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Diffusion barrier
Known as:
Barrier layer
, Barrier metal
, Diffusion-barrier
A diffusion barrier is a thin layer (usually micrometres thick) of metal usually placed between two other metals. It is done to act as a barrier to…
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Related topics
Related topics
8 relations
Indium(III) oxide
Integrated circuit
Karen Kavanagh
Semiconductor
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Broader (1)
Semiconductor device fabrication
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2010
Highly Cited
2010
Improved electrical transport in Al-doped zinc oxide by thermal treatment
F. Ruske
,
M. Roczen
,
+5 authors
B. Rech
2010
Corpus ID: 55273565
A postdeposition thermal treatment has been applied to sputtered Al-doped zinc oxide films and shown to strongly decrease the…
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Review
2008
Review
2008
Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives
G. Meneghesso
,
G. Verzellesi
,
+5 authors
E. Zanoni
IEEE transactions on device and materials…
2008
Corpus ID: 22079382
Failure modes and mechanisms of AlGaN/GaN high-electron-mobility transistors are reviewed. Data from three de-accelerated tests…
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Highly Cited
2007
Highly Cited
2007
Mechanism of minimum quantity lubrication in high-speed milling of hardened steel
Y. Liao
,
Hsiu-Hsia Lin
2007
Corpus ID: 55957037
Highly Cited
2003
Highly Cited
2003
Coupled dynamics over the Indian Ocean: spring initiation of the Zonal Mode
H. Annamalai
,
R. Murtugudde
,
J. Potemra
,
S. Xie
,
Ping Liu
,
Bin Wang
2003
Corpus ID: 37700401
Highly Cited
2001
Highly Cited
2001
Current instabilities in GaN-based devices
I. Daumiller
,
D. Théron
,
+10 authors
E. Kohn
IEEE Electron Device Letters
2001
Corpus ID: 7865266
Current dispersion effects have been experimentally investigated in a variety of AlGaN/GaN heterostructure FETs with large signal…
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Highly Cited
1999
Highly Cited
1999
Titanium dioxide (TiO2)-based gate insulators
S. Campbell
,
Hyeon-Seag Kim
,
D. Gilmer
,
B. He
,
Tiezhong Ma
,
W. Gladfelter
IBM Journal of Research and Development
1999
Corpus ID: 14608058
Titanium dioxide has been deposited on silicon for use as a high-permittivity gate insulator in an effort to produce low-leakage…
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Review
1998
Review
1998
Multilayer thermionic refrigeration
Gerald D. Mahan
Eighteenth International Conference on…
1998
Corpus ID: 31441566
A review is presented of our program to construct an efficient solid state refrigerator based on thermionic emission of electrons…
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Highly Cited
1997
Highly Cited
1997
Heterostructure integrated thermionic coolers
A. Shakouri
,
J. Bowers
1997
Corpus ID: 6527293
Thermionic emission in heterostructures is proposed for integrated cooling of high power electronic and optoelectronic devices…
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Highly Cited
1989
Highly Cited
1989
The formation of controlled-porosity membranes from anodically oxidized aluminium
R. Furneaux
,
William Roy Rigby
,
Alexander Philip Davidson
Nature
1989
Corpus ID: 4270446
Synthetic membranes are used in a number of diverse applications, such as filtration1,2, bioreactors2,3, tissue culture4…
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Highly Cited
1949
Highly Cited
1949
Physical principles involved in transistor action
J. Bardeen
,
W. Brattain
Bell Labs technical journal
1949
Corpus ID: 111226964
The transitor in the form described herein consists of two-point contact electrodes, called emitter and collector, placed in…
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