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Back-illuminated sensor

Known as: BSI-CMOS, BSI CMOS, Backside Illumination 
A back-illuminated sensor, also known as backside illumination (BSI or BI) sensor, is a type of digital image sensor that uses a novel arrangement of… 
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Related topics

Related topics

13 relations
Active matrixActive pixel sensorDark current (physics)Digital camera

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2017
2017
Steps Toward Automated Deprocessing of Integrated Circuits
Deprocessing of ICs historically employs a variety of mechanical and chemical process tools in combination with one or more… 
2016
2016
Polyacrylamide strengthened mixed-charge hydrogels and their applications in resistance to protein adsorption and algae attachment
Mixed-charge polymer hydrogels were successfully prepared by copolymerization of different ratios of [2-(meth-acryloyloxy) ethyl… 
2015
2015
Design and optimization of backside illuminated image sensor for epiretinal implants
Review
2012
Review
2012
Titania Nanostructures for Dye-sensitized Solar Cells
Titania is one kind of important materials, which has been extensively investigated because of its unique electronic and optical… 
2011
2011
A novel parallel configuration of dye-sensitized solar cells with double-sided anodic nanotube arrays
In dye-sensitized solar cells based on anodic titania nanotube arrays, the low photocurrent in the backside-illuminated… 
2011
2011
A 16 Mfps 165kpixel backside-illuminated CCD
In 2002, we reported a CCD image sensor with 260×312 pixels capable of capturing 103 consecutive images at 1,000,000 frames per… 
2011
2011
Backside illuminated hybrid FPA achieving low cross-talk combined with high QE
Backside-thinned fully-hybrid CMOS imagers (Figure 1) possessing excellent imaging properties have been previously reported † 1… 
2010
2010
Design and implementation of a torque-enhancement 2-axis magnetostatic SOI optical scanner
This study demonstrates the torque-enhancement design for a 2-axis magnetostatic SOI scanner driven by a double-side… 
2000
2000
Macropore Formation on Highly Doped n‐Type Silicon
Using specially “designed” electrolytes, it is possible to obtain macropores even in highly doped n-type silicon (0.020–0.060 Ωcm… 
1994
1994
A novel heterojunction bipolar transistor VCO using an active tunable inductance
This paper reports on the results of a novel HBT Voltage Controlled Oscillator (VCO) that incorporates a bias-tunable-active… 
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