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Cyclic P-Oxides

Known as: P-Oxides, Cyclic, Heterocyclic P-Oxides, Heterocyclic P Oxides 
National Institutes of Health

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11 relations
In BloodOxidesagonistsantagonists & inhibitors

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NIP 101PAK 104PPSI 352938ganciclovir cyclic phosphonate

Papers overview

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2018
2018
Manganese(iv) oxide amendments reduce methylmercury concentrations in sediment porewater.
Manganese(iv) oxide (pyrolusite, birnessite) mineral amendments can reduce dissolved MeHg concentrations in sediment… 
2015
2015
Silver-mediated direct phosphorylation of benzothiazoles and thiazoles with diarylphosphine oxides.
A silver nitrate-mediated, efficient phosphorylation of benzothiazoles and thiazoles with diarylphosphine oxides was developed… 
2015
2015
Space-charge Effect on Electroresistance in Metal-Ferroelectric-Metal capacitors
Resistive switching through electroresistance (ER) effect in metal-ferroelectric-metal (MFM) capacitors has attracted increasing… 
Highly Cited
2007
Highly Cited
2007
Numerical Simulation of Bottom Oxide Thickness Effect on Charge Retention in SONOS Flash Memory Cells
In this paper, bottom-oxide thickness (Tbo) and program/erase stress effects on charge retention in SONOS Flash memory cells with… 
2002
2002
Oxidative polycyclizations with rhenium(VII) oxides
Abstract The consecutive oxidative polycyclization reaction with rhenium(VII) oxides represents a highly stereoselective… 
Highly Cited
1993
Highly Cited
1993
Pressure dependence of the metal-insulator transition in the charge-transfer oxides RNiO3 (R=Pr,Nd,Nd0.7La0.3).
We have investigated the pressure dependence (up to 20 kbar) of the metal-insulator (MI) transition displayed by the orthorhombic… 
Highly Cited
1989
Highly Cited
1989
Improved hot-carrier immunity in submicrometer MOSFETs with reoxidized nitrided oxides prepared by rapid thermal processing
The fabrication of 0.8- mu m MOSFETs using 7.7-nm-thick nitrided oxides reoxidized by rapid thermal processing at 900-1150… 
1989
1989
Gate bias polarity dependence of charge trapping and time-dependent dielectric breakdown in nitrided and reoxidized nitrided oxides
The gate bias polarity dependence of charge trapping and time-dependent dielectric breakdown (TDDB) in nitrided and reoxidized… 
Highly Cited
1984
Highly Cited
1984
Super Recovery of Total Dose Damage in MOS Devices
Super recovery of the gate threshold voltage has been observed for several types of commercial NMOS integrated circuits. These… 
1977
1977
Energy conservation during nitrate respiration in Paracoccus denitrificans
P/2e ratios were calculated from anaerobic chemostat cultures of Paracoccus denitrificans with nitrogenous oxides as electron… 
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