Channel-stopper

Known as: Channel stop, Channel stopper, Channel-stop 
In semiconductor device fabrication, channel-stopper or channel-stop is an area in semiconductor devices produced by implantation or diffusion of… (More)
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Topic mentions per year

Topic mentions per year

1975-2016
02419752016

Papers overview

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2009
2009
and digital circuits. The FFT-CCD image sensor consists of a The first image sensor with submicron pixel pitch is reported. CCD… (More)
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1998
1998
We investigated the Diffused shield Under the Oxide (DUO) for the first time. DUO is an extremely shallow diffusion layer in the… (More)
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1993
1993
The pwell implant and anneal for a 0.4μm CMOS process have been optimized for a self-aligned twin well without channel… (More)
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1991
1991
In this paper, described is a new simple isolation method utilized for realizing sub-half micron devices. Substantially, this… (More)
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1989
1989
A boron channel-stop compensation technique using a selective polysilicon etch prior to field oxidation is proposed for CMOS… (More)
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1987
1987
A new isolation method for high packing density MOS devices has been developed. In this method the LOCOS technique is applied to… (More)
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1987
1987
A simplified isolation process for test CMOS LSI chip fabrication is proposed. In the process, channel-stop implantation is self… (More)
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1987
1987
A method of improving the electrical field isolation for high density CMOS circuits is proposed using a novel dual germanium and… (More)
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1985
1985
This paper presents modifications of the Sidewall Masked Isolation (SWAMI) process for VLSI device isolation which improve… (More)
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1984
1984
The LOCOS technique is widely used for LSI isolations. However, if it is used for submicron VLSI, it has the following problems… (More)
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