Back-illuminated sensor

Known as: BSI CMOS, BSI-CMOS, Backside illumination 
A back-illuminated sensor, also known as backside illumination (BSI or BI) sensor, is a type of digital image sensor that uses a novel arrangement of… (More)
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Topic mentions per year

Topic mentions per year

1976-2018
051019762018

Papers overview

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2017
2017
Based on a 3.2-Megapixel 1.1- μm-pitch super-resolution (SR) CMOS image sensor in a 65-nm backside-illumination process, a… (More)
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2016
2016
We present the first 3D-stacked backside illuminated (BSI) single photon avalanche diode (SPAD) image sensor capable of both… (More)
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2015
2015
A triple exposure, high dynamic range (HDR), CMOS image sensor with an active array size of 1280 x 1080, and sub 1enoise floor is… (More)
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2011
2011
This paper presents a lens-integrated terahertz imaging detector implemented in a 65 nm bulk CMOS process technology. The back… (More)
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2011
2011
Backside Illumination (BSI) sensor with excellent optical performance has become the main-stream CMOS image sensor process. This… (More)
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2011
2011
We report on 2and 4 megapixel backside illuminated image sensors with a 5.5 μm global shutter pixel manufactured in 0.18 μm CMOS… (More)
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2010
2010
We have developed a high-current photodiode (PD) array module that consists of a beam splitter, which splits a light beam from a… (More)
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2009
2009
In this letter, we report on the fabrication of near-ultraviolet photodetectors based on gallium nitride (GaN) layers grown on a… (More)
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2004
2004
A systematic study of high-saturation-current p-i-n In/sub 0.53/Ga/sub 0.47/As photodiodes with a partially depleted absorber… (More)
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1985
1985
Backside illumination of Hg<inf>1-x</inf>Cd<inf>x</inf>Te photodiodes at low temperature increases the low frequency excess noise… (More)
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