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Diode–transistor logic
Known as:
DTL
, Complemented transistor diode logic
, CTDL
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Diode–transistor logic (DTL) is a class of digital circuits that is the direct ancestor of transistor–transistor logic. It is called so because the…
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Related topics
Related topics
15 relations
7400 series
Baker clamp
Digital electronics
Diode logic
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Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2016
2016
Virtual Flux Sensorless Control for Shunt Active Power Filters With Quasi-Resonant Compensators
Marcos B. Ketzer
,
C. Jacobina
IEEE transactions on power electronics
2016
Corpus ID: 6416662
This paper presents a sensorless control strategy for pulsewidth modulated active filters. The complete solution uses only two…
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2013
2013
GaN Power Transistor Modeling for High-Speed Converter Circuit Design
A. Nakajima
,
K. Takao
,
H. Ohashi
IEEE Transactions on Electron Devices
2013
Corpus ID: 34992310
A circuit simulator has been developed to design power losses of high-frequency power converters using GaN-based heterojunction…
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Highly Cited
2011
Highly Cited
2011
Performance Optimization of Antenna-Coupled ${\rm Al}/{\rm AlO}_{x}/{\rm Pt}$ Tunnel Diode Infrared Detectors
J. Bean
,
A. Weeks
,
G. Boreman
IEEE Journal of Quantum Electronics
2011
Corpus ID: 26798327
Signal-to-noise ratio (SNR) is a valuable figure of merit in determining the operating scope of infrared detectors. Antenna…
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2007
2007
Performance Enhancement of a Sub-Sampling Circuit for Ultra-Wideband Signal Processing
Cemin Zhang
,
A. Fathy
,
M. Mahfouz
IEEE Microwave and Wireless Components Letters
2007
Corpus ID: 38132593
An ultra-wideband (UWB) sampling mixer has been developed based on utilizing the combined advantages of two known circuit…
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Highly Cited
2005
Highly Cited
2005
Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure
K. Matsuo
,
N. Negoro
,
J. Kotani
,
T. Hashizume
,
H. Hasegawa
2005
Corpus ID: 55085771
Highly Cited
2004
Highly Cited
2004
N-type Schottky barrier source/drain MOSFET using ytterbium silicide
Shiyang Zhu
,
Jingde Chen
,
+7 authors
D. Kwong
IEEE Electron Device Letters
2004
Corpus ID: 40155006
Ytterbium silicide, for the first time, was used to form the Schottky barrier source/drain (S/D) of N-channel MOSFETs. The device…
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Review
2000
Review
2000
Intrinsic leakage in deep submicron CMOS ICs-measurement-based test solutions
A. Keshavarzi
,
K. Roy
,
C. Hawkins
IEEE Transactions on Very Large Scale Integration…
2000
Corpus ID: 5270902
The high leakage current in deep submicron, short-channel transistors can increase the stand-by power dissipation of future IC…
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Highly Cited
1997
Highly Cited
1997
Nanoelectronic architecture for Boolean logic
V. Roychowdhury
,
D. Janes
,
Supriyo Bandyopadhyay
Proceedings of the IEEE
1997
Corpus ID: 61180648
A nanoelectronic implementation of Boolean logic circuits is described where logic functionality is realized through charge…
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Highly Cited
1988
Highly Cited
1988
Millimeter-wave diode-grid frequency doubler
C. Jou
,
W. Lam
,
+4 authors
D. Rutledge
1988
Corpus ID: 18794822
Monolithic diode grid were fabricated on 2-cm/sup 2/ gallium-arsenide wafers in a proof-of-principle test of a quasi-optical…
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Highly Cited
1969
Highly Cited
1969
Circuits for High Efficiency Avalanche Diode Oscillators
W. Evans
1969
Corpus ID: 14076790
This paper describes and analyzes the circuits which have been used successfully for TRAPATT oscillator studies. The results lead…
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