Diffusion barrier

Known as: Barrier layer, Barrier metal, Diffusion-barrier 
A diffusion barrier is a thin layer (usually micrometres thick) of metal usually placed between two other metals. It is done to act as a barrier to… (More)
Wikipedia

Topic mentions per year

Topic mentions per year

1951-2018
05010019512017

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2011
2011
To evaluate the potential of Na-ion batteries, we contrast in this work the difference between Na-ion and Li-ion based… (More)
  • table 1
  • table 2
  • figure 1
  • figure 2
  • figure 3
Is this relevant?
2009
2009
We describe a method to form glass like thin film barrier in polydimethylsiloxane (PDMS) microcavities. The reactive fragments… (More)
  • figure 2
  • figure 1
  • figure 3
  • figure 4
  • figure 6
Is this relevant?
2008
2008
We discuss the characteristics of high-electron mobility transistors with barrier thicknesses between 33 and 3 nm, which are… (More)
  • figure 1
  • figure 2
  • figure 3
  • figure 4
Is this relevant?
2008
2008
Perpendicular L1<sub>0</sub>-FePt/MgO/Fe/L1<sub>0</sub> -FePt magnetic tunnel junction (MTJ) films with the (001) texture were… (More)
  • figure 1
  • figure 2
  • figure 3
  • figure 5
  • figure 6
Is this relevant?
2007
2007
Comparisons between isothermal depth to the top of the thermocline, and the mixed layer depth based on a ot criterion were… (More)
  • figure 1
  • figure 2
  • figure 2
  • figure 2
  • figure 3
Is this relevant?
2006
2006
The oxidation of the Ta diffusion barrier and its effect on the reliability of Cu interconnects were investigated by high… (More)
  • figure 3
  • figure 1
  • figure 4
  • figure 2
  • figure 6
Is this relevant?
2004
2004
The beneficial effect of double SiGe:C diffusion barriers for CMOS device downscaling is clearly demonstrated. The diffusion… (More)
  • figure I
  • figure 3
  • figure 6
  • figure 5
  • figure 9
Is this relevant?
2002
2002
Studied stress-induced voiding in Cu interconnects in the temperature range below 250/spl deg/C, and found two different voiding… (More)
  • figure 1
  • figure 2
  • figure 3
  • figure 6
  • figure 4
Is this relevant?
2001
2001
The technique of positron annihilation lifetime spectroscopy ~PALS! has been used to investigate the continuity and thermal… (More)
  • figure 1
  • figure 2
  • figure 3
  • figure 6
  • figure 4
Is this relevant?
2001
2001
In deep submicron VLSI circuits, interconnect reliability due to electromigration and thermal effects is fast becoming a serious… (More)
  • figure 1
  • figure 4
  • figure 3
  • figure 5
  • figure 7
Is this relevant?