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Channel-stopper

Known as: Channel stop, Channel stopper, Channel-stop 
In semiconductor device fabrication, channel-stopper or channel-stop is an area in semiconductor devices produced by implantation or diffusion of… 
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Related topics

Related topics

2 relations
Ion implantationSemiconductor device fabrication

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2016
2016
A novel shock protection method based on MEMS compliant latching stopper
This paper reports a novel shock protector on the basis of compliant latching system for the shock resistance enhancement of… 
2010
2010
Simulation of drop testing at extremely high accelerations
Advances in drop tower technology have extended the range of obtainable accelerations in drop testing from 5,000 Gs to as much as… 
2010
2010
Design and application of flexible stops for MEMS devices
As part of the reliability investigation, shock tests for first generation surface micro-machined devices have been performed… 
2004
2004
Closed-form expressions for the series impedance parameters of on-chip interconnects on multilayer silicon substrates
This paper presents accurate closed-form expressions for the frequency-dependent series impedance parameters of on-chip… 
1997
1997
A shallow trench isolation for sub-0.13 /spl mu/m CMOS technologies
The design of a shallow trench isolation (STI) for sub-0.13 /spl mu/m CMOS technologies is described in this paper. The areas… 
1989
1989
An improved method for determining relative 15N abundance in ammonium regeneration studies by direct diffusion
Ammonium in micromole quantities may be concentrated directly, with a 65% yield, from 250ml seawater into 10pl 0.25 N sulphuric… 
1987
1987
A new isolation method with boron-implanted sidewalls for controlling narrow-width effect
A new isolation method for high packing density MOS devices has been developed. In this method the LOCOS technique is applied to… 
1985
1985
Optimization of sidewall masked isolation process
This paper presents modifications of the Sidewall Masked Isolation (SWAMI) process for VLSI device isolation which improve… 
1982
1982
Direct moat isolation for VLSI
Device isolation is a major factor in determining the circuit packing density in VLSI. The scalability of device isolation by… 
1979
1979
Circuit optimization of the taper isolated dynamic gain RAM cell for VLSI memories
A one transistor only, ROM like dynamic RAM cell, whose operation depends on the modulation of the threshold of a buried channel… 
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