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Capacitance?Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface
The potential modulation and interface states of Al2O3/Al0.25Ga0.75N/GaN structures prepared by atomic layer deposition (ALD) were characterized by capacitance–voltage (C–V) measurements. We observedExpand
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Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors
We have systematically investigated effects of plasma processing, formation of Si-based dielectrics, and formation of a thin Al2O3 film on the chemical and electronic properties of GaN and GaN/AlGaNExpand
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Drain Current Stability and Controllability of Threshold Voltage and Subthreshold Current in a Multi-Mesa-Channel AlGaN/GaN High Electron Mobility Transistor
The surrounding-field effect in a multi-mesa-channel (MMC) with an AlGaN/GaN structure, in which a periodic trench structure is fabricated directly under a gate electrode, was successfully observed.Expand
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Liquid-phase sensors using open-gate AlGaN∕GaN high electron mobility transistor structure
Liquid-phase sensing characteristics of open-gate AlGaN∕GaN high electron mobility transistor (HEMT) structures were investigated in aqueous solutions and polar liquids. In de-ionized water, theExpand
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Gate control, surface leakage currents, and peripheral charging in AlGaN/GaN heterostructure field effect transistors having nanometer-scale schottky gates
Gate control properties together with gate leakage currents in AlGaN/GaN heterostructure field effect transistors (HFETs) with nanometer-scale Schottky gates were investigated, focusing on theExpand
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Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors
In order to clarify the mechanisms of drain current collapse and gate leakage currents in the AlGaN/GaN heterostructure field effect transistor (HFET), detailed electrical properties of the ungatedExpand
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Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric
We investigated effects of electronic states at free surfaces of AlGaN/GaN heterostructure field-effect transistors (HFETs) on the inner current transport at the heterointerfaces. The analysis onExpand
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Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures
Chemical and electrical properties of the surfaces of GaN and GaN/AlGaN heterostructures were systematically investigated by x-ray photoelectron spectroscopy (XPS), capacitance–voltage, andExpand
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Leakage mechanism in GaN and AlGaN Schottky interfaces
Based on detailed temperature-dependent current–voltage (I–V–T) measurements the mechanism of leakage currents through GaN and AlGaN Schottky interfaces is discussed. The experiments were compared toExpand
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Mechanism of surface conduction in the vicinity of Schottky gates on AlGaN∕GaN heterostructures
Lateral surface leakage current (Is) on an AlGaN∕GaN heterostructure was systematically investigated by using a two-parallel gate structure with a gap distance (LGG) of 200nm–5μm. The surface currentExpand
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