited
1997
Parallel processing RAM chip with 256 Mb DRAM and quad processors
Kazuaki Murakami
,
Satoru Shirakawa
,
H. Miyajima
IEEE International Solids-State Circuits…
1997
Corpus ID: 36299902
Parallel processing RAM (PPRAM) is an architectural framework for merged memory/logic application-specific standard products…
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