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Diffusion barrier
Known as:
Barrier layer
, Barrier metal
, Diffusion-barrier
A diffusion barrier is a thin layer (usually micrometres thick) of metal usually placed between two other metals. It is done to act as a barrier to…
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Related topics
Related topics
8 relations
Indium(III) oxide
Integrated circuit
Karen Kavanagh
Semiconductor
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Broader (1)
Semiconductor device fabrication
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2009
2009
Numerical study of optical properties of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers
Jun-Rong Chen
,
S. Ling
,
+6 authors
Shing-chung Wang
2009
Corpus ID: 73537731
The optical properties of InGaN multi-quantum-well laser diodes with different polarization-matched AlInGaN barrier layers have…
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2008
2008
Sb-Based n- and p-Channel Heterostructure FETs for High-Speed, Low-Power Applications
J. B. Boos
,
B. R. Bennett
,
+8 authors
B. V. Shanabrook
IEICE transactions on electronics
2008
Corpus ID: 36343590
Heterostructure field-effect transistors (HFETs) composed of antimonide-based compound semiconductor (ABCS) materials have…
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2004
2004
High performance single emitter homojunction interfacial work function far infrared detectors
D. G. Esaev
,
M. Rinzan
,
+5 authors
A. Belyanin
2004
Corpus ID: 38003063
Results are reported on p-GaAs homojunction interfacial work function internal photoemission far infrared (HIWIP FIR) detectors…
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2003
2003
Performance advantage of Schottky source/drain in ultrathin-body silicon-on-insulator and dual-gate CMOS
D. Connelly
,
C. Faulkner
,
D. Grupp
2003
Corpus ID: 54070473
Here, for the first time, advanced simulation models are used to investigate the performance advantage of Schottky source/drain…
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2003
2003
Electroless Cu deposition process on TiN for ULSI interconnect fabrication via Pd/Sn colloid activation
H. Fong
,
Y. Wu
,
Yung‐Yun Wang
,
C. Wan
2003
Corpus ID: 51912598
In this study, (100)-orientation silicon wafer coated with TiN barrier is catalyzed by a Pd/Sn colloid, which serves as an…
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Highly Cited
2000
Highly Cited
2000
Inhibiting growth of the Au0.5Ni0.5Sn4 intermetallic layer in Pb-Sn solder joints reflowed on Au/Ni metallization
A. Minor
,
J. Morris
2000
Corpus ID: 55310758
Au/Ni metallization has become increasingly common in microelectronic packaging when Cu pads are joined with Pb-Sn solder. Recent…
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Review
1999
Review
1999
GaN-Based FETs for Microwave Power Amplification
Yi-feng Wu
,
B. Keller
,
+4 authors
U. Mishra
1999
Corpus ID: 17548726
We review advances in GaN-based microwave power field-effect-transistors (FETs). Evolution in device technology included metal…
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1991
1991
In situ laser deposition of superconducting YBa 2 Cu 3 O 7-x thin films on GaAs substrates
S. Lee
,
Q. Jia
,
W. Anderson
,
D. T. Shaw
1991
Corpus ID: 64521584
Highly c‐axis oriented superconducting YBa2Cu3O7−x (YBCO) thin films with a zero‐resistance temperature of 85.5 K and a critical…
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1990
1990
A freeze-fracture electron microscopic study of Frankia in root nodules of Alnus incana grown at three oxygen tensions
R. Abeysekera
,
W. Newcomb
,
W. Silvester
,
J. Torrey
1990
Corpus ID: 10975079
Nodulated plants of Alnus incana ssp. rugosa and ssp. incana were grown with the roots exposed to 5, 21, and 40 kPa O2. The…
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1986
1986
OCTOPAMINE SENSITIVITY OF THE BLOOD-BRAIN BARRIER OF AN INSECT
P. Schofield
,
J. Treherne
1986
Corpus ID: 16429421
Octopaminergic sensitivity of the glia that form the blood-brain barrier of the cockroach was examined using microelectrode…
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