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Dark current (physics)

Known as: Dark current 
In physics and in electronic engineering, dark current is the relatively small electric current that flows through photosensitive devices such as a… 
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Related topics

Related topics

18 relations
Back-illuminated sensorBias frameCharge-coupled deviceDark-frame subtraction

Papers overview

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Highly Cited
2010
Highly Cited
2010
Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy
Analysis of steady-state and transient photoconductivity measurements at room temperature performed on c-axis oriented GaN… 
Highly Cited
2008
Highly Cited
2008
Direct transfer patterning on three dimensionally deformed surfaces at micrometer resolutions and its application to hemispherical focal plane detector arrays
2007
2007
High performance characteristics in pin MW HgCdTe e-APDs
In this communication we report high performance gain characteristics measured at T=77K in electron injected MW HgCdTe APDs. A… 
Highly Cited
2005
Highly Cited
2005
Physical modeling and design of thin-film SOI lateral PIN photodiodes
Lateral PIN diodes on thin-film silicon-on-insulator (SOI) substrates are photodetectors of prime interest for UV and fast IR… 
Highly Cited
2004
Highly Cited
2004
High-performance solar-blind photodetectors based on Al/sub x/Ga/sub 1-x/N heterostructures
Design, fabrication, and characterization of high-performance Al/sub x/Ga/sub 1-x/N-based photodetectors for solar-blind… 
Highly Cited
2001
Highly Cited
2001
Normal incidence InAs/AlxGa1−xAs quantum dot infrared photodetectors with undoped active region
We have performed a comprehensive investigation of n-type quantum dot infrared photodetectors (QDIPs) based on InAs/GaAs… 
Highly Cited
2001
Highly Cited
2001
Midinfrared absorption and photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots
We report on a comparison between the midinfrared absorption and the photocurrent response of n-doped InAs/GaAs self-assembled… 
Highly Cited
1993
Highly Cited
1993
Silicide/strained Si/sub 1-x/Ge/sub x/ Schottky-barrier infrared detectors
By employing a thin silicon sacrificial cap layer for silicide formation, the authors successfully demonstrated Pd/sub 2/Si… 
Highly Cited
1991
Highly Cited
1991
375‐GHz‐bandwidth photoconductive detector
We report the development of a new, integrable photoconductive detector, based on low‐temperature‐grown GaAs, that has a response… 
Highly Cited
1991
Highly Cited
1991
Long-wavelength Ge/sub x/Si/sub 1-x//Si heterojunction infrared detectors and 400*400-element imager arrays
Heterojunction Ge/sub x/Si/sub 1-x//Si internal photoemission infrared detectors exhibiting nearly ideal thermionic-emission dark… 
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